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inchange semiconductor product specification silicon npn power transistors 2SC3181N description ? with to-3p(i) package ? complement to type 2sa1264n applications ? power amplifier applications ? recommend for 55w high fidelity audio frequency amplifier output stage pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i b base current 0.8 a p t total power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outlin e (to-3p(i)) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3181N characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ,i b =0 120 v v cesat collector-emitter saturation voltage i c =6a; i b =0.6a 2.0 v v be base-emitter voltage i c =4a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =120v; i e =0 5 | a i ebo emitter cut-off current v eb =5v; i c =0 5 | a h fe-1 dc current gain i c =1a ; v ce =5v 55 160 h fe-2 dc current gain i c =4a ; v ce =5v 35 f t transition frequency i c =1a ; v ce =5v 30 mhz c ob output capacitance i e =0 ; v cb =10v ;f=1mhz 190 pf ? h fe-1 classifications r o 55-110 80-160
inchange semiconductor product specification 3 silicon npn power transistors 2SC3181N package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC3181N

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