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www.irf.com 1 features ? integrated gate drivers and bootstrap diodes. ? temperature monitor ? temperature and overcurrent shutdown ? fully isolated package. ? low vce (on) non punch through igbt technology. ? undervoltage lockout for all channels ? matched propagation delay for all channels ? low side igbt emitter pins for current control ? schmitt-triggered input logic ? cross-conduction prevention logic ? lower di/dt gate driver for better noise immunity ? motor power range 0.75~2kw / 85~253 vac ? isolation 2000v rms min absolute maximum ratings IRAMX16UP60A series 16a, 600v plug n drive tm integrated power module for appliance motor drive description international rectifier's IRAMX16UP60A is an integrated power module developed and optimized for electronic motor control in appliance applications such as washing machines and variable speed compressor drives for in- room air-conditioning systems and commercial refrigerators. plug n drive technology offers an extremely com- pact, high performance ac motor-driver in a single isolated package for a very simple design. an open emitter configuration of the low side igbt switches offer easy current feedback and overcurrent monitor for high precision and reliable control. a built-in temperature monitor and over-current protection, along with the short-circuit rated igbts and inte- grated under-voltage lockout function, deliver high level of protection and fail-safe operation. the integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages. pd-94684a parameter description max. value units v ces ma x imu m i gbt blo c kin g vo lt a g e 6 0 0 v i o @ t c =25c rms phase current 16 i o @ t c =100c rms phase current 8 i pk maximum peak phase current (tp<100ms) 30 f p ma x imu m p w m c a r r ie r f r e q u e n c y 2 0 khz p d ma x imu m p o we r d is s ip a t io n p e r p h a s e 3 5 w v iso isolation voltage (1min) 2000 v rms t j (igbt & diodes) operating junction temperature range -40 to +150 t j (driver ic) operating junction temperature range -40 to +150 t mounting torque range (m3 screw) 0.8 to 1.0 nm a c
IRAMX16UP60A 2 www.irf.com internal electrical schematic - IRAMX16UP60A 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 vru (12) vrw (14) vrv (13) vb1 (7) u, vs1 (8) vb2 (4) v, vs2 (5) vb3 (1) w, vs3 (2) thermistor r 3 vdd (22) vss (23) r 1 r 2 c rg1 rg3 rg5 driver ic r t lo1 16 lo3 14 lo2 15 rg2 rg4 rg6 t/i trip (21) hin1 (15) hin2 (16) hin3 (17) lin1 (18) lin2 (19) lin3 (20) v (10) +
IRAMX16UP60A www.irf.com 3 inverter section electrical characteristics @ t j = 25c inverter section switching characteristics @ t j = 25c thermal resistance symbol parameter min typ max units conditions r th( j- c) junction to case thermal resistance, each igbt under inverter operation. --- --- 4.0 c/w r th( j- c) junction to case thermal resistance, each diode under inverter operation. --- 5 5.5 c/w r th( c- s) thermal resistance case to sink --- 0.1 --- c/w flat, g reased surface. heatsink compound thermal conductivity - 1w/mk symbol parameter min typ max units e on turn-on switching loss --- 315 435 e off turn-off switching loss --- 150 180 e to t total switching loss --- 465 615 t j =25c e on turn-on swtiching loss --- 500 700 t j =150c e off turn-off switching loss --- 255 310 e to t total switching loss --- 755 1010 erec diode reverse recovery energy --- 45 95 j t rr diode reverse recovery time --- 105 145 ns rbsoa reverse bias safe operating area scsoa short circuit safe operating area 10 --- --- s t j =150c, v p =600v, v + =360v, v dd =+15v to 0v see ct2 j j t j =150c, v + =400v v dd =15v, i f =8a, l=2mh full square t j =150c, i c =8a, v p =600v v + =480v, v dd =+15v to 0v see ct3 conditions i c =8a, v + =400v v dd =15v, l=2mh see ct1 energy losses include "tail" and diode reverse recovery symbol parameter min typ max units conditions v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v in =5v, i c =20 a ? v (br)ces / ? t temperature coeff. of breakdown voltage --- 0.3 --- v/c v in =5v, i c =1.0 m a (25c - 150c) --- 1.60 1.90 i c =8a t j =25c, v dd =15v --- 1.75 2.00 i c =8a t j =150c --- 5 30 v in =5v, v + =600v --- 50 80 v in =5v, v + =600v, t j =150c --- 2.0 3.25 i c =8a --- 1.5 2.0 i c =8a, t j =150c v a v v ce(on) i ces v fm collector-to-emitter saturation voltage zero gate voltage collector current diode forward voltage drop
IRAMX16UP60A 4 www.irf.com recommended operating conditions driver function the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recom- mended conditions. all voltage parameters are absolute referenced to v ss . the v s offset rating is tested with all supplies biased at 15v differential. (note 1) static electrical characteristics driver function v bias (v cc , v bs 1,2,3) = 15v unless otherwise specified. the v in and i in parameters are referenced to v ss and are applicable to all six channels. (note 1) absolute maximum ratings driver function absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage parameters are absolute voltages referenced to v ss . (note 1) symbol definition min typ max units v in,th+ positive going input threshold --- --- 3.0 v v in,th- negative going input threshold 0.8 --- --- v i qbs quiescent v bs supply current --- 70 120 a i qcc quiscent v cc supply current --- 1.6 2.3 a i lk offset supply leakage current --- --- 50 a i in+ input bias current (out=hi or out=lo) --- 120 --- a v(t/i trip )t/i trip threshold voltage (out=hi or out=lo) (note 3) 3.85 4.3 4.75 v 11.4 --- v v v 10.9 0.2 10.4 --- v ccuv+ v bsuv+ v ccuv- v bsuv- v cc and v bs supply undervoltage negative going threshold v ccuvh v bsuvh v cc and v bs supply undervoltage i lockout hysteresis 10.6 11.1 11.6 v cc and v bs supply undervoltage positive going threshold symbol definition min max units v + high side offset voltage -0.3 600 v v b1,2,3 high side floating supply voltage -0.3 20 v v dd low side and logic fixed supply voltage -0.3 20 v v in input voltage lin, hin, t/i trip -0.3 7 v t j juction temperature -40 150 c symbol definition min max units v b1,2,3 high side floating supply voltage v s +12 v s +20 v s1,2,3 high side floating supply offset voltage note 2 450 v dd low side and logic fixed supply voltage 12 20 v itrip t/i trip input v oltage v ss v ss +5 v in logic input voltage lin, hin v ss v ss +5 v v v
IRAMX16UP60A www.irf.com 5 note 3: the maximum recommended sense voltage at the t/i trip terminal under normal operating condi- tions is 3.3v. dynamic electrical characteristics v dd = v bs = v bias = 15v, i o = 1a, v d =9v , pwm in = 2khz, v in on = v in ,th+, v in off = v in ,th- t a = 25c unless otherwise specified. thermistor built-in IRAMX16UP60A internal ntc - thermistor characteristics note 1: for more details, see ir21365 data sheet note 2: logic operational for v s from com-5v to com+600v. logic stata held for v s from com-5v to com- v bs . (please refer to dt97-3 for more details) ir21365 12k ntc v cc (22) t/i trip (21) v ss (23) 6.8k typ units conditions r 25 resistance 100 +/- 5% k ? t c = 25c r 125 resistance 2.522 + 17.3 % /- 14.9% k ? t c = 125c b b-constant (25-50c) 4250 +/- 3% k r 2 = r 1 e [b(1/t2 - 1/t1)] -40 / 125 c 1mw/ct c = 25c parameter temperature range typ. dissipation constant symbol definition min typ max units t on input to output propagation turn-on delay time (see fig.11) - 470 - ns t off input to output propagation turn-off delay time (see fig. 11) - 615 - ns d t dead time - 300 - ns i/t trip t/i trip to six switch to turn-of f propagation delay (see f ig. 2) - 750 - ns t fcltrl post i trip to six switch to turn-off clear time (see fig. 2) - 9 - ms
IRAMX16UP60A 6 www.irf.com figure1. input/output timing diagram note 4: the shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. itrip u,v,w 001vbus 0100 011x 1xxx hin1,2,3 lin1,2,3 ho lo u,v,w ic driver vbus hin1,2,3 lin1,2,3 (15,16,17) (18,19,20) (8,5,2) ho1,2,3 lo1,2,3 itrip u,v,w lin1,2,3 hin1,2,3
IRAMX16UP60A www.irf.com 7 note 5: the shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. figure 2. t/i trip timing waveform t/itrip lin1,2,3 hin1,2,3 tfltclr 50% 50% u,v,w
IRAMX16UP60A 8 www.irf.com module pin-out description pin name description 1 vb3 high side floating supply voltage 3 2 w,vs3 output 3 - high side floating supply offset voltage 3nanone 4 vb2 high side floating supply voltage 2 5 v,vs2 output 2 - high side floating supply offset voltage 6nanone 7 vb1 high side floating supply voltage 1 8 u,vs1 output 1 - high side floating supply offset voltage 9nanone 10 v+ positive bus input voltage 11 na none 12 le1 low side emitter connection - phase 1 13 le2 low side emitter connection - phase 2 14 le3 low side emitter connection - phase 3 15 hin1 logic input high side gate driver - phase 1 16 hin2 logic input high side gate driver - phase 2 17 hin3 logic input high side gate driver - phase 3 18 lin1 logic input low side gate driver - phase 1 19 lin2 logic input low side gate driver - phase 2 20 lin3 logic input low side gate driver - phase 3 21 t/itrip temperature monitor and shut-down pin 22 vcc +15v main supply 23 vss negative main supply
IRAMX16UP60A www.irf.com 9 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide good decoupling between vcc-gnd and vb-vs terminals, the capacitors shown con- nected between these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1mf, are strongly recommended. 3. low inductance shunt resistors should be used for phase leg current sensing. similarly, the length of the traces between pins 12, 13 and 14 to the corresponding shunt resistors should be kept as small as possible. 4. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dn 98-2a, application note an-1044, or figure 10. 5. over-current sense signal can be obtained from external hardware detecting excessive instantaneous cur- rent in inverter. typical application connection IRAMX16UP60A v dd (15 v) t/i trip v ss 3.3 v ntc 12k 5k 1m controller 3-ph ac motor l in w h in w l in u l in v lew h in u h in v leu lev v+ vsu v b u vsv v b v vsw v b w driver ic dc bus capacitors phase leg current sense temp sense boot-strap capacitors o/c sense (active low) 10m 6.8k 10.2k u v w current sensing can use a single sense resistor or phase leg sensing as shown 0.1 m
IRAMX16UP60A 10 www.irf.com figure 3. maximum sinusoidal phase current as function of switching frequency v bus =400v , t j =150c, modulation depth=0.8, pf=0.6 figure 4. maximum sinusoidal phase current as function of modulation frequency v bus =400v, t j =150c, t c =100c, modulation depth=0.8, pf=0.6 0 1 2 3 4 5 6 7 8 9 10 1 10 100 motor current modulation frequency (hz) maximum rms phase current (a) . 12khz 16khz 20khz switching frequency: 0 2 4 6 8 10 12 14 0 5 10 15 20 pwm switching frequency (khz) maximum rms output current/phase (a) . tc=100c tc=110c tc=120c
IRAMX16UP60A www.irf.com 11 figure 5. igbt turn-on. typical turn-on waveform @t j =150c, v bus =400v figure 6. igbt turn-off. typical turn-off waveform @t j =150c, v bus =400v -1 0 1 2 3 4 5 6 7 8 9 0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 time ( s) current (a) -50 0 50 100 150 200 250 300 350 400 450 voltage (v) current voltage -2 0 2 4 6 8 10 12 14 16 18 0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 time ( s) current (a) -50 0 50 100 150 200 250 300 350 400 450 voltage (v) current voltage
IRAMX16UP60A 12 www.irf.com figure 7. variation of thermistor resistance with temperature figure 8. variation of temperature sense voltage with thermistor temperature using exter- nal bias resistance of 6.8k ?, v cc =15v 1 10 100 1000 0 20 40 60 80 100 120 140 temperature (c) thermistor resistance (k _ ? ) minimum nominal maximum 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 thermistor temperature (c) v sense (v) maximum nominal minimum
IRAMX16UP60A www.irf.com 13 figure 10. recommended minimum bootstrap capacitor value vs switching frequency figure 9. estimated maximum igbt junction temperature with thermistor temperature 4.7 6.8 15 0 2.5 5 7.5 10 12.5 15 17.5 20 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 16.5 18 19.5 switching frequency (khz) capacitance ( f) 5101520 10 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 thermistor temperature (c) igbt junction temperature (c) .
IRAMX16UP60A 14 www.irf.com figure 11. switching parameter definitions figure 11a. input to output propagation turn-on delay time figure 11b. input to output propaga- tion turn-off delay timet figure 11c. diode reverse recovery v ce i f h in /l in t rr i rr v ce i c h in /l in t on t r 50% h in /l in 90% i c 10% i c 50% h in /l in v ce i c h in /l in t off t f 90% i c 10% i c 10% v ce
IRAMX16UP60A www.irf.com 15 figure ct1. switching loss circuit figure ct2. s.c.soa circuit ho lo u,v,w ic driver vbus lin1,2,3 5v hin1,2,3 in io pwm=4 s ho lo u,v,w ic driver vbus lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o figure ct3. r.b.soa circuit in io ho lo u,v,w ic driver vbus lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o
IRAMX16UP60A 16 www.irf.com package outline notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking standard pin leadforming option for mounting instruction see an-1049 56 62 2 5 . 8 1 1 . 4 ? 3 . 4 t y p . 2 5 . 3 2 typ. 22 pitches = 44 0.80 0.55 typ. 123 46.2 50 5 . 5 2 t y p . a c ab ?0.20 3 035-z2l03 note 1 9 0.70 0.45 typ. i n t . 1 1 . 4 r e f convex only 5.0 3.2 2 . 5 0.10 c r0.6 typ. i n t . 4 . 7 9 . 0 r e f . b min. IRAMX16UP60A m note 3 note 2
IRAMX16UP60A www.irf.com 17 data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 08/03 package outline notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking pin leadforming option -2 56 62 2 5 . 8 1 1 . 4 ? 3 . 4 t y p . 2 5 . 3 2 typ. 22 pitches = 44 0.80 0.55 typ. 123 46.2 50 5 . 5 2 t y p . a c b ab ?0.20 3 035-z2l03 5 1 3 . 9 1 1 . 4 r e f . 0 . 7 0 0 . 4 5 t y p . 0.10 convex only 5 r e f . r0.6 typ. 1 0 r e f . 3.2 2 . 5 4.7 c 1 1 . 4 r e f min. m IRAMX16UP60A note 3 note 2 note 1

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