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FW705 rev.0 i page 1 of 4 i www.onsemi.com features composite type with a p-channel mosfet driving from a 2.5v supply voltage contained in a single package. high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss - -20 v gate-to-source voltage v gss 10 v drain current (dc) i d -- 6 a drain current (pw 10 s) i dp duty cycle 1% --52 a allowable power dissipation p d when mounted on ceramic substrate (1500mm 2 ? 0.8mm) 1unit, pw 10s 2.3 w t otal dissipation p t when mounted on ceramic substrate (1500mm 2 ? 0.8mm), pw 10s 2.5 w channel temperature tch 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =- -20v, v gs =0v --1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =- -10v, i d =- -1ma --0.4 --1.4 v forward transfer admittance ? yfs ? v ds =- -10v, i d =- -6a 7.8 13 s static drain-to-source on-state resistance r ds (on)1 i d =--6a, v gs =- -4v 30 40 m ? r ds (on)2 i d =--3a, v gs =- -2.5v 42 59 m ? marking : w705 continued on next page. ordering number : ena1030 FW705 p-channel silicon mosfet general-purpose switching device applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: FW705/d
FW705 rev.0 i page 2 of 4 i www.onsemi.com continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =--10v, f=1mhz 1720 pf output capacitance coss v ds =--10v, f=1mhz 260 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 245 pf t urn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 390 ns t urn-off delay time t d (off) see specified test circuit. 110 ns fall time t f see specified test circuit. 145 ns t otal gate charge qg v ds =--10v, v gs =--4v, i d =--6a 18.4 nc gate-to-source charge qgs v ds =--10v, v gs =--4v, i d =--6a 3.2 nc gate-to-drain ?iller?charge qgd v ds =--10v, v gs =--4v, i d =--6a 5.2 nc diode forward voltage v sd i s =--6a, v gs =0v --0.82 --1.2 v package dimensions electrical connection unit : mm (typ) 7005-003 switching time test circuit 14 5 8 5.0 4.4 6.0 0.3 1.5 1.8 max 0.1 0.595 1.27 0.2 0.43 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 pw=10 s d.c. 1% p. g 50 ? g s d i d = --6a r l =1.67 ? v dd = --10v v out FW705 v in 0v - -4v v in 8765 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 t op view
FW705 rev.0 i page 3 of 4 i www.onsemi.com drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 0 0 -- 1 -- 2 -- 3 -- 5 -- 6 - -0.2 -- 4 0 - -0.4 --0.6 --0.8 --1.0 - -0.1 --0.3 --0.5 --0.7 --0.9 v gs = --1.0v - -1.5v -- 2 . 0v - -2.5v - -8.0v it09896 0- -0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 v ds = --10v 25 c - -25 c t a=75 c it09897 - -4.0v - -5.0v -- 6 . 0v drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a i s -- v sd ? y fs ? -- i d static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v ambient temperature, ta -- c r ds (on) -- v gs r ds (on) -- ta - -60 --40 --20 0 20 40 60 80 100 120 140 160 -- 0 -- 1 -- 2 -- 3 -- 4 -- 6 -- 7 -- 5 -- 8 it09898 20 30 10 40 50 60 70 80 90 100 0 it09900 10 20 30 40 50 60 70 80 90 0 ta=25 c - -6a i d = --3a v gs = --4.0v, i d = --6a v gs = --2.5v, i d = --3a it09901 - -0.01 --0.1 23 57 23 57 2 3 57 - -1.0 --10 3 1.0 7 5 3 2 0.1 7 10 2 5 3 2 v ds = --10v 75 c 25 c t a= --25 c it09902 - -0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 - -0.01 - -0.1 - -10 7 5 3 2 2 - -1.0 7 5 3 2 7 5 3 v gs =0v - -25 c 25 c t a=75 c 0--5- -10 --15 --20 100 1000 5 3 2 7 5 3 2 f=1mhz ciss coss crss it09904 - -0.01 --0.1 23 57 2 - -1.0 357 2 - -10 357 2 100 7 5 3 2 1000 7 5 3 2 10 v dd = -- 10v v gs = -- 4 v t d (on) t d (off) t r t f it09903 drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns ciss, coss, crss -- v ds sw time -- i d
FW705 rev.0 i page 4 of 4 i www.onsemi.com a s o drain-to-source voltage, v ds -- v drain current, i d -- a v gs -- qg t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v 02 6 10 14 4812 16 20 18 0 - -0.5 - -1.0 - -1.5 - -2.0 - -2.5 - -3.0 - -3.5 - -4.0 v ds = --10v i d = --6a it09906 0 0 20 40 60 80 100 120 1.2 0.8 0.4 2.8 2.4 2.3 2.5 2.0 1.6 140 160 it13259 - -1.0 - -10 - -100 - -0.01 - -0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 it13258 - -0.01 23 57 - -1.0 --10 - -0.1 23 57 23 57 23 i d = --6a operation in this area is limited by r ds (on). 10ms 100ms 1m s i dp = --52a dc operation ( ta =25 c) 10s 1unit 10 s t a=25 c single pulse when mounted on ceramic substrate (1500mm 2 ? 0.8mm) t otal dissipation p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w p d (fet1) -- p d (fet2) allowable power dissipation, p d (fet2) -- w allowable power dissipation, p d (fet1) -- w 0 0.5 1.0 1.5 2.0 2.5 2.3 3.0 0 0.5 1.0 1.5 2.0 3.0 2.5 2.3 it13325 when mounted on ceramic substrate (1500mm 2 ? 0.8mm), pw 10s when mounted on ceramic substrate (1500mm 2 ? 0.8mm), pw 10s FW705/d

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