symbol parameter ratings unit v ces collector-emitter voltage 600 volts v ge gate-emitter voltage 20 i c1 continuous collector current @ t c = 25c 80 amps i c2 continuous collector current @ t c = 105c 40 i cm pulsed collector current 1 160 ssoa switching safe operating area @ t j = 150c 160a @ 600v p d total power dissipation 345 watts t j , t stg operating and storage junction temperature range -55 to 150 c maximum ratings all ratings: t c = 25c unless otherwise speci ed. symbol characteristic / test conditions min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 5ma) 600 - - volts v ge(th) gate threshold voltage (v ce = v ge , i c = 500 a, t j = 25c) 345 v ce(on) collector emitter on voltage (v ge = 15v, i c = 40a, t j = 25c) 1.6 2.15 2.5 collector emitter on voltage (v ge = 15v, i c = 40a, t j = 125c) - - 2.8 i ces collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 --80 a collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 - - 2000 i ges gate-emitter leakage current (v ge = 20v) - - 100 na static electrical characteristics caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed . microsemi website - http://www.microsemi.com 052-6222 rev d 3 - 2012 apt40gt60br 600v, 80a, v ce(on) = 2.1v typical thunderbolt igbt ? the thunderbolt igbt ? is a new generation of high voltage power igbts. using non-punch-through technology, the thunderbolt igbt ? offers superior rugged- ness and ultrafast switching speed. features ? low forward voltage drop ? low tail current ? rohs compliant ? rbsoa and scsoa rated ? high frequency switching to 150khz ? ultra low leakage current t o - 2 4 7 g c e g c e
052-6222 rev d 3 - 2012 dynamic characteristic apt40gt60br symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v, v ce = 25v f = 1mhz - 2190 - pf c oes output capacitance - 220 - c res reverse transfer capacitance - 130 - v gep gate-to-emitter plateau voltage gate charge v ge = 15v v ce = 300v i c = 40a - 8.0 - v q g total gate charge 3 - 200 - nc q ge gate-emitter charge - 12 - q gc gate-collector charge - 86 - ssoa switching safe operating area t j = 150c, r g = 5 , v ge = 15v, l = 100 h, v ce = 600v 160 a t d(on) turn-on delay time inductive switching (25c) v cc = 400v v ge = 15v i c = 40a r g = 5 t j = +25c -12 - ns t r current rise time - 36 - t d(off) turn-off delay time - 124 - t f current fall time - 55 - e on1 turn-on switching energy 4 -- - j e on2 turn-on switching energy 5 - 945 - e off turn-off switching energy 6 - 828 - t d(on) turn-on delay time inductive switching (125c) v cc = 400v v ge = 15v i c = 40a r g = 5 t j = +125c -12 - ns t r current rise time - 33 - t d(off) turn-off delay time - 165 - t f current fall time - 58 - e on1 turn-on switching energy 4 -- - j e on2 turn-on switching energy 5 - 1342 - e off turn-off switching energy 6 - 1150 - symbol characteristic / test conditions min typ max unit r jc junction to case (igbt) - - 0.36 c/w r jc junction to case (diode) - - n/a w t package weight - 6.1 - g torque terminals and mounting screws - - 10 inlbf - - 1.1 nm v isolation rms voltage (50-60hz sinusoidal waveform from terminals to mounting base for 1 min.) 2500 - - volts 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages. 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to z a the igbt turn-on loss. tested in inductive switching test circuit shown in gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchin g loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance not including gate driver impedance. thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speci cations and information contained herein.
052-6222 rev d 3 - 2012 typical performance curves apt40gt60br 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 200a i c = 40a i c = 80a i c = 40a i c = 80a 13v 11v 6v 15v i c = 40a t j = 25c v ce = 480v v ce = 300v v ce = 120v t j = 25c t j = -55c v ge = 15v t j = 55c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 7v 8v 10v i c = 20a 9v
052-6222 rev d 3 - 2012 typical performance curves apt40gt60br v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 5 l = 100 h v ce = 400v v ge = +15v r g = 5 v ce = 400v t j = 25c , or 125c r g = 5 l = 100 h v ge = 15v v ce = 400v v ge = +15v r g = 5 v ce = 400v v ge = +15v r g = 5 r g = 5 , l = 100 h, v ce = 400v t j = 125c t j = 25c t j = 125c t j = 25c r g = 5 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 80a e off, 80a e on2, 40a e off, 40a e on2, 20a e off, 20a v ce = 400v v ge = +15v t j = 125c e on2, 80a e off, 80a e on2, 40a e off, 40a e on2, 20a e off, 20a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j)
typical performance curves apt40gt60br 052-6222 rev d 3 - 2012 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration figure 19b, transient thermal impedance model f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 1.0 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 75c v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) dissipated powe r (watts ) t j (c) t c (c) z ext are the external therma l impedances: case to sink, sink to ambient, etc. set to zero when modeling onl y the case to junction. z ext .07172 .1434 .1451 .00157 .0040 0.1270
052-6222 rev d 3 - 2012 apt40gt60br figure 22, turn-on switching waveforms and defi nitions figure 23, turn-off switching waveforms and defi nitions t j = 125c collector current collectorvoltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collectorvoltage collector current gate voltage switching energy 0 t d(off ) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circui t v cc apt30dq60 to-247 (b) package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) gate 5.45 (.215) bsc dimensions in millimeters and (inches ) 2-plcs. collector emitter collector
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