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1. product profile 1.1 general description clf1g0035-100 and CLF1G0035S-100 are broadband general purpose 100 w amplifiers with first generation gan hemt te chnology from nxp. frequency of operation is from dc to 3.5 ghz. [1] pulsed rf; t p =50 ? s; ? =1 %. [1] 2-tone cw; ? f=1mhz. 1.2 features and benefits ? frequency of operation is from dc to 3.5 ghz ? 100 w general purpose broadband rf power gan hemt clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt rev. 2 ? 29 january 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 300 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 500 100 14.2 61.6 1000 100 11.2 47.9 1500 100 10.8 46.4 2000 100 11.7 53.3 1-tone pulsed [1] 500 100 15.5 67.4 1000 100 14 52.9 1500 100 14.3 53.7 2000 100 13.9 59.5 table 2. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 500 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 300 20 ? 45.5 1000 20 ? 39.3 1500 20 ? 44 2000 20 ? 46.4
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 2 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt ? excellent ruggedness (vswr 10 : 1) ? high voltage operation (50 v) ? thermally enhanced package 1.3 applications 2. pinning information [1] connected to flange. 3. ordering information ? commercial wireless infrastructure (cellular, wimax) ? industrial, scientific, medical ? radar ? jammers ? broadband general purpose amplifier ? emc testing ? public mobile radios ? defense application table 3. pinning pin description simplified outline graphic symbol clf1g0035-100 (sot467c) 1drain 2gate 3source [1] CLF1G0035S-100 (sot467b) 1drain 2gate 3source [1] 1 2 3 3 1 2 table 4. ordering information type number package name description version clf1g0035-100 - flanged ceramic package; 2 mounting holes; 2 leads sot467c CLF1G0035S-100 - earless ceramic package; 2 leads sot467b
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 3 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 4. limiting values 5. thermal characteristics [1] t j is measured via ir scan with case temperature of 85 ? c and power dissipation of 113 w. 6. characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 150 v v gs gate-source voltage ? 8+3 v i gf forward gate current external r g = 5 ? -36ma t stg storage temperature ? 65 +150 ?c t j junction temperature measured via ir scan - 250 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 200 ?c [1] 1.02 k/w table 7. dc characteristics t case = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = ? 7 v; i ds = 24 ma 150 - - v v gs(th) gate-source threshold voltage v ds = 0.1 v; i ds = 24 ma ? 2.4 ? 2 ? 1.3 v i dsx drain cut-off current v ds =10v; v gs =3 v - 17 - a g fs forward transconductance v ds = 10 v; v gs =0 v - 3.9 - s table 8. rf characteristics test signal: pulsed rf; t p =100 ? s; ? = 10 %; rf performance at v ds =50v; i dq = 330 ma; t case = 25 ? c; unless otherwise specified in a class-ab production circuit. symbol parameter conditions min typ max unit f frequency 3 - 3.5 ghz ? d drain efficiency p l = 100 w - 47 - % g p power gain p l = 100 w - 10 - db rl in input return loss p l = 100 w - ? 6- db p droop(pulse) pulse droop power p l = 100 w - 0.04 - db t r rise time p l = 100 w - 5 - ns t f fall time p l = 100 w - 5 - ns
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 4 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 7. application information 7.1 demo circuit fig 1. the broadband amplifier (200 mhz to 2100 mhz) demo circuit outline

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table 9. list of components see figure 1 and figure 2 . component description value remarks a1 gan bias module v2 - nxp c1 multilayer ceramic ch ip capacitor 3.3 pf atc 600f, passiveplus 0805n c3 multilayer ceramic ch ip capacitor 1.5 pf atc 600f, passiveplus 0805n c4 multilayer ceramic chip capacitor 100 pf atc 600f, passiveplus 0805n c5, c6 multilayer ceramic chip capacitor 1.8 pf atc 800b, passiveplus 1111n c7 multilayer ceramic chip capacitor 39 pf atc 800b, passiveplus 1111n c9 multilayer ceramic chip capacitor 10 nf atc 600f, passiveplus 0805n c10 multilayer ceramic chip capacitor 10 nf generic c11 multilayer ceramic chip capacitor 22 pf generic c12 multilayer ceramic ch ip capacitor 1 nf generic c13 multilayer ceramic chip capacitor 100 nf generic c20 multilayer ceramic chip capacitor 1 nf atc 700b c21 multilayer ceramic chip capacitor 100 pf atc 700b
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 5 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt c22, c26 multilayer ceramic chip capacitor 10 nf generic c23 multilayer cerami c chip capacitor 10 ? f tdk c5750x7s2a106m c25 multilayer cerami c chip capacitor 1 ? f generic c27 electrolytic capacitor 470 ? f panasonic eee-tk1j471am e1, e2 drain voltage connection - j1, p1, p2, p3, p4 1 row, 4-way vertical dc connector header - j2 rf in connector - j3 rf out connector - l2 inductor 14 nh 3 turns, 18 awg, inner diameter = 2.5 mm l3 ferrite bead - fair-rite 2743019447 q1 transistor - nxp clf1g0035-100 q2 transistor - nxp bc857b q3 transistor - nxp psmn8r2-80ys r1 resistor 20.0 ? generic r2 resistor 10.0 k ? generic r3 resistor 200 ? atc lr12010t0200j r4 resistor 0.005 ? susumu rl7520wt-r005-f r21, r22 resistor 0 ? generic t1 semi-rigid coax 18 mm micro-coax ut-062c-18 t2 semi-rigid coax 16 mm micro-coax ut-062c-18 z1, z2, z3, z4, z5, z6, z7, z8 microstrip lines - table 9. list of components ?continued see figure 1 and figure 2 . component description value remarks
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clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 7 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 7.2 application test results [1] pulsed rf; t p =50 ? s; ? =1 %. [1] 2-tone cw; ? f=1mhz. table 10. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 300 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 500 100 14.2 61.6 1000 100 11.2 47.9 1500 100 10.8 46.4 2000 100 11.7 53.3 1-tone pulsed [1] 500 100 15.5 67.4 1000 100 14 52.9 1500 100 14.3 53.7 2000 100 13.9 59.5 table 11. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 500 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 300 20 ? 45.5 1000 20 ? 39.3 1500 20 ? 44 2000 20 ? 46.4
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 8 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 7.3 graphical data the following figures are measured in a broadband amplifier demo board circuit from 200 mhz to 2100 mhz. 7.3.1 1-tone cw rf performance v ds = 50 v; i dq = 300 ma; p l =100w. v ds = 50 v; i dq = 300 ma. (1) f = 300 mhz (2) f = 1000 mhz (3) f = 2000 mhz fig 3. power gain and drain efficiency as function of frequency; typical values fig 4. power gain and drain efficiency as function output power; typical values

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clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 9 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 7.3.2 1-tone pulsed rf performance v ds = 50 v; i dq = 300 ma; p l =100w; t p =50 ? s, ? =1%. v ds = 50 v; i dq = 300 ma; t p =50 ? s, ? =1%. (1) f = 300 mhz (2) f = 1000 mhz (3) f = 2000 mhz fig 5. power gain and drain efficiency as function of frequency; typical values fig 6. power gain and drain efficiency as function output power; typical values

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clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 10 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 7.3.3 2-tone cw performance v ds = 50 v; i dq = 300 ma; ? f=1mhz. (1) f = 300 mhz (2) f = 1000 mhz (3) f = 2000 mhz v ds = 50 v; i dq = 500 ma; ? f=1mhz. (1) f = 300 mhz (2) f = 1000 mhz (3) f = 2000 mhz fig 7. third-order intermodulation distortion as a function of peak envelope power load power; typical values fig 8. third-order intermodulation distortion as a function of peak envelope power load power; typical values
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clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 11 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 7.4 bias module the bias module information for the gan hemt amplifier is described in application note ?an11130? 8. test information 8.1 ruggedness in class-ab operation the clf1g0035-100 and CLF1G0035S-100 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50v; p l = 100 w, f = 3000 mhz. 8.2 load pull impedance information the measured load pull impedances are shown below. impedance reference plane defined at device leads. measurements performed with nxp test fixtures. test temperature set at 25 ? c with a pulsed cw signal; t p =100 ? s; ? = 10 %; rf performance at v ds =50v; i dq = 330 ma. v ds = 50 v; i dq = 500 ma; p l(pep) =20w. (1) ? f=10 khz (2) ? f=30 khz (3) ? f = 100 khz (4) ? f = 300 khz (5) ? f=1 mhz (6) ? f=3 mhz fig 9. third-order intermodulation distortion as a function of frequency and tone spacing; typical values '
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clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 12 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt z s is the measured source pull impedance presented to the device. z l is the measured load pull impedance presented to the device. table 12. typical impedance typical values unless otherwise specified. f z s z l (maximum p l(m) ) z l (maximum ? d ) mhz ? ? ? 500 6 + 6.5j 5.8 + 1.9j 7.6 + 5j 1000 1.7 + 2j 6 + 0.7j 6.5 + 5.2j 2000 1.2 ? 2.8j 4.5 ? 0.5j 3.8 + 1.6j 2500 1 ? 4.2j 4 ? 1.2j 3 + 0j 3000 1.7 ? 5.2j 3.8 ? 2.5j 3.1 ? 1.3j 3500 2.7 ? 8.9j 4.2 ? 4.8j 3.3 ? 3.7j fig 10. definition of transistor impedance 59:;/ <=>98? ( % ( @:a?
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 13 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 8.3 packaged s-parameter data table 13. s-parameter small signal; v ds = 50 v; i dq = 330 ma; z s = z l = 50 ? f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 100 0.89132 ? 156.66 34.068 94.493 0.012475 7.7032 0.52196 ? 147.24 200 0.89073 ? 168.26 17.043 82.662 0.012315 ? 0.83012 0.53166 ? 156.66 300 0.89427 ? 172.3 11.153 74.641 0.011818 ? 5.3714 0.55825 ? 158.1 400 0.89924 ? 174.48 8.1416 67.823 0.011142 ? 8.4181 0.59137 ? 158.32 500 0.90493 ? 175.96 6.3028 61.71 0.010348 ? 10.333 0.62678 ? 158.56 600 0.91086 ? 177.14 5.0617 56.145 0.009484 ? 11.104 0.66181 ? 159.08 700 0.91671 ? 178.17 4.1699 51.054 0.008599 ? 10.584 0.69485 ? 159.87 800 0.92224 ? 179.13 3.5016 46.389 0.007737 ? 8.5461 0.72507 ? 160.86 900 0.92735 179.94 2.9855 42.108 0.006948 ? 4.7126 0.75217 ? 161.98 1000 0.93196 179.04 2.578 38.172 0.006285 1.1721 0.77617 ? 163.17 1100 0.93606 178.16 2.2506 34.546 0.005806 9.1609 0.79724 ? 164.39 1200 0.93966 177.28 1.9837 31.195 0.005568 18.833 0.81567 ? 165.61 1300 0.94281 176.4 1.7635 28.089 0.005606 29.182 0.83174 ? 166.82 1400 0.94552 175.53 1.5801 25.2 0.005918 38.964 0.84575 ? 168 1500 0.94785 174.66 1.4259 22.504 0.006469 47.302 0.85796 ? 169.15 1600 0.94982 173.78 1.2952 19.978 0.00721 53.919 0.86862 ? 170.26 1700 0.95148 172.9 1.1837 17.603 0.008097 58.951 0.87793 ? 171.34 1800 0.95285 172.02 1.088 15.361 0.009097 62.687 0.88608 ? 172.38 1900 0.95397 171.13 1.0053 13.239 0.010189 65.418 0.89322 ? 173.38 2000 0.95484 170.23 0.93366 11 .223 0.011359 67.384 0.89949 ? 174.36 2 100 0.9555 169.32 0.87121 9.2996 0.012601 68.77 0.905 ? 175.31 2200 0.95595 168.39 0.81661 7.4599 0.013912 69.711 0.90983 ? 176.23 2300 0.95622 167.44 0.76871 5.6942 0.015292 70.306 0.91408 ? 177.14 2400 0.9563 166.48 0.7266 3.9939 0.016745 70.629 0.91781 ? 178.02 2500 0.9562 165.49 0.68949 2.3514 0.018273 70.735 0.92108 ? 178.88 2600 0.95593 164.48 0.65676 0.7596 0.019885 70.661 0.92394 ? 179.72 2700 0.95549 163.44 0.62788 ? 0.788 0.021586 70.439 0.92643 179.44 2800 0.95487 162.36 0.60239 ? 2.2976 0.023385 70.091 0.92858 178.62 2900 0.95408 161.25 0.57994 ? 3.775 0.025294 69.632 0.93042 177.81 3000 0.9531 160.1 0.56021 ? 5.226 0.027321 69.075 0.93198 177 3100 0.95192 158.9 0.54294 ? 6.656 0.029482 68.427 0.93328 176.2 3200 0.95053 157.65 0.52791 ? 8.0708 0.03179 67.696 0.93433 175.4 3300 0.94892 156.35 0.51495 ? 9.4758 0.034261 66.885 0.93514 174.6 3400 0.94706 154.98 0.5039 ? 10.877 0.036915 65.995 0.93573 173.81 3500 0.94493 153.54 0.49464 ? 12.28 0.039772 65.028 0.93611 173.01 3600 0.9425 152.02 0.48708 ? 13.692 0.042855 63.98 0.93627 172.2 3700 0.93974 150.42 0.48113 ? 15.12 0.046193 62.851 0.93622 171.4
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 14 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 3800 0.93661 148.72 0.47676 ? 16.57 0.049816 61.637 0.93596 170.58 3900 0.93304 146.91 0.47391 ? 18.052 0.053758 60.331 0.93549 169.76 4000 0.92899 144.97 0.47258 ? 19.574 0.05806 58.928 0.9348 168.93 4100 0.92439 142.9 0.47276 ? 21.147 0.062766 57.42 0.93389 168.09 4200 0.91915 140.66 0.47446 ? 22.781 0.067929 55.796 0.93276 167.24 4300 0.91317 138.25 0.47772 ? 24.491 0.073607 54.046 0.93138 166.37 4400 0.90633 135.63 0.48257 ? 26.289 0.079867 52.157 0.92976 165.49 4500 0.89849 132.78 0.48907 ? 28.193 0.086783 50.112 0.9279 164.6 4600 0.88949 129.66 0.49729 ? 30.221 0.094441 47.895 0.92577 163.69 4700 0.87914 126.23 0.50729 ? 32.395 0.10293 45.484 0.92339 162.77 4800 0.8672 122.45 0.51914 ? 34.739 0.11237 42.857 0.92076 161.83 4900 0.85343 118.25 0.53291 ? 37.279 0.12284 39.988 0.91791 160.88 5000 0.83755 113.57 0.54862 ? 40.045 0.13448 36.847 0.91488 159.92 5100 0.81926 108.32 0.56627 ? 43.069 0.14738 33.402 0.91174 158.95 5200 0.79827 102.42 0.58578 ? 46.386 0.16163 29.62 0.9086 157.98 5300 0.77437 95.758 0.60694 ? 50.029 0.1773 25.468 0.90565 156.99 5400 0.74749 88.197 0.62942 ? 54.032 0.19438 20.912 0.90312 156 5500 0.7178 79.599 0.65267 ? 58.42 0.2128 15.928 0.90132 155 5600 0.68594 69.815 0.67591 ? 63.21 0.23234 10.5 0.90063 153.96 5700 0.65314 58.706 0.69815 ? 68.399 0.25267 4.6305 0.90147 152.86 5800 0.62143 46.181 0.71818 ? 73.964 0.2733 ? 1.6555 0.90421 151.66 5900 0.59357 32.261 0.73479 ? 79.853 0.29362 ? 8.3064 0.90909 150.31 6000 0.57266 17.159 0.7469 ? 85.99 0.31299 ? 15.244 0.9161 148.75 table 13. s-parameter ?continued small signal; v ds = 50 v; i dq = 330 ma; z s = z l = 50 ? f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree)
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 15 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 9. package outline fig 11. package outline sot467c references outline version european projection issue date iec jedec eiaj sot467c 99-12-28 12-05-02 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 dimensions (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 d d 1 u 1 1 3 2 a u 2 e e 1 p b h q f c unit q cd 9.27 9.02 d 1 5.92 5.77 e 5.97 5.72 e 1 fh p q mm 0.184 0.155 inch b 14.27 20.45 20.19 u 2 u 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2 a m m c c a w 1 w 2 ab m m m q b sot467c
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 16 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt fig 12. package outline sot467b references outline version european projection issue date iec jedec jeita sot467b sot467b_po 11-08-18 12-05-01 unit (1) mm max nom min 4.67 3.94 5.59 5.33 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 18.29 17.27 9.78 9.53 a dimensions note 1. millimeter dimensions are derived from the original inch dimensions. earless ceramic package; 2 leads sot467b bc 0.15 0.10 dd 1 ee 1 f 1.65 1.40 hq 2.21 1.96 u 1 u 2 5.97 5.72 w 2 0.25 inches max nom min 0.184 0.155 0.22 0.21 0.364 0.356 0.365 0.355 0.233 0.227 0.235 0.225 0.72 0.68 0.385 0.375 0.006 0.004 0.065 0.055 0.087 0.077 0.235 0.225 0.01 0 5 mm scale w 2 a b h 1 2 u 1 u 2 c q e e 1 d d a f d 1 3
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 17 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 10. handling information 10.1 esd sensitivity [1] classification 1b is granted to any part that passes after exposure to an esd pulse of 500 v, but fails after exposure to an esd pulse of 1000 v. 11. abbreviations 12. revision history table 14. esd sensitivity esd model class human body model (hbm); according jedec standard jesd22-a114f 1b [1] table 15. abbreviations acronym description awg american gauge wire cw continuous wave emc electromagnetic compatibility esd electrostatic discharge gan gallium nitride hemt high electron mobility transistor vswr voltage standing-wave ratio wimax worldwide interoperability for microwave access table 16. revision history document id release date data sheet status change notice supersedes clf1g0035-100_1g0035s-100 v.2 20130129 objective data sheet - clf1g0035-100_ 1g0035s-100 v.1 modifications: ? table 7 on page 3 : table has been updated. ? section 7 on page 4 : layout has been changed. ? table 9 on page 4 : row 1, remark has been changed. ? section 8 on page 11 : layout has been changed. ? section 8.1 on page 11 : section has been updated. clf1g0035-100_1g0035s-100 v.1 20120615 objective data sheet - -
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 18 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
clf1g0035-100_1g0035s-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. objective data sheet rev. 2 ? 29 january 2013 19 of 20 nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors clf1g0035-100; CLF1G0035S-100 broadband rf power gan hemt ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 29 january 2013 document identifier: clf1g0035-100_1g0035s-100 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 application test results . . . . . . . . . . . . . . . . . . . 7 7.3 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.3.1 1-tone cw rf performance. . . . . . . . . . . . . . . 8 7.3.2 1-tone pulsed rf performance . . . . . . . . . . . . 9 7.3.3 2-tone cw performance . . . . . . . . . . . . . . . . 10 7.4 bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 11 8.1 ruggedness in class-ab operation . . . . . . . . 11 8.2 load pull impedance information . . . . . . . . . . 11 8.3 packaged s-parameter data. . . . . . . . . . . . . . 13 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 10 handling information. . . . . . . . . . . . . . . . . . . . 17 10.1 esd sensitivity . . . . . . . . . . . . . . . . . . . . . . . . 17 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 14 contact information. . . . . . . . . . . . . . . . . . . . . 19 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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