applications * microprocessor based equipment * notebooks, desktops, and servers * cell phone handsets and accessories * personal digital assistants(pdas) * portable instrumentation * pagers peripherals http://www.weitron.com.tw weitron wosd03/wosd05 wosd12 transient voltage suppressors 300 watts 3-12 volts surface mount tvs diodes array for esd protection * case: molded epoxy * terminas: ul 94v-0 * weight: 0.0045 gram * mounting position: any mechanical data * esd protection to iec 61000-4-2,30kv(air), 30kv(contact) * 300 watts peak power protection(tp=8/20 us) * excellent clamping capability * low leakage current * protects one i/o or power line * solid-state silicon-avalanche technology * small package for use in portable electronics * transient voltage suppressors encapsulated in a sod-323 package features sod-323 outline dimensio n s unit: m m sod-323 1 2 1/4 rev.c 22-jun-09 1 lead(pb)- f r ee p b
weitron http://ww w .weitron.com.tw maximum ratings(t a =25?c unless otherwise noted) characteristic symbol v otle unit p pk v esd 300 30 260(10s) w kv operating t emperatu r e range lead soldering t emperatu r e esd v oltage(hbm w aveform per iec 61000-4-2) peak pulse power(t p = 8/20s) t j t l -55 to +125 c t stg -55 to +150 c c wosd03/wosd05 wosd12 electrica l charac t eristics ( t = 25?c) wosd03 reverse stand-off voltage reverse breakdown voltage i t = 1ma v rwm = 3.3v t p = 8/20s v r = 0v,f = 1mhz i pp = 1a,t p = 8/20s i pp = 5a,t p = 8/20s v br v rwm - 5 - - - - 3d - - - - - - 4 - 20 7 - - 8.5 12 350 v v a v a pf i r v c i pp c j reverse leakage current clamping voltage peak pulse current junction capacitance device marking sym b o l t y p e num b e r m i n t y p m a x un i t wosd05 reverse stand-off voltage reverse breakdown voltage i t = 1ma v rwm = 5v t p = 8/20 s v r = 0v,f = 1mhz i pp = 5a,t p = 8/20 s i pp = 24a,t p = 8/20 s v br v rwm - 6 - - - - za - - - - - - 5 - 10 9.8 - - 14.5 24 350 v v a v a pf i r v c i pp c j reverse leakage current clamping voltage peak pulse current junction capacitance device marking symb o l t y p e num b e r m i n t y p m a x un i t 2/4 rev.c 22-jun-09 storage temperature range
weitron http://ww w .weitron.com.tw wosd03/wosd05 wosd12 electrica l charac t eristics ( t a =25?c unless otherwise noted) electrica l charac t eristics curv e s wosd12 reverse stand-off voltage reverse breakdown voltage i t = 1ma v rwm = 12v t p = 8/20 s v r = 1v,f = 1mhz i pp = 5a,t p = 8/20 s i pp = 15a,t p = 8/20 s v br v rwm - 13.3 - - - - 6u , zc - - - - - - 12 - 1 19 - - 25 15 90 v v a v a pf i r v c i pp c j reverse leakage current clamping voltage peak pulse current junction capacitance device marking symb o l t y p e num b e r m i n t y p m a x un i t fig.1 non-rep e t i t iv e p e a k p u ls e p ow e r vs. p u ls e time pulse duration - t p (s) ambient temperature - t a (?c) i f o r e w o p d e t a r f o % p p p - r e w o p e s l u p k a e p k p ) w k ( 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 0.01 0.1 1 10 0.1 1 10 100 1000 fig.2 p ow e r d e r a t ing c u rve 3/4 rev.c 22-jun-09
weitron http://ww w .weitron.com.tw wosd03/wosd05 wosd12 fig.4 clamping voltage vs. peak pulse current fig.3 pulse waveform 0 5 10 15 20 25 30 0 5 10 15 20 25 30 w a v e f o r m p a r a m e t e rs t r = 8 s t d = 2 0 s fig.6 forward voltage vs. forward current 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 t i m e ( s ) e - t t d = i p p / 2 w a v e f o r m p a r a m e t e rs t r = 8 s t d = 2 0 s 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 reverse voltage - v r (v) forward current - i f (a) peak pulse current - i pp (a) c - e c n a t i c a p a c j ) f p ( v - e g a t l o v d r a w r o f f ) v ( v - e g a t l o v g n i p m a l c c ) v ( i f o t n e c r e p p p f =1mhz wosd03/wosd05 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 0 5 10 15 20 25 30 35 40 45 w a v e f o r m p a r a m e t e r s : t r = 8 s t d = 1 0 s fig.5 cap a c itan c e vs. r e v e rs e v ol t a ge wosd12 wosd03/wosd05 wosd12 wosd03/wosd05 wosd12 4/4 rev.c 22-jun-09
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