this is information on a product in full production. january 2015 docid027306 rev 1 1/8 FERD30SM100DJF field effect rectifier datasheet ? production data features ? st proprietary process ? reduce leakage current ? low forward voltage drop ? high frequency operation ? ecopack ? 2 compliant component description the FERD30SM100DJF is based on a proprietary technology that achieves the best in class v f /i r trade-off for a given silicon surface. this 100 v rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. tm: powerflat is a trademark of stmicroelectronics . $ $ $ $ . . $ $ 3 r z h u ) / $ 7 ? [ table 1. device summary symbol value i f(av) 30 a v rrm 100 v t j (max) +175 c v f (typ) 0.395 v www.st.com
characteristics FERD30SM100DJF 2/8 docid027306 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 0.562 x i f(av) + 0.0057 i f 2 (rms) table 2. absolute ratings (limiting values, at 25 c, unless otherwise specified, anode terminals short-circuited) symbol parameter value unit v rrm repetitive peak reverse voltage 100 v i f(rms) forward rms current 45 a i f(av) average forward current, = 0.5 t c = 100 c 30 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 180 a t stg storage temperature range -65 to + 175 c t j (1) maximum operating junction temperature 175 c 1. condition to avoid thermal runaway for a diode on its own heatsink dptot dtj < 1 rth(j-a) table 3. thermal resistance symbol parameter value (max) unit r th(j-c) junction to case 2.6 c/w table 4. static electrical characteristics (anode terminals short-circuited) symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v r rm - - 150 a t j = 125 c - 8 16 ma t j = 125 c v r = 70 v - - 9 v f (2) forward voltage drop t j = 25 c i f = 5 a - - 0.48 v t j = 125 c - 0.395 0.435 t j = 25 c i f = 10a --0.595 t j = 125 c - 0.51 0.555 t j = 25 c i f = 30 a -0.97 t j = 125 c - 0.665 0.735 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2%
docid027306 rev 1 3/8 FERD30SM100DJF characteristics 8 figure 1. average forward power dissipation versus average forward current figure 2. average forward current versus ambient temperature ( = 0.5) / / / / / 3 ) $ 9 : , ) $ 9 $ 7 / w s 7 w s 7 d p e ? & |