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| 2014. 3. 31 1/2 semiconductor technical data kdr730e schottky barrier type diode revision no : 1 low current rectification and high speed switching. features h low reverse current : i r =0.1 a(typ.) h high reliability. h small package : esc. maximum rating (ta=25 ? ) * : mounted on a glass epoxy circuit board of 20 ? 20mm, pad dimension of 4 ? 4mm. electrical characteristics (ta=25 ? ) characteristic symbol rating unit reverse voltage v r 30 v average forward current i o 200 ma surge current (10ms) i fsm 1 a power dissipation p d 150 * mw junction temperature t j 125 ? storage temperature range t stg -40 q 125 ? characteristic symbol test condition min. typ. max. unit forward voltage v f i f =200ma - - 0.60 v reverse current i r v r =10v - - 1.0 a
2014. 3. 31 2/2 kdr730e revision no : 1 |
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