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TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 1foff22 semtech proprietaryf&fconfdential TS51111 triunefproducts highfefciencyfsynchronousfrectiferfandf chargingficfforfwirelessfpowerfapplications features ? high efciency synchronous rectifcation of ac input ? supports both direct and indirect charging applications ? supports wpc qi? compliant and non-compliant systems ? low rds-on rectifer switches ? high voltage input for higher power systems ? up to 20w+ output ? >98% efciency at high currents ? integrated switches for load modulation ? integrated switch for battery disconnect ? integrated precharge current source ? 50ma output low iq ldo ? analog mux for adc sensing ? supply under voltage lockout ? low external component count ? ultra-low standby quiescent current ? junction operating temperature -40c to 125c applications ? cell phones and smart phones ? tablet computers ? ereaders ? laptop computers ? small digital cameras ? portable video recorders ? wireless charging for portable devices description the TS51111 is a fully-integrated synchronous rectifer for wireless charging applications with additional integrated components to minimize system bom. the TS51111 includes a high efciency synchronous rectifer to convert the input ac power signal to a dc output level for battery charging. the device supports both direct battery charging and indirect power applications. low rds-on switches minimize power dissipation. high voltage input capability allows for simple and robust secondary side charger implementation. an integrated switch provides the battery charging path and combined with the rectifer provides back feed protection to the ac inputs. a precharge current source is also included for low battery voltage precharge operation. communication capability is achieved using integrated high voltage switches. the TS51111 includes several additional modules to allow simple integration into wireless power systems. integrated resistor dividers with zero-current of-mode allow external adc measurement of pdc, packp, usb and thermistor voltages. high voltage switches are included for communication modulation. power to an external controller is provided through an integrated ldo. the ultra-low quiescent current regulator can supply high output currents at low dropout with minimal current draw from the battery. available in a 45 pin wcsp and 36 pin 6x6 qfn package. www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 2foff22 semtech proprietaryf&fconfdential pinoutf(wcsp) f(topfview) vacdetp gndp gndp gnd packn vac2 vac 2v ac 2v ac 1v ac 1 bst2p dc pdcp dc pdc bst1o vp mod1 therm sda scl amux packs rxd agnd en_mod pgnd packp mod2 uart packp usb vref txd vcore vac2 vac2v ac2v ac1v ac 1 pdcp dc pdcp dc pdc a1 a2 a3 a4 a5 b1 b2 b3 b4 b5 c1 c2 c3 c4 c5 d1 d2 d3 d4 d5 e1 e2 e3 e4 e5 f1 f2 f3 f4 f5 g1 g2 g3 g4 g5 h1 h2 h3 h4 h5 i1 i2 i3 i4 i5 www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 3foff22 semtech proprietaryf&fconfdential pinfdescriptionf(wcsp) pinf# pinfname pinffunction description a1 scl i2c clock i2c clock a2 amux analog sense analog mux output a3 agnd analog ground quiet ground connection a4 mod1 mod cap connection pulldown for capacitive modulation a5 mod2 mod cap connection pulldown for capacitive modulation b1 sda i2c data i2c data b2 vref vref output adc reference output b3 packn packn sense battery negative terminal b4 usb usb supply usb supply and detection input b5 en_mod enable modulation enables modulation switches c1 vcore vcore ldo ldo output c2 therm thermistor drive thermistor drive c3 uart uart bus uart bus c4 txd uart tx uart tx c5 packs output current sense sense node for output current d1 bst1 bst cap boost capacitor connection for hs fets d2 ovp ov clamp overvoltage pulldown clamp d3 rxd uart rx uart rx d4, d5 packp battery connection battery positive terminal e1 bst2 bst cap boost capacitor connection for hs fets e2-5 pdc input power rectifed input signal f1-f3 vac2 coil input ac power input from coil f4, f5 vac1 coil input ac power input from coil g1 vacdet vac detect indicates incoming power to external micro g2-5 pgnd power gnd gnd for synchronous rectifer and charging path h1-h3 vac2 coil input ac power input from coil h4, h5 vac1 coil input ac power input from coil i1-5 pdc rectifed voltage filter capacitor connection for rectifed voltage www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 4foff22 semtech proprietaryf&fconfdential pinoutf(qfn) f(topfview) www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 5foff22 semtech proprietaryf&fconfdential pinfdescriptionf(qfn) pinf# pinfname pinffunction description 1 en_mod enable modulation enables modulation switches 2 txd uart tx uart tx 3 rxd uart rx uart rx 4 packs output current sense sense node for output current 5 packp_k packp kelvin packp kelvin 6 packp battery connection battery positive terminal 7, 13-14 pdc rectifed voltage filter capacitor connection for rectifed voltage 8, 11-12 vac1 coil input ac power input from coil 9-10, 17-18 pgnd power gnd gnd for synchronous rectifer and charging path 15-16, 20 vac2 coil input ac power input from coil 19 vac_det vac detect indicates incoming power to external micro 21 ovp ov clamp overvoltage pulldown clamp 22 bst2 bst cap boost capacitor connection for hs fets 23 bst1 bst cap boost capacitor connection for hs fets 24 vcore vcore ldo ldo output 25 therm thermistor drive thermistor drive 26 sda i2c data i2c data 27 scl i2c clock i2c clock 28 nc no connect no connect 29 vref vref output adc reference output 30 amux analog sense analog mux output 31 uart uart bus uart bus 32 packn packn sense battery negative terminal 33 agnd analog ground quiet ground connection 34 mod1 mod cap connection pulldown for capacitive modulation 35 mod2 mod cap connection pulldown for capacitive modulation 36 usb usb supply usb supply and detection input www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 6foff22 semtech proprietaryf&fconfdential functionalfblockfdiagram figuref1:ffTS51111fblockfdiagram packp agnd vac1 c out batt c s vac2 ~ ~ + - packn synchronous rectifier c d mod1 vcore c in c core c b1 bst 1 pdc bst2 c b2 vcore reg predriv e en_mod ovp detect ovp c d mod2 en_s w agnd uart txd rxd en_pre amux pgnd pack- pack- vcore a2d rs TS51111 predriv e vref c ref vref c r pack- pack+ usb digital control scl sda packp_div pdc_div ibsense vac_det iosense ibsense a en_therm vref therm iosense a packpsns temp www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 7foff22 semtech proprietaryf&fconfdential absolutefmaximumfratingf over operating freeCair temperature range unless otherwise noted (1, 2, 3) parameter value unit vac1, vac2, pdc, mod1, mod2, ovp -0.3 to 22 v bst1, bst2 -0.3 to (vac + 5.5) v vcore, tx, rx, uart, packp, scl, sda, vac_det, vref, amux, vcore, usb -0.3 to 5.5 v operating junction temperature range, tj -40 to 125 c storage temperature range, tstg -65 to 150 c electrostatic discharge C human body model 2k v electrostatic discharge C machine model +/-200 v lead temperature (soldering, 10 seconds) 260 c notes: (1) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating con - ditions is not implied. exposure to absoluteCmaximumCrated conditions for extended periods may affect device reliability. (2) all voltage values are with respect to network ground terminal. (3) esd testing is performed according to the respective jesd22 jedec standard. recommendedfoperatingfconditions symbol parameter min typ max unit vac pp input operating voltage 20 v f vac input operating frequency 100 210 khz packp battery input when externally driven 2.5 5.5 v l in inductor (measured on charging mat) 14* uh c r parallel resonant capacitor 1.8* nf c s series resonant capacitor 183* nf c o modulation capacitors 22 nf c out output capacitor 0.8 1 uf c core ldo decoupling capacitor 8 10 uf c b1 , c b2 rectifer boost capacitors 200 220 240 nf c in synchronous rectifer / pdc decoupling capacitor 10 20 uf c amux analog mux decoupling capacitor 1 2 nf c ref vref decoupling capacitor 80 100 120 nf t a operating free air temperature -40 85 c t j operating junction temperature -40 125 c * exact values of the resonant capacitors and inductor will depend on the specifc system confguration. www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 8foff22 semtech proprietaryf&fconfdential thermalfcharacteristics symbol parameter value units ja 36qfn thermal resistance junction to air (note 1) 32 c/w note 1: assumes 3.917 x 3.917 in2 area of 1 oz copper, 4 layer pcb, 4 thermal vias under pad, and 25c ambient temperature. characteristics electrical characteristics, t j = -40c to 85c, pdc = packp = 4.2v (unless otherwise noted) symbol parameter condition min typ max unit i q i q,standby,lpm quiescent current in low power mode current from packp, ildo = 0, en_ vref = en_sw = en_pre = 0 20 30 ua i q,disable quiescent current in disable (direct charge, low power mode disabled) current from packp, ildo = 0, en_ vref = en_sw = en_pre = 0 2 ua uvlof v uvlo-pack_p packp uvlo packp rising 2.1 v hyst uvlo-pack_p packp uvlo hysteresis 400 mv pdc-packpfpassfdevice t sw-on delay from en_sw to switch on 200 us t sw-off delay from en_sw to switch off 100 ns i precharge precharge current relative to set point t = 25c; pdc = 3.5v; packp = 2.7v i nom -20% i nom i nom +20% tc precharge precharge current temperature coefcient 25c to 85c -0.3 %/c i limit current limit at 3.2 a setting 2.2 3.2 a uartf t rx delay from uart to rx 0.7 us t tx delay from tx to uart 0.6 us v t,uart uart threshold 0.8 v v t,tx tx threshold 0.8 v r dson,rx rx switch resistance 10 sdaf/fsclf/fen_modfdigitalfinputs v ih vcore = 1.5v voltage rising 0.875 v v il vcore = 1.5v voltage falling 0.465 v v ih vcore = 1.8v voltage rising 1.01 v v il vcore = 1.8v voltage falling 0.525 v v ih vcore = 2.5v voltage rising 1.25 v v il vcore = 2.5v voltage falling 0.665 v v ih vcore = 3.3v voltage rising 1.47 v v il vcore = 3.3v voltage falling 0.825 v r in pin input impedance resistance to gnd 1m www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 9foff22 semtech proprietaryf&fconfdential electrical characteristics, t j = -40c to 85c, pdc = packp = 4.2v (unless otherwise noted) symbol parameter condition min typ max unit vacfdetect v oh output high voltage totem-pole confguration only. 100ua load. vcore- 100mv v v ol output low voltage totem-pole or open-drain confgurations. 100ua load. 100 mv i off output leakage output leakage in open-drain of-state. 0.1 ua r dson,vac_detect switch resistance output resistance to gnd in open-drain on-state. 10 vref cvref vref decoupling capacitor 80 100 120 nf vvref vref voltage t = 0 to 85 c, iout 0ma to 2ma 1.988 2.0 2.012 v rpdc-div pdc_div ratio t = 0 to 85 c, pdc_div_sel = 0 0.048 0.05 0.052 v/v t = 0 to 85 c, pdc_div_sel = 1 0.198 0.2 0.202 v/v rpackp-div packp_div ratio t = 0 to 85 c 0.198 0.2 0.202 v/v rusb-div usb_div ratio t = 0 to 85 c 0.198 0.2 0.202 v/v rtherm-div therm_div ratio t = 0 to 85 c 0.495 0.5 0.505 v/v iq,vref vref quiescent current packp current if vref enabled 300 ua ten-vref vref enable time delay from en_vref to vref available 3.2 us mod t mod-on en_mod to switches on delay 3 us t mod-off en_mod to switches off delay 0.7 us i q,mod mod block quiescent current current from packp when mod switches closed. en_mod hi. en_ vref = en_se = en_pre = lo 100 ua r dson,mod mod switch resistance mod1 to mod2 3 lowfpowerfldo vcore nom vcore voltage packp = 4.2v 3.3 v v dropout dropout voltage packp = 2.3v, ivcore=1ma 100 mv i out output current packp=4.2v, vcore = 0.9*vcore nom 10 50 ma c core ldo decoupling capacitor 0.8 1 1.2 uf ovp vovp ovp threshold 21 v rdson,ovp ovp switch resistance 2 www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 10foff22 semtech proprietaryf&fconfdential electrical characteristics, t j = -40c to 85c, pdc = packp = 4.2v (unless otherwise noted) symbol parameter condition min typ max unit temperaturefsensing t shutdown over-temperature shutdown threshold temperature rising 170 c t hyst over-temperature shutdown hysteresis 10 c v tsense temperature sensor voltage 25c 0.725 .75 0.775 v tcv tsense temperature coefcient 0c to 85c 2.4 mv/c currentffsensing ibsense gain battery current sense amp gain packn - agnd 10mv to 20mv; gain setting = 20 19.6 20 20.4 v/v iosense gain output current sense amp gain packp - packs 10mv to 20mv gain setting = 20; packp = 5v 19.6 20 20.4 v/v ibsense v offset battery current sense amp ofset packn - agnd = 20mv; gain setting = 20; 25c -0.5 0 0.5 mv iosense v offset output current sense amp ofset packp - packs = 20mv gain = 20; packp = 5v; 25c -0.5 0 0.5 mv v ib,max full range amp output 750 mv v io,max full range amp output 750 mv vacfdetect v oh output high voltage totem-pole confguration only. 100ua load. vcore- 100mv v v ol output low voltage totem-pole or open-drain confgurations. 100ua load. 100 mv i off output leakage output leakage in open-drain of-state. 0.1 ua r dson,vac_detect switch resistance output resistance to gnd in open-drain on-state. 10 functionalfdescription synchronousfrectifer the bridge rectifer in the TS51111 has a synchronous controller which shunts the forward bias of the bridge diodes. this allows the TS51111 to provide currents of up to 3.2a to be efciently transferred without signifcant power dissipation. the primary side of the bridge can stand-of up to 20v. on the secondary side, a capacitive load on the pdc pin can be used to help attenuate the voltage signal observed on both sides of the bridge rectifer. external boost capacitors cb1 and cb2 allow use of efcient high side nmos switches. the rectifer is disabled by default and will remain in an asynchronous mode until incoming power is detected or en_sw or en_pre are asserted. in asynchronous mode, the bridge fets will not switch and voltage rectifcation will occur through the parasitic diodes of the fets. in this mode, current draw in the ic is minimal. the bridge can be forced into asynchronous (no fet switching) or half synchronous (ls fet only switching) operation at any time using the cnfg register using the async or hsync bits respectively. this can be used to improve efciency at light loads where the switching losses of the bridge would exceed the conduction losses of the parasitic diodes. loadfswitchf/fblockingffet the integrated low impedance blocking switch provides a direct charging path to the battery and disconnects the output from the rectifed signal until the system has been successfully confgured. control of the switch is achieved through the i2c interface. an integrated charge pump guarantees maximum drive strength is available for the fet when operated as a switch. when hard switched, gate drive is slewed slowly to limit inrush current from the pdc cap to the battery. www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 11foff22 semtech proprietaryf&fconfdential functionalfdescriptionf (continued) the load switch can be reconfgured to operate as a linear regulator (see charge termination section below). when enabled, the output will soft-start to limit inrush current. in linear regulation mode, the pdc voltage must be regulated close to the dropout voltage to limit power dissipation in the ic. in linear regulation mode, a confgurable, integrated current limit circuit provides fault protection to the system. at the maximum setting, current limit is disabled. if the output current hits the current limit threshold, the device will automatically limit the output current and set the fault register ilim bit. in this condition, the pdc voltage will build up and must be managed through the system loop by reducing the transmitted power. if the transmitted power is not reduced, the TS51111 power dissipation will increase and eventually force a thermal shutdown of the part. current limit in direct charge mode is not integrated but can be easily implemented by monitoring device output current using the integrated current sense amplifers. ilimset<3:0> currentflimitftypicalf(ma) 0000 350 0001 600 0010 850 0011 1100 0100 1350 0101 1600 0110 1850 0111 2100 1000 2350 1001 2600 1010 2850 1011 3100 1100 3350 1101 3600 1110 3850 1111 disable ilim precharge in low battery conditions, an integrated precharge current source can be used to slowly charge the battery with a controlled dc current source. the precharge current source is controlled using the i2c interface. the precharge current has a negative temperature coefcient to mitigate temperature rise of the TS51111 during pre-charge. the level of the precharge current can be set according to the table below. preset<2:0> prechargefcurrentf(ma) 000 30 001 40 010 50 011 60 100 70 101 80 110 90 111 100 lowfpowerfmode the TS51111 supports a low-power mode when connected directly to a battery. in this mode, the ultra-low quiescent current ldo output is enabled to power an external microcontroller and the power consumption of the rest of the ic is minimized. in this mode, the TS51111 still supports uart level translation to the microcontroller. the part will automatically switch to normal operation when incoming power is detected. currentfsensefamps two current sense amplifers are included to allow for accurate battery charge current and received current measurements. the ibsense amplifer provides an output that is proportional to the sense voltage on the packn pin when a sense resistor is placed between packn and ground. the iosense amplifer will measure the diferential voltage across the sense resistor placed in series with the output current. this measurement is an indicator of the power received by the TS51111. the iosense output is not valid when the device is in current limit. the system should check the fault register periodically to ensure the device is in a proper operating state without any faults. both amplifers have a confgurable gain set by the iset register. the gains are confgurable from 10x to 80x. www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 12foff22 semtech proprietaryf&fconfdential functionalfdescriptionf (continued) usb the TS51111 will automatically detect the presence of a voltage applied to the usb pin. if the usbctrl bit is set low and a voltage is applied to the usb pin, the part will respond by disabling all charging paths to the battery and switching the ldo power input from the battery to the usb. if the usbctrl bit is set hi, the part will not automatically disable charging or switch the ldo power input. the usbctrl bit is programmed in non-volatile memory (nvm) during manufacturing and is not user confgurable. in either condition, the usbdet bit in the fault register will be set. when usb power is removed, the part will return to normal operation. ldo the TS51111 ldo supports a variety of system confgurations. an on-chip ultra-low iq ldo is provided for powering external system components when a battery or usb supply is available. the ldo is designed to operating with minimum quiescent but can still deliver high output current at low dropout voltage. integrated current limit provides additional protection. if an external usb power supply is available, the ldo will draw its input power from the usb pin instead of from the battery. in the event that neither an external usb supply nor an external battery is available, the ldo will automatically power- up of the rectifed voltage when incoming power is detected and provide power to an external microcontroller. to support multiple possible external microcontrollers, the internal ldo has a confgurable output voltage. the voltage is set according to the following table. the ldoset<1:0> bits are programmed in non-volatile memory (nvm) during manufacturing and are not user confgurable. ldoset<1:0> vcoref(v) 00 1.5 01 1.8 10 2.5 11 3.3 (default) vacfdetect the presence of incoming power on the coils will be indicated by the TS51111 by asserting the vac_det output pin. the pin will be de-asserted when incoming power is removed. the vac_detect output can be confgured as open-drain with an external resistor pull-up or as a totem pole with a vcore high level. this is set using the vac_cnfg bit with hi for open-drain and low for totem-pole. uart uart level translators are included to facilitate communication between system components. the level shifters will translate voltage levels from vcore for the system microprocessor to packp for a separate system. vref an internal high-accuracy vref circuit provides a precision reference for external analog-to-digital converters. integrated voltage dividers provide sense voltages for external adc measurement. the vref circuit is enabled using the en_vref bit and will not draw any current when not active. ovp an on-board over-voltage sensor on the pdc signal is available if additional external over-voltage protection is needed. in an over-voltage condition, the ovp fet is active to provide a low impedance path to ground on the ovp pin. in addition, the ovp fet can be forced on using the register bit. this can be used to provide an additional load on pdc if required. in an ovp condition, the ovp bit of the fault register will be set hi. temperaturefsensing the die temperature of the TS51111 is measured using an onboard temperature sensor. the output of the temperature sensor is available on the amux pin. if the temperature of the TS51111 exceeds the tsd threshold, all high current operations will be disabled until the die temperature reaches a safe level. temperature hysteresis prevents rapid entering and exiting of the over-temperature state. in thermal shutdown, the load switch, precharge current, and synchronous rectifer are disabled. all other functions including ovp and mod will still be available. when the tsd threshold is hit, the tsd bit in the fault register will be set. www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 13foff22 semtech proprietaryf&fconfdential functionalfdescriptionf (continued) chargeftermination to allow for accurate charge termination in a charging application, the TS51111 load switch can be reconfgured to operate as a voltage regulator. in this mode, the switch source voltage will be regulated to the voltage set by the voutset<6:0> bits. the switch is put into this mode by asserting the en_top bit of the confguration register. available voltage settings and the corresponding codes are shown. to support indirect charge applications, the en_top and ind_set bits must both be set hi. the output voltage will still be determined by the voutset<6:0> bits. the vout setpoints are 3.0v to 5.54v in 20mv steps. in addition, voutset<6:0>=0x64 will select a 5.0v setpoint. amux to reduce the number of connections required between the microprocessor and the TS51111, all analog outputs from the TS51111 are measured from the same analog pin and selectable via the amux register. signals on the amux pin are bufered using an internal unity gain amplifer. when unselected, the amux pin will be high impedance. amux<2:0> analogfsignal 000 ---- 001 pdc_div 010 iosense 011 ibsense 100 temp 101 packp_div 110 usb_div 111 therm_div thermistorfdriver an integrated thermistor driver allows system temperature measurement. when enabled, the thermistor drive will drive the vref voltage onto the therm pin. when disabled, the therm pin will be high impedance to allow external drive of the same thermistor. in the automatic mode, the thermistor driver is enabled whenever battery charging is enabled. this is whenever en_sw or en_pre are active. the voltage on the therm pin can be measured using the internal voltage divider and will be visible on the amux pin. tctrl<1:0> thermistorfoperation 00 disable 01 enable 10 auto 11 www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 14foff22 semtech proprietaryf&fconfdential controlfregisters reg r/w description lson r/w forces on both ls fets when hi. allows normal synchronous rectifer operation when lo. vac_config r/w confgures vac_det output pin behavior. totem pole confguration when hi. open-drain confguration when lo. hsync r/w forces half-synchronous rectifer operation (ls fet only switching) when lo. allows synchronous rectifer operation when hi. (async has priority when lo) async r/w disables synchronous rectifer operation when lo. allows synchronous rectifer operation when hi. (has priority over hsync when lo) en_vref r/w enables vref reference for external analog-to-digital converters when hi. disables vref reference when lo. en_top, en_sw r/w en_top = 0, en_sw = 0 load switch is disabled en_top = 1, en_sw = x load switch is enabled as an ldo en_top = 0, en_sw = 1 load switch is enabled as a switch en_pre r/w enables the precharge current source when hi. current source is disabled when lo. ind_set r/w confgures part for indirect charge operation when hi. confgures part for topof or direct charge operation when lo. packp_ld_en r/w enables an internal 500 ohm resistive load on packp when hi. load is disconnected when lo. ovp_on r/w forces the ovp fet to turn on as defned by the ovp_cs bit when hi. ovp is triggered only by high voltage on pdc when lo. en_mod r/w turns on the mod fets when hi. turns of the mod fets when lo. preset <2:0> r/w sets the level of the pre-charge current amux <2:0> r/w confgures measurement point for amux pin pdc_div_sel r/w changes the ratio of the pdc divider ilimset <3:0> r/w confgures the indirect charging internal current limit tctrl <1:0> r/w confgures the behavior of the thermistor driver (therm pin) dis_vref r/w force the vref output of ovp_cs r/w confgures the ovp fet as 30ma current source (hi) or a switch (lo) amux_10k_pldn r/w enable a 10k pull down load resistor on amux bufer vcore_indset r/w optimizes vcore regulator for indirect charge mode. hi_r r/w increases the ron for hs switches in the synchronous rectifer ib <2:0> r/w confgures the gain of the ibsense amplifer (000=10x, 001=20x,111=80x) io <2:0> r/w confgures the gain of the iosense amplifer (000=10x, 001=20x,111=80x) voutset <6:0> r/w confgures the vout voltage setting for charge termination packp_ovp r on-die over-voltage sensor status bit. bit is hi during a packp over-voltage condition. ovp r on-die over-voltage sensor status bit. bit is hi during a pdc over-voltage condition. tsd r on-die thermal sensor over-temperature status bit. bit is hi during an over-temperature condition. usbdet r status bit that indicates voltage applied to usb pin. bit is hi when usb voltage is detected. ilim r on-die current limit status bit. bit is hi when current-limit is active. www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 15foff22 semtech proprietaryf&fconfdential registerfmap reg ad r/w b7 b6 b5 b4 b3 b2 b1 b0 cnfg 0x0 r/w 0x00 vac_cnfg hsync async en_vref en_top en_pre en_sw cnfg2 0x1 r/w 0x00 ind_set packp_ld_ en ovp_on en_mod preset 0x2 r/w 0x00 preset<2> preset<1> preset<0> amux 0x3 r/w 0x00 pdc_div_ sel amux<2> amux<1> amux<0> 0x4 r/w 0x00 ilimset<3> ilimset<2> ilimset<1> ilimset<0> tctrl 0x5 r/w 0x00 hi_r vcore_ indset amux_10k_ pldn en_ovp_cs dis_vref tctrl<1> tctrl<0> iset 0x6 r/w 0x00 ib<2> ib<1> ib<0> io<2> io<1> io<0> 0x7 r/w 0x00 fault 0x8 r -- packp_ovp ovp tsd usbdet ilim device address is 0x48 i 2 cfinterfaceftimingfrequirements symbol parameter standard mode fast mode(1) unit min max min max fscl i 2 c clock frequency 0 100 0 400 khz tsch i 2 c clock high time 4 0.6 s tscl i 2 c clock low time 4.7 1.3 s tsp (2) i 2 c tolerable spike time 0 50 0 50 ns tsds i 2 c serial data setup time 250 250 ns tsdh i 2 c serial data hold time 0 0 s ticr (2) i 2 c input rise time 1000 300 ns ticf (2) i 2 c input fall time 300 300 ns tocf (2) i 2 c output fall time; 10 pf to 400 pf bus 300 300 ns tbuf i 2 c bus free time between stop and start 4.7 1.3 s tsts i 2 c start or repeated start condition setup time 4.7 0.6 s tsth i 2 c start or repeated start condition hold time 4 0.6 s tsps (2) i 2 c stop condition setup time 4 0.6 s (1) the i2c interface will operate in either standard or fast mode. (2) parameters not tested in production. www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 16foff22 semtech proprietaryf&fconfdential 1 1 2 2 3 3 4 4 d d c c b b a a 11 TS51111 ev m 0. 1 4/26/2013 5: 25: 52 pm ti tl e si ze :n umbe r: da te: re vi si on: sh ee to f ti me : le tter wcsp package, no micro-vias ac 1 ac 2 coil j2 1uf 6.3v c1 7 100nf 50v c1 100nf 50v c1 3 10uf 25v c3 gnd 22nf 50v c1 1 22nf 50v c7 vc or e 1.8nf 50v c9 100nf 10v c1 8 10uf 6.3v c1 4 0.020 r1 gnd 10uf 6.3v c1 5 gnd + 1 - 2 ou t j1 5.6v d2 pd c tp 7 pd c en _m od va cd et sd a sc l am ux tp 8 am ux pa ck p va c1 va c2 pa ck s ag nd ag nd gnd 100pf 50v c8 10uf 25v c4 10nf 10v c1 6 gnd gnd gnd ag nd vc or e sc l en _m od sd a va cd et rese t de bu g ag nd 10k r2 2nf 10v c1 9 vc or e rese t sc l sd a de bu g ag nd mod2 35 mod1 34 ag nd 33 am ux 30 sc l 27 en _m od 1 us b 36 pa ck n 32 vr ef 29 sd a 26 pa ck s 4 tx d 2 ua rt 31 th erm 25 vc or e 24 pa ck p 6 rxd 3 ovp 21 bs t1 23 pd c 7 pd c 13 pd c 14 bs t2 22 va c1 8 va c1 11 va c2 15 va c2 16 va c2 20 p gnd 17 p gnd 10 p gnd 18 pa d 37 va cd et 19 pa ck p_ k 5 p gnd 9 va c1 12 nc 28 u1 ts 51111_ qfn3 6 vr ef np d1 150 r3 1 2 3 4 d3 gp io 1 18 gp io 2 19 de bu g 20 nr st 1 sd a 2 sc l 3 vs s 4 vdd 5 en _l oa d 6 gp io 3 7 le d 8 gp io 6 9 gp io 7 10 gp io 8 11 am ux 12 vr ef 13 va cd et 14 gp io 5 15 gp io 4 16 en _m od 17 u2 ts 81001-q fn am ux ag nd ledg ledr tp 9 us b 10uf 25v c5 10uf 25v c6 47nf 50v c2 68nf 50v c1 0 68nf 50v c1 2 gnd le dg le dr tp 1 tp 2 tp 3 tp 4 tp 5 tp 6 tp 10 va c1 vr ef us b 100 r4 gnd figuref2:ffTS51111fwirelessfreceiverfapplication applicationfschematic www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 17foff22 semtech proprietaryf&fconfdential packagefdrawingf(wcsp) units millimeters dimensions limits min nom max number of contacts n 45 contact pitch e 0.40 bsc overall height a 0.445 0.525 0.625 standof a1 0.12 0.20 0.30 moldel package tickeness a2 - - 0.325 overall width e 2.195 - 2.200 array width e1 1.60 bsc overall length d 3.795 - 3.800 array length d1 3.20 bsc contact diameter b 0.250 0.265 0.280 www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 18foff22 semtech proprietaryf&fconfdential packagefdrawingf(qfn) units millimeters dimensions limits min nom max number of pins n 36 pitch e 0.50 bsc overall height a 0.80 0.90 1.00 standof a1 0.00 0.02 0.05 contact thickness a3 0.20 ref overall length d 6.00 bsc exposed pad width e2 4.30 4.45 4.55 overall width e 6.00 bsc exposed pad length d2 4.30 4.45 4.55 contact width b 0.20 0.25 0.30 contact length l 0.45 0.55 0.65 contact-to-exposed pad k 0.20 - - www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 19foff22 semtech proprietaryf&fconfdential units millimeters dimensions limits min nom max contact pitch e 0.50 bsc optional center pad width w2 - - 4.45 optional tenter pad length t2 - - 4.45 contact pad spacing c1 - 6.00 - contact pad spacing c2 - 6.00 - contact pad width (x36) x1 - - 0.35 contact pad length (x36) y1 - - 0.65 distance between pads g 0.15 - - notes: dimensions and tolerancing per asme y14.5m bsc: basic dimension, theorically exact value shown with tolerances. ref: reference dimension, usually with tolerance, for information only. packagefdrawingf(qfn) www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 20foff22 semtech proprietaryf&fconfdential packageffmarkingf(qfn) legend: line 1 marking: ts triune systems logo y y = last digit of year m m = month (1=jan, 2=feb, 3=mar a=oct, b=nov, c=dec) line 2 marking: 51111 device identifcation line 3 marking: o pin 1 identifer ll ll = last two whole (non-fractional) digits of lot number s assembly site identifer 20 TS51111 version 2. 2 specifications subject to change www.triunesystems.com copyright ? 2012 , triune systems, llc triune systems p roprietary and confidential information qfn package top mark ing t s y m 5 1 1 1 1 o l l s legend: line 1 marking: ts triune systems logo y y = last digit of year m m = month (1=jan, 2=feb, 3=mar ? a=oct, b=nov, c=dec) line 2 marking: 51111 device identification line 3 marking: o pin 1 identifier ll ll = last two whole (non - fractional) digits of lot number s assembly site identifier legend: o pin 1 identifer line 1 marking: TS51111 device identifcation line 2 marking: xxxxxx lot number (2 - 9 digits) line 3 marking: y y = last digit of year m m = month (1=jan, 2=feb, 3=mar a=oct, b=nov, c=dec) 19 TS51111 version 2. 2 specifications subject to change www.triunesystems.com copyright ? 2012 , triune systems, llc triune systems p roprietary and confidential information wcsp package top mar king legend: o pin 1 identifier line 1 marking: ts 51111 device identification line 2 marking: xxxxxx lot number (2 - 9 digits) line 3 marking: y y = last digit of year m m = month (1=jan, 2=feb, 3=mar ? a=oct, b=nov, c=dec) packageffmarkingf(wcsp) www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 21foff22 semtech proprietaryf&fconfdential orderingfinformation partfnumber description TS51111-m22wcsr high efciency wireless power receiver, wcsp package TS51111-m22qfnr high efciency wireless power receiver, qfn package rohsfandfreachfcompliance triune systems is fully committed to environmental quality. all triune systems materials and suppliers are fully compliant with rohs (european union directive 2011/65/eu), reach svhc chemical restrictions (ec 1907/2006), ipc-1752 level 3 materials declarations, and their subsequent amendments. triune systems maintains certifed laboratory reports for all product materials, from all suppliers, which show full compliance to restrictions on the following: ? cadmium (cd) ? chlorofuorocarbons (cfcs) ? chlorinate hydrocarbons (chcs) ? halons (halogen free) ? hexavalent chromium (crvi) ? hydrobromofuorocarbons (hbfcs) ? hydrochlorofuorocarbons (hcfcs) ? lead (pb) ? mercury (hg) ? perfuorocarbons (pfcs) ? polybrominated biphenyls (pbb) ? polybrominated diphenyl ethers (pbdes) www.semtech.com
TS51111 finalfdatasheet f f revf2.2 aprilf17,f2015 22foff22 semtech proprietaryf&fconfdential contactfinformation semtechfcorporation 200fflynnfroad,fcamarillo,fcaf93012 phone:f(805)f498-2111,ffax:f(805)f498-3804 www.semtech.com importantfnotice informationfrelatingftofthisfproductfandfthefapplicationforfdesignfdescribedfhereinfisfbelievedftofbefreliable,fhoweverfsuchfinformationfisfprovidedfasfaf guidefonlyfandfsemtechfassumesfnofliabilityfforfanyferrorsfinfthisfdocument,forfforfthefapplicationforfdesignfdescribedfherein.fsemtechfreservesfthefrightf tofmakefchangesftofthefproductforfthisfdocumentfatfanyftimefwithoutfnotice.fbuyersfshouldfobtainftheflatestfrelevantfinformationfbeforefplacingfordersf andfshouldfverifyfthatfsuchfinformationfisfcurrentfandfcomplete.fsemtechfwarrantsfperformancefoffitsfproductsftofthefspecifcationsfapplicablefatftheftimef offsale,fandfallfsalesfarefmadefinfaccordancefwithfsemtechsfstandardftermsfandfconditionsfoffsale.f semtechfproductsfarefnotfdesigned,fintended,fauthorizedforfwarrantedftofbefsuitablefforfusefinflife-supportfapplications,fdevicesf orfsystems,forfinfnuclearfapplicationsfinfwhichftheffailurefcouldfbefreasonablyfexpectedftofresultfinfpersonalfinjury,flossfofflifef orfseverefpropertyforfenvironmentalfdamage.ffinclusionfoffsemtechfproductsfinfsuchfapplicationsfisfunderstoodftofbefundertakenf solelyfatfthefcustomersfownfrisk.fshouldfafcustomerfpurchaseforfusefsemtechfproductsfforfanyfsuchfunauthorizedfapplication,fthefcustomerfshallf indemnifyfandfholdfsemtechfandfitsfofcers,femployees,fsubsidiaries,fafliates,fandfdistributorsfharmlessfagainstfallfclaims,fcostsfdamagesfandfattorneyf feesfwhichfcouldfarise. thefsemtechfnamefandflogofarefregisteredftrademarksfoffthefsemtechfcorporation.ftriunefsystems,fl.l.c.fisfnowfafwholly-ownedfsubsidiaryfoffsemtechf corporation.fftheftriunefsystems?fnamefandflogo,fmppt-lite?,fandfnanosmart?fareftrademarksfofftriunefsystems,fllc.finfthefu.s.a.ffallfotherftrademarksf andftradefnamesfmentionedfmayfbefmarksfandfnamesfoffsemtechforftheirfrespectivefcompanies.fsemtechfreservesfthefrightftofmakefchangesfto,forf discontinuefanyfproductsfdescribedfinfthisfdocumentfwithoutffurtherfnotice.fsemtechfmakesfnofwarranty,frepresentationforfguarantee,fexpressforf implied,fregardingfthefsuitabilityfoffitsfproductsfforfanyfparticularfpurpose.fallfrightsfreserved. ?fsemtechf2015

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