document number: 81894 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.5, 03-mar-10 1 high speed infrared emitting diode , 940 nm, gaalas double hetero vsmb3940x01 vishay semiconductors description vsmb3940x01 is an infrared, 940 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a plcc-2 package for surface mounting (smd). features ? package type: surface mount ? package form: plcc-2 ? dimensions (l x w x h in mm): 3.5 x 2.8 x 1.75 ? peak wavelength: p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 60 ? low forward voltage ? suitable for high pulse current operation ? high modulation bandwidth: f c = 24 mhz ? good spectral matching with si photodetectors ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering acc. j-std-020 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? find out more about vishays automotive grade product requirements at: www.vishay.com/applications applications ? irda compatible data transmission ? miniature light barrier ? photointerrupters ? optical switch ? control and drive circuits ? shaft encoders note test conditions see table basic characteristics note moq: minimum order quantity 94 8553 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) vsmb3940x01 13 60 940 15 ordering information ordering code packaging remarks package form VSMB3940X01-GS08 tape and reel mo q: 7500 pcs, 1500 pcs/reel plcc-2 vsmb3940x01-gs18 tape and reel mo q: 8000 pcs, 8000 pcs/reel plcc-2 ** please see document vishay material category policy: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81894 2 rev. 1.5, 03-mar-10 vsmb3940x01 vishay semiconductors high speed infrared emitting diode, 940 nm, gaalas double hetero note t amb = 25 c, unless otherwise specified fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm, soldered on pcb r thja 250 k/w 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21343 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 250 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21344 r thja = 250 k/w t amb - ambient temperature (c) i f - forward current (ma) basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.15 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.2 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 70 pf radiant intensity i f = 100 ma, t p = 20 ms i e 71321mw/sr i f = 1 a, t p = 100 s i e 130 mw/sr radiant power i f = 100 ma, t p = 20 ms e 40 mw temperature coefficient of e i f = 1 ma tk e - 1.1 %/k i f = 100 ma tk e - 0.51 %/k angle of half intensity ? 60 deg peak wavelength i f = 30 ma p 940 nm spectral bandwidth i f = 30 ma ? 25 nm temperature coefficient of p i f = 30 ma tk p 0.25 nm/k rise time i f = 100 ma, 20 % to 80 % t r 15 ns fall time i f = 100 ma, 20 % to 80 % t f 15 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 24 mhz virtual source diameter d 0.5 mm
document number: 81894 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.5, 03-mar-10 3 vsmb3940x01 high speed infrared emitting diode, 940 nm, gaalas double hetero vishay semiconductors basic characteristics t amb = 25 c, unless ot herwise specified fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - relative radiant in tensity vs. ambient temperature fig. 7 - relative radi ant power vs. wavelength fig. 8 - relative radiant in tensity vs. angular displacement 1 10 100 1000 01 23 t p = 100 s t p /t= 0.001 v f - forward voltage (v) 21534 i f - forward current (ma) 90 92 94 96 98 100 102 104 106 108 110 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) v f, rel - relative forward voltage (%) i f = 100 ma i f = 10 ma i f = 1 ma 21443 t p = 20 ms 0.1 1 10 100 1000 1 10 100 1000 21420 i f - forward current (ma) i e - radiant intensity (mw/sr) t p = 0.1 ms 40 60 80 100 120 140 160 180 - 60 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) i e rel - relative radiant intensity (%) t p = 20 ms i f = 1 ma 21444 i f = 100 ma 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 - wavelength (nm) 21445 e rel - relative radiant power (%) i f = 30 ma 0.4 0.2 0 i e, rel - relative radiant intensity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81894 4 rev. 1.5, 03-mar-10 vsmb3940x01 vishay semiconductors high speed infrared emitting diode, 940 nm, gaalas double hetero package dimensions in millimeters solder profile fig. 9 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in mois ture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 168 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity leve l 3, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. 20541 mounting pad layout 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist 3.5 0.2 3 + 0.15 1.75 0.1 0.9 2.8 0.15 ca pin identification 2.2 ? 2.4 technical drawings according to din specifications drawing-no.: 6.541-5067.01-4 issue: 5; 04.11.08 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
document number: 81894 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.5, 03-mar-10 5 vsmb3940x01 high speed infrared emitting diode, 940 nm, gaalas double hetero vishay semiconductors tape and reel plcc-2 components are packed in antistatic blister tape (din iec (co) 564) for automatic component insertion. cavities of blister tape are covered with adhesive tape. fig. 10 - blister tape fig. 11 - tape dimensions in mm for plcc-2 missing devices a maximum of 0.5 % of the to tal number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. a maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. fig. 12 - beginning and end of reel the tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. the tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. the least component is followed by a carri er tape trailer with a least 75 empty compartements and sealed with cover tape. fig. 13 - dimens ions of reel-gs08 fig. 14 - dimens ions of reel-gs18 cover tape removal force the removal force lies between 0.1 n and 1.0 n at a removal speed of 5 mm/s. in order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180 with re gard to the feed direction. adhesive tape component cavity blister tape 94 8670 1.85 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8.3 7.7 3.5 3.1 2.2 2.0 0.25 94 8668 de-reeling direction tape leader min. 75 empty compartments > 160 mm 40 empty compartments carrier leader carrier trailer 94 8158 180 178 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8665 identification label: vishay type group tape code production code quantity 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8.4 120 18857 label: vishay type group tape code production code quantity
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