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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?p6 600vcoolmos?p6powertransistor IPW60R041P6 datasheet rev.2.0 final powermanagement&multimarket
2 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet to-247 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?p6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. theoffereddevicesprovideallbenefitsofafastswitchingsjmosfet whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. features ?increasedmosfetdv/dtruggedness ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 41 m w q g.typ 170 nc i d,pulse 267 a e oss @400v 20.5 j body diode di/dt 300 a/s type/orderingcode package marking relatedlinks IPW60R041P6 pg-to 247 6r041p6 see appendix a d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
3 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
4 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 77.5 49.0 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 267 a t c =25c avalanche energy, single pulse e as - - 1954 mj i d =13.4a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 2.96 mj i d =13.4a; v dd =50v; see table 10 avalanche current, repetitive i ar - - 13.4 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0...400v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation (non fullpak) to-247 p tot - - 481 w t c =25c storage temperature t stg -55 - 150 c - operating junction temperature t j -55 - 150 c - mounting torque (non fullpak) to-247 - - - 60 ncm m3 and m3.5 screws continuous diode forward current i s - - 67.2 a t c =25c diode pulse current 2) i s,pulse - - 267 a t c =25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 8 maximum diode commutation speed di f /dt - - 300 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 8 1) limited by t j max . maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
5 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet 3thermalcharacteristics table3thermalcharacteristics(nonfullpak)to-247 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 0.26 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
6 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet 4electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 3.5 4.0 4.5 v v ds = v gs , i d =2.96ma zero gate voltage drain current i dss - - - 10 5 - m a v ds =600, v gs =0v, t j =25c v ds =600, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.037 0.096 0.041 - w v gs =10v, i d =35.5a, t j =25c v gs =10v, i d =35.5a, t j =150c gate resistance r g - 1 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 8180 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 310 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 260 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 1200 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 29 - ns v dd =400v, v gs =13v, i d =44.4a, r g =1.7 w ;seetable9 rise time t r - 27 - ns v dd =400v, v gs =13v, i d =44.4a, r g =1.7 w ;seetable9 turn-off delay time t d(off) - 90 - ns v dd =400v, v gs =13v, i d =44.4a, r g =1.7 w ;seetable9 fall time t f - 5 - ns v dd =400v, v gs =13v, i d =44.4a, r g =1.7 w ;seetable9 table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 50 - nc v dd =400v, i d =44.4a, v gs =0to10v gate to drain charge q gd - 59 - nc v dd =400v, i d =44.4a, v gs =0to10v gate charge total q g - 170 - nc v dd =400v, i d =44.4a, v gs =0to10v gate plateau voltage v plateau - 6.1 - v v dd =400v, i d =44.4a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
7 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =44.4a, t j =25c reverse recovery time t rr - 630 - ns v r =400v, i f =44.4a,d i f /d t =100a/s; see table 8 reverse recovery charge q rr - 19 - c v r =400v, i f =44.4a,d i f /d t =100a/s; see table 8 peak reverse recovery current i rrm - 56 - a v r =400v, i f =44.4a,d i f /d t =100a/s; see table 8 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
8 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
9 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 40 80 120 160 200 240 280 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 10 20 30 40 50 60 70 80 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 20 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 98% typ r ds(on) =f( t j ); i d =35.5a; v gs =10v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
10 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 50 100 150 200 0 1 2 3 4 5 6 7 8 9 10 480 v 120 v v gs =f( q gate ); i d =44.4apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 1600 1800 2000 e as =f( t j ); i d =13.4a; v dd =50v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
11 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 520 540 560 580 600 620 640 660 680 700 v br(dss) =f( t j ); i d =1ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 10 5 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 e oss = f (v ds ) d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
12 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet 6testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v d v ( br ) ds i d v ds v ds i d
13 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet 7packageoutlines figure1outlinepg-to247,dimensionsinmm/inches d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v d v ( br ) ds i d v ds v ds i d
14 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet 8appendixa table11relatedlinks ? ifxcoolmos tm p6webpage: www.infineon.com ? ifxcoolmos tm p6applicationnote: www.infineon.com ? ifxcoolmos tm p6simulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v d v ( br ) ds i d v ds v ds i d
15 600vcoolmos?p6powertransistor IPW60R041P6 rev.2.0,2014-03-07 final data sheet revisionhistory IPW60R041P6 revision:2014-03-07,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2014-03-07 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v d v ( br ) ds i d v ds v ds i d

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