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inchange semiconductor product specification silicon pnp power transistors 2N5676 description ? with to-66 package ? high transition frequency applications ? for use as high-frequency drivers in audio amplifiers pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -125 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -2 a p d total power dissipation t c =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 2.5 ??/w fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2N5676 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.1a ;i b =0 -100 v v cesat collector-emitter saturation voltage i c =-1a; i b =-0.1a -0.5 v v besat base-emitter saturation voltage i c =-1a ;i b =-0.1a -1.2 v v be base-emitter on voltage i c =-1a ; v ce =-5v -1.2 v i ceo collector cut-off current v ce =-50v; i b =0 -0.5 ma i cbo collector cut-off current v cb =-125v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe-1 dc current gain i c =-0.1a ; v ce =-5v 50 h fe-2 dc current gain i c =-0.5a ; v ce =-5v 50 150 f t transition frequency i c =-100ma;v ce =10v 50 mhz
inchange semiconductor product specification 3 silicon pnp power transistors 2N5676 package outline fig.2 outline dimensions

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