advanced power n-channel mosfet with schottky electronics corp. diode low on-resistance bv dss 20v fast switching characteristic r ds(on) 600m included schottky diode i d 1a description absolute maximum ratings symbol units v ds v v ka v v gs v i d @t a =25 a i d @t a =70 a i dm a i f a i fm a p d @t a =25 w total power dissipation (schottky) w t stg storage temperature range t j operating junction temperature range symbol value units rthj-a maximum thermal resistance, junction-ambient 3 (mosfet) 110 /w maximum thermal resistance, junction-ambient 3 (schottky) 110 /w data and specifications subject to change without notice 201204253 pulsed drain current 1 (mosfet) 8 2 total power dissipation (mosfet) 0.9 average forward current (schottky) 0.5 pulsed forward current 1 (schottky) continuous drain current 3 (mosfet) 1 continuous drain current 3 (mosfet) 0.8 -55 to 125 -55 to 125 parameter rating drain-source voltage (mosfet) 20 reverse voltage (schottky) 20 gate-source voltage (mosfet) + 6 ap6924gey 0.9 rohs-compliant product thermal data parameter 1 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. k a g d s d s g a a k sot-26
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance v gs =4.5v, i d =1a - - 600 m v gs =2.5v, i d =0.3a - - 2 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =5v, i d =600ma - 1 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v ,v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 6v, v ds =0v - - + 10 ua q g total gate charge 2 i d =600ma - 1.3 2 nc q gs gate-source charge v ds =16v - 0.3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 0.5 - nc t d(on) turn-on delay time 2 v ds =10v - 21 - ns t r rise time i d =600ma - 53 - ns t d(off) turn-off delay time r g =3.3 ,v gs =5v - 100 - ns t f fall time r d =16.7 - 125 - ns c iss input capacitance v gs =0v - 38 60 pf c oss output capacitance v ds =10v - 17 - pf c rss reverse transfer capacitance f=1.0mhz - 12 - pf source-drain diode symbol parameter test conditions min. typ. max. unit v sd forward on voltage 2 i s =750ma, v gs =0v - - 1.2 v schottky characteristics@t j =25 symbol parameter test conditions min. typ. max. units v f forward voltage drop i f =500ma - - 0.5 v i rm maximum reverse leakage current vr=20v - - 100 ua c t junction capacitance v r =10v - 21 - pf notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board, t< 5sec ; 180 /w when mounted on min. copper pad. ap6924gey 2
ap6924ge y mosfet fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 250 450 650 850 1050 1250 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d = 0.5a t a =25 o c 0.0 0.5 1.0 1.5 2.0 2.5 0 0.5 1 1.5 2 2.5 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 5.0v 4.5v 3.5v 2.5v v g =2.0v 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 v ds , drain-to-source voltage (v) i d , drain current (a) t a =125 o c 5.0v 4.5v 3.5v 2.5v v g =2.0v 0.4 0.7 1.0 1.3 1.6 1.9 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =1a v g =4.5v 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0.0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =125 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance schottky diode fig 1. reverse leakage current fig 2. forward voltage drop v.s. junction temperature 4 ap6924gey 0.01 0.1 1 10 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + ta r thja =180 o c/w t t 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.02 0 1 2 3 4 5 6 0 0.4 0.8 1.2 1.6 2 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =10v v ds =12v v ds =16v i d =0.6a 10 100 1357911 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.1 1 0 0.2 0.4 0.6 0.8 v f , forward voltage drop (v) i f , forward current (a) t j =125 o ct j =25 o c 0.001 0.01 0.1 1 10 25 50 75 100 125 t j , junction temperature ( o c) i r , reverse current (ma) 20v 16v
|
