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this is information on a product in full production. august 2013 docid023457 rev 4 1/14 STW78N65M5 automotive-grade n-channel 650 v, 0.024 typ., 69 a, mdmesh? v power mosfet in a to-247 package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? higher v dss rating ? higher dv/dt capability ? excellent switching performance ? easy to drive ? 100% avalanche tested applications ? switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. to-247 1 2 3 $0y ' * 6 order code v ds @t jmax. r ds(on) max. i d STW78N65M5 710 v 0.032 69 a table 1. device summary order code marking package packaging STW78N65M5 78n65m5 to-247 tube www.st.com
contents STW78N65M5 2/14 docid023457 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid023457 rev 4 3/14 STW78N65M5 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 69 a i d drain current (continuous) at t c = 100 c 41.5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 276 a p tot total dissipation at t c = 25 c 450 w dv/dt (2) 2. i sd 69 a, di/dt = 400 a/s, v ds peak < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 520 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.28 c/w r thj-amb thermal resistance junction-ambient max 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 15 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 2000 mj
electrical characteristics STW78N65M5 4/14 docid023457 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 34.5 a 0.024 0.032 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 9000 - pf c oss output capacitance - 210 - pf c rss reverse transfer capacitance -9-pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 768 - pf c o(er) (2) 2. c o(er) is a constant capacitanc e value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 205 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.5 - q g total gate charge v dd = 520 v, i d = 34.5 a, v gs = 10 v (see figure 16 ) -203-nc q gs gate-source charge - 50 - nc q gd gate-drain charge - 84 - nc
docid023457 rev 4 5/14 STW78N65M5 electrical characteristics 14 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(v) voltage delay time v dd = 400 v, i d = 40 a, r g = 4.7 , v gs = 10 v (see figure 17 ) (see figure 20 ) -163-ns t r(v) voltage rise time - 14 - ns t f(i) current fall time - 14 - ns t c(off) crossing time - 26 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 69 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 276 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 69 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 69 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 504 ns q rr reverse recovery charge - 13 c i rrm reverse recovery current - 49 a t rr reverse recovery time i sd = 69 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 635 ns q rr reverse recovery charge - 19 c i rrm reverse recovery current - 59 a
electrical characteristics STW78N65M5 6/14 docid023457 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15574v1 i d 50 0 0 10 v ds (v) 20 (a) 5 15 25 100 8v 6v 7v v gs =10v 150 200 250 am10393v1 i d 75 50 25 0 3 5 v gs (v) 7 (a) 4 6 100 125 150 175 v ds =30v 8 9 200 225 am10394v1 v gs 6 4 2 0 0 50 q g (nc) (v) 200 8 100 150 10 v dd =520v i d =34.5a 12 250 am15575v1 r ds(on) 0.026 0.024 0.022 0.020 0 20 i d (a) ( ) 10 30 v gs =10v 50 40 60 70 80 am10396v1
docid023457 rev 4 7/14 STW78N65M5 electrical characteristics 14 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v ds vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss 100000 1000 am15577v1 e oss 15 10 5 0 0 100 v ds (v) (j) 400 20 200 300 25 30 500 600 35 40 am10398v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a v ds =v gs am04972v1 r ds(on) 2.5 1 0 -55 -25 t j (c) (norm) 5 35 0.5 1.5 2 125 65 95 i d =34.5 a v ds =10 v am15573v1 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am04974v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1
electrical characteristics STW78N65M5 8/14 docid023457 rev 4 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode e 0 0 20 r g ( ) ( j) 10 30 500 1000 40 eon eoff 1500 2000 2500 i d =40a v dd =400v v gs =10v am15576v1
docid023457 rev 4 9/14 STW78N65M5 test circuits 14 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d $0y ,g 9jv 9gv 9gv ,g 9jv rq 7ghod\rii 7idoo 7ulvh 7f u r v v r y h u 9gv ,g 9jv,w rq rii 7idoo 7ulvh &rqfhswzdyhirupiru,qgxfwlyh/rdg7xuqrii
package mechanical data STW78N65M5 10/14 docid023457 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark.
docid023457 rev 4 11/14 STW78N65M5 package mechanical data 14 table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STW78N65M5 12/14 docid023457 rev 4 figure 21. to-247 drawing 0075325_g
docid023457 rev 4 13/14 STW78N65M5 revision history 14 5 revision history table 10. document revision history date revision changes 16-jul-2012 1 first release. 22-jan-2013 2 modified: r ds(on) on first page, i d , i dm on table 2 , note 2 on table 2 , typical values on table 6 , 7 , max and typical values on table 8 , figure 2 , 6 , 8 , 9 , 11 and 14 07-aug-2013 3 ? minor text changes ? modified: applications in first page ? added: mosfet dv/dt ruggedness parameter in table 2 ? added: table 4: avalanche characteristics ? modified: figure 15 , 16 , 17 and 18 08-aug-2013 4 ? minor text changes ? modified: figure 14
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