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ccd area image sensor high sensitivity in uv region, anti-blooming function included s12071 www.hamamatsu.com 1 the s12071 ccd area image sensor has a back-thinned structure that enables a high sensitivity in the uv to visible region as well as a wide dynamic range, low dark current, and an anti-blooming function. a dedicated driver circuit c12081 series (with camera link and usb 2.0 interfaces) is also provided (sold separately). structure parameter speci cation image size (h v) 24.576 24.576 mm pixel size (h v) 24 24 m number of total pixels (h v) 1056 1032 number of effective pixels (h v) 1024 1024 vertical clock phase 2 phases horizontal clock phase 2 phases output circuit tap a one-stage mosfet source follower tap b three-stage mosfet source follower package 40-pin ceramic dip window quartz cooling one-stage te-cooled high sensitivity in uv region one-stage te-cooled type low dark current anti-blooming function included number of effective pixels: 1024 1024 selectable readout port to match your application tap a: low noise ampli er (1 mhz max.) tap b: high-speed ampli er (10 mhz max.) icp spectrophotometry scienti c measuring instrument uv imaging features applications
ccd area image sensor s12071 2 absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature * 1 * 2 topr -50 - +50 c storage temperature * 2 tstg -50 - +70 c output transistor drain voltage v oda -0.5 - +30 v v odb -0.5 - +25 reset drain voltage v rda , v rdb -0.5 - +18 v output amplifier return voltage vret -0.5 - +18 v overflow drain voltage v ofd -0.5 - +18 v dump drain voltage v dd -0.5 - +18 v vertical input source voltage v isv -0.5 - +18 v overflow gate voltage v ofg -15 - +15 v dump gate voltage v dg -15 - +15 v vertical input gate voltage v igv -15 - +15 v summing gate voltage v sga , v sgb -15 - +15 v output gate voltage v oga , v ogb -15 - +15 v reset gate voltage v rga , v rgb -15 - +15 v transfer gate voltage v tg -15 - +15 v vertical shift register clock voltage v p1v , v p2v -15 - +15 v horizontal shift register clock voltage v p1h , v p2h v p3h , v p4h -15 - +15 v maximum current of built-in te-cooler * 3 imax - - 4.0 a maximum voltage of built-in te-cooler vmax - - 3.4 v * 1: chip temperature * 2: no condensation * 3: if the current greater than this value ows into the thermoelectric cooler, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not the damage threshold value. to protect the thermoelectric cooler and maintain s table operation, the supply current should be less than 60% of this maximum current. note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. when there is a temperature difference between a product and the ambient in high humidity environment, dew condensation may occur on the product surface. dew condensation on the product may cause a deterioration of characteristics and reliability.
ccd area image sensor s12071 3 electrical characteristics (ta=25 c, unless otherwise noted, operating condition: typ.) parameter symbol min. typ. max. unit signal output frequency * 5 tap a fca - 0.1 1 mhz tap b fcb - 210 vertical shift register capacitance c p1v , c p2v -15500-pf horizontal shift register capacitance c p1h , c p2h c p3h , c p4h -100-pf summing gate capacitance c sga , c sgb -15-pf reset gate capacitance c rga , c rgb -15-pf transfer gate capacitance c tg -160-pf charge transfer efficiency * 6 cte 0.99995 0.99999 - - dc output level * 5 tap a vout -16- v tap b - 8- output impedance * 5 tap a zo -3500- tap b - 170 - output mosfet supply current/node * 5 tap a ido -23 ma tap b - 6 9 power consumption * 5 * 7 tap a p -4565 mw tap b - 70 100 * 5: tap a: v oda =24 v, r la =10 kw, tap b: v odb =12 v, r lb =2.2 k * 6: charge transfer efficiency per pixel, measured at half of the full well capacity * 7: power consumption of the on-chip amplifier plus load resistance operating conditions (ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v oda 23 24 25 v v odb 11 12 13 reset drain voltage v rda , v rdb 14 15 16 v output ampli er return voltage * 4 vret - 1 2 v over ow drain voltage v ofd 11 12 13 v dump drain voltage v dd 11 12 13 v test point vertical input source v isv -v rd - v vertical input gate v igv -10 -9 -8 over ow gate voltage v ofg -10 -9 -8 v dump gate voltage v dg -10 -9 -8 v summing gate voltage high v sgah , v sgbh 789 v low v sgal , v sgbl -8 -7 -6 output gate voltage v oga , v ogb 567v reset gate voltage high v rgah ,v rgbh 678 v low v rgal , v rgbl -8 -7 -6 transfer gate voltage high v tgh 456 v low v tgl -10 -9 -8 vertical shift register clock voltage high v p1vh , v p2vh 456 v low v p1vl , v p2vl -10 -9 -8 horizontal shift register clock voltage high v p1hh , v p2hh v p3hh , v p4hh 789 v low v p1hl , v p2hl v p3hl , v p4hl -8 -7 -6 substrate voltage v ss -0-v external load resistance r la 81024 k r lb 2.0 2.2 2.4 * 4: output amplifier return voltage is a positive voltage with respect to substrate voltage, but the current flows in the direction of flow out of the sensor.
ccd area image sensor s12071 4 electrical and optical characteristics (ta=25 c, unless otherwise noted, operating condition: typ.) parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v full well capacity fw 280 350 - ke - ccd node sensitivity * 8 tap a sv 456 v/e - tap b 4.5 5.5 6.5 dark current * 9 td=25 c ds - 100 1000 e - /pixel/s td=0 c - 7 70 readout noise * 8 * 10 tap a nr -918 e - rms tap b - 50 100 dynamic range * 10 * 11 tap a dr 15555 3 8888 - - tap b 2800 7000 - - photoresponse nonuniformity * 12 prnu - 3 10 % spectral response range - 165 to 1100 - nm anti-blooming ab fw 100 - - - blemish point defect * 13 white spots - --3- black spots - - 10 - cluster defect * 14 --3- column defect * 15 --0- * 8: tap a: v oda =24 v, r la =10 k , tap b: v odb =12 v, r lb =2.2 k * 9: dark current is reduced to half for every 5 to 7 c decrease in temperature. * 10: signal output frequency=100 khz (tap a), 2 mhz (tap b) * 11: dynamic range=full well capacity/readout noise * 12: measured at one-half of the saturation output (full well capacity), using led light (peak emission wavelength: 660 nm) photoresponse nonuniformity = 100 [%] fixed pattern noise (peak to peak) signal * 13: white spots=pixels whose dark current is higher than 1 ke - after one-second integration at 0 c black spots=pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of the saturation charge) * 14: 2 to 9 contiguous defective pixels * 15: 10 or more contiguous defective pixels spectral response (without window) * 16 kmpdb0373eb * 16: spectral response is decreased according to the spectral transmittance characteristics of window material. quantum efficiency (%) wavelength (nm) (typ. ta=25 c) 200 300 400 500 600 700 800 900 1000 1100 120 110 100 90 80 70 60 50 40 30 20 10 0
ccd area image sensor s12071 5 device structure (conceptual drawing of top view) thinning 8 blank pixels 8 blank pixels tap a tap b 8-bevel 8-bevel 1024 signal out thinning 1024 signal out 4-bevel 4-bevel 3 4 5 6 7 38 33 32 29 28 25 24 23 8 9 10 11 12 13 14 15 16 17 18 19 20 2 1 1234 2 3 4 5 v h 5 v h note: when viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). however, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. to prevent this, provide light shield on that area as needed. effective pixels effective pixels horizontal shift register horizontal shift register kmpdc0423ea spectral transmittance characteristics of window material dark current vs. temperature kmpdb0303ea kmpdb0370ea wavelength (nm) (typ. ta=25 c) transmittance (%) 0 100 80 60 40 20 300 400 200 500 600 700 800 900 1000 temperature (c) dark current (e - /pixel/s) -50 -40 -30 -20 0 -10 10 20 30 0.01 1 0.1 10 100 1000 (typ.)
ccd area image sensor s12071 6 timing chart area scanning (tap a: low speed) parameter symbol min. typ. max. unit p1v, p2v, tg * 17 pulse width tpwv 60 75 - s rise and fall times tprv, tpfv 10 - - ns p1h, p2h, p3h, p4h * 17 pulse width tpwh 500 5000 - ns rise and fall times tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sga pulse width tpws 500 5000 - ns rise and fall times tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rga pulse width tpwr 10 500 - ns rise and fall times tprr, tpfr 5 - - ns tg ? p1h, p2h overlap time tovr 3 - - s * 17: symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. kmpdc0424ea kmpdc042 integration period (external shutter has to be open) p1v rga osa p2v, tg p1h, p2h p3h, p4h, sga readout period (external shutter has to be closed) enlarged view 4..1031 tpwv tov r tpwr d1 d2 d3 d4 d30 d31 d32 d5..d16, s1..s1024, d17..d29 p2v, tg p1h, p2h p3h, p4h, sga rga osa tpwh, tpws 123 rgb sgb 1032 4 (bevel) + 1024 + 4 (bevel) tpfv tpfr tprr tpfh, tpfs tprh, tprs tprh tprv tpfh
ccd area image sensor s12071 7 area scanning (tap b: high speed) parameter symbol min. typ. max. unit p1v, p2v, tg * 18 pulse width tpwv 60 75 - s rise and fall times tprv, tpfv 10 - - ns p1h, p2h, p3h, p4h * 18 pulse width tpwh 50 250 - ns rise and fall times tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sgb pulse width tpws 50 250 - ns rise and fall times tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rgb pulse width tpwr 5 25 - ns rise and fall times tprr, tpfr 5 - - ns tg ? p1h, p4h overlap time tovr 3 - - s * 18: symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. kmpdc0425ea kmpdc0425 integration period (external shutter has to be open) p1v rgb osb p2v, tg p1h, p4h p2h, p3h, sgb readout period (external shutter has to be closed) enlarged view 4..1031 tpwv tov r tpwr d1 d2 d3 d4 d30 d31 d32 d5..d16, s1..s1024, d17..d29 p2v, tg p1h, p4h p2h, p3h, sgb rgb osb tpwh, tpws 123 rga sga 1032 4 (bevel) + 1024 + 4 (bevel) tpfv tpfr tprr tpfh, tpfs tprh, tprs tprh tprv tpfh
ccd area image sensor s12071 8 dimensional outline (unit: mm) kmpda0296ec 5.0 0.05 0.5 +0.05 -0.03 48.26 0.3 52.5 0.53 60.5 0.2 64.5 0.3 0.5 0.07 3.0 0.3 2.54 0.13 1.0 0.1 2.0 0.05 0.6 0.1 * 3 5.0 0.5 11.91 1.2 12.41 1.41 20.0 0.2 43.8 0.15 50.3 0.5 50.8 0.51 40 21 120 1st pin indication mark photosensitive surface * 2 aluminum frame surface * 1 upper surface of window te-cooler * 1: never push the aluminum frame when inserting the sensor into the printed circuit board or the like. pressing the aluminum frame may cause the window material to peel off and air tightness to be compro- mised. when inserting the sensor, hold its sides. the sensor can also be inserted by pushing the screw fixing parts at the ends of the pack- age, but do not push with excessive force as they may break. * 2: there is a deflection in the photosensitive area [pv (peak to valley) value: approx. 80 to 160 m]. * 3: window thickness photosensitive area 24.576 window 32.8 0.13 29.3 0.13
ccd area image sensor s12071 9 pin connections pin no. symbol function remark (standard operation) 1 ss substrate 0 v 2 osa output transistor source-a r l =10 k 3 rda reset drain-a +15 v 4 oda output transistor drain-a +24 v 5 oga output gate-a +6 v 6 dd dump drain +12 v 7 rga reset gate-a +7 v/-7 v 8 sga summing gate-a +8 v/-7 v 9 p4h horizontal shift register clock-4 +8 v/-7 v 10 p3h horizontal shift register clock-3 +8 v/-7 v 11 p2h horizontal shift register clock-2 +8 v/-7 v 12 p1h horizontal shift register clock-1 +8 v/-7 v 13 sgb summing gate-b +8 v/-7 v 14 rgb reset gate-b +7 v/-7 v 15 dg dump gate -9 v 16 ogb output gate-b +6 v 17 odb output transistor drain-b +12 v 18 rdb reset drain-b +15 v 19 osb output transistor source-b r l =2.2 k 20 vret output amplifier return voltage +1 v 21 p- te-cooler (-) 22 p- te-cooler (-) 23 tg transfer gate +5 v/-9 v 24 p2v vertical shift register clock-2 +5 v/-9 v 25 p1v vertical shift register clock-1 +5 v/-9 v 26 nc no connection 27 nc no connection 28 igv test point (vertical input gate) -9 v 29 isv test point (vertical input source) connect to rd 30 th thermistor 31 th thermistor 32 ofd overflow drain +12 v 33 ofg overflow gate -9 v 34 nc no connection 35 nc no connection 36 nc no connection 37 nc no connection 38 ss substrate 0 v 39 p+ te-cooler (+) 40 p+ te-cooler (+)
ccd area image sensor s12071 10 parameter symbol condition speci cation unit internal resistance rint ta=25 c 0.65 0.13 maximum heat absorption of built-in te-cooler * 19 * 20 qmax 9.9 w * 19: this is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maxim um current is supplied to the sensor. * 20: heat absorption at tc=th tc: temperature on the cooling side of te-cooler th: temperature on the heat dissipating side of te-cooler. speci cations of built-in te-cooler (typ. vacuum condition) kmpdb0371ea voltage vs. current ccd temperature vs.current 0 1 2 3 voltage (v) ccd temperature (c) 4 6 5 -30 5 4 3 current (a) 12 0 -20 -10 0 10 20 30 (typ. th=25 c) 10 k 220 240 260 temperature (k) resistance 280 300 100 k 1 m (typ. ta=25 c) kmpdb0111jb specifications of built-in temperature sensor a thermistor chip is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relati on between the thermistor resistance and absolute temperature is expressed by the following equation. r t1 = r t2 exp b t1/t2 (1/t1 - 1/t2) r t1 : resistance at absolute temperature t1 [k] r t2 : resistance at absolute temperature t2 [k] b t1/t2 : b constant [k] the characteristics of the thermistor used are as follows. r 298 =10 k b 298/323 =3450 k to make the cooling side 0 c, the temperature on the heat dissipating side must be 30 c or less. as a guideline, use a heatsi nk whose thermal resistance is no more than 1 c/w.
cat. no. kmpd1138e03 dec. 2014 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of december, 2014. ccd area image sensor s12071 11 developmental multichannel detector head c12081/c12081-01 specifications parameter speci cation data rate tap a 100 khz tap b 2 mhz frame rate (max.) tap a 0.09 frames/s tap b 1.42 frames/s dynamic range tap a 30000 tap b 5000 cooling temperature * 21 -10 to +10 c supply voltage +5 v, 15 v a/d resolution 16-bit interface camra link base, usb 2.0 dimensions 90 100 79.6 mm weight 1.2 kg * 21: cooling temperature depends on the circulating water temperature (c12081) and the ambient temperature (c12081-01). precautions (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work- oor, work-desk and work-bench to allow static electricity to discharge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measur es stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature incline rate when cooling the ccd by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of tempe ra- ture change) for cooling or allowing the ccd to warm back is less than 5 k/minute. related information www.hamamatsu.com/sp/ssd/doc_en.html precautions notice image sensor/precautions

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