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this is information on a product in full production. february 2015 docid026382 rev 2 1/15 STH170N8F7-2 n-channel 80 v, 0.0028 typ., 120 a, stripfet? f7 power mosfet in a h2pak-2 package datasheet ? production data figure 1. internal schematic diagram features ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n-channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. + 3 $ . ' 7 $ % * 6 1 2 3 tab h 2 pak-2 order code v ds r ds(on) max. i d p tot STH170N8F7-2 80 v 0.0037 120 a 250 w table 1. device summary order code marking package packaging STH170N8F7-2 170n8f7 h 2 pak-2 tape and reel www.st.com
contents STH170N8F7-2 2/15 docid026382 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 docid026382 rev 2 3/15 STH170N8F7-2 electrical ratings 15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 80 v v gs gate-source voltage 20 v i d (1) 1. limited by package and rated according to r thj-c . drain current (continuous) 120 a i d (1) drain current (continuous) at t c = 100 c 120 a i dm drain current (pulsed) 480 a p tot (1) total dissipation at t c = 25 c 250 w t j operating junction temperature -55 to 175 c t stg storage temperature c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 0.6 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch 2 , 2oz cu. thermal resistance junction-pcb 35 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current, (pulse width limited by t jmax ) 35 a e as single pulse avalanche energy (starting tj = 25 c, i d = i av , v dd = 50 v) 615 mj electrical characteristics STH170N8F7-2 4/15 docid026382 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 80 v i dss zero gate voltage drain current v gs = 0, v ds = 80 v 1 a v gs = 0, v ds = 80 v, t c =125 c 100 a i gss gate body leakage current v ds = 0, v gs = +20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 60 a 0.0028 0.0037 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds =40 v, f=1 mhz, - 8710 - pf c oss output capacitance - 1330 - pf c rss reverse transfer capacitance -78 - pf q g total gate charge v dd =40 v, i d = 120 a v gs =10 v figure 14 -120 - nc q gs gate-source charge - 43 - nc q gd gate-drain charge - 26 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 40 v, i d = 60 a, r g = 4.7 , v gs = 10 v figure 13 -38-ns t r rise time - 53 - ns t d(off) turn-off delay time - 79 - ns t f fall time - 37 - ns docid026382 rev 2 5/15 STH170N8F7-2 electrical characteristics 15 table 8. source-drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 120 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 480 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5%. forward on voltage i sd = 120 a, v gs =0 - 1.2 v t rr reverse recovery time i sd = 120 a, di/dt = 100 a/s, v dd = 64 v, t j =150 c -54 ns q rr reverse recovery charge - 78 nc i rrm reverse recovery current - 2.9 a electrical characteristics STH170N8F7-2 6/15 docid026382 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q ? v p v p v 7 m ? & 7 f ? & 6 l q j o h s x o v h * , 3 * 6 $ single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -4 10 -3 10 -1 10 -5 10 -2 10 -2 10 -1 c 10 0 gipg300420141527sa , ' 9 ' 6 9 $ 9 9 9 * 6 9 9 9 * , 3 * 6 $ , ' 9 * 6 9 $ 9 ' 6 9 * , 3 * 6 $ 9 * 6 4 j q & |