advance information 128k x 16 pseudo static ram die wcmc2016v1x weida semiconductor, inc. 38-xyxyx revised august 22, 2001 general physical specification for product parameters and availability, please refer to the wcmc2016v1x product datasheet available on the cypress semiconductor website (http://www.cypress.com). product thickness guide mfg part number: gc2016v5a substrate connection req.: ground die part number: wafer diameter [mm]: 200.00 die technology: powerchip 0.165 m die size [m]: 4010.74 x 1565.84 metal i: 420 nm tin/alcu step size [m]: 4095.44 x 1650.89 metal ii: 880 nm tin/ti/alcu/tin scribe size [m]: 84.70 x 84.94 metal iii: none pad count: 64 die passivation: 780nm p-si3n4 + polyimide pad size [m]: 73.6 x 73.6 code description min nom max unit xw die (25-30 mil) in wafer form. 617 685 754 m xw14 die (14 mil) in wafer form. 320 355 391 m xw11 die (11 mil) in wafer form. 252 280 308 m
advance information wcmc2016v1x 38-xyxyx page - 2 - of 5 bond pad locations 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 63 64
advance information wcmc2016v1x 38-xyxyx page - 3 - of 5 all units in m. (0,0) is the lower left hand corner of the die. bond pad coordinates and signal descriptions id pad name pad function description x coord [m] y coord [m] 1 a15 addr address 98.31 3950.48 2 test1 dnu do not use 98.31 3851.12 3 a14 addr address 98.31 3751.76 4 test2 dnu do not use 98.31 3652.40 5 a13 addr address 98.31 3553.04 6 a12 addr address 98.31 3453.68 7 a11 addr address 98.31 3354.32 8 a10 addr address 98.31 3254.96 9 a9 addr address 98.31 3155.60 10 a8 addr address 98.31 3056.24 11 test3 dnu do not use 98.31 2956.88 11 test4 dnu do not use 98.31 2857.52 12 we we write enable/select bar 98.31 2758.16 13 ce2 ce 2 chip enable/select 2 98.31 2658.80 14 vcc v cc power supply (core) 98.31 2559.44 15 vcc v cc power supply (core) 98.31 2460.08 16 vss gnd ground (also v ss ) 98.31 2261.36 17 vss gnd ground (also v ss ) 98.31 2201.66 18 ube bhe byte (high) enable/select bar 98.31 2261.36 19 lbe ble byte (low) enable/select bar 98.31 2162.00 20 test5 dnu do not use 98.31 2062.64 20 test6 dnu do not use 98.31 1963.28 20 test7 dnu do not use 98.31 1863.92 21 a17 addr address 98.31 1764.56 22 a7 addr address 98.31 1665.20 23 a6 addr address 98.31 1565.84 24 a5 addr address 98.31 1466.48 25 a4 addr address 98.31 1367.12 26 a3 addr address 98.31 1267.76 27 a2 addr address 98.31 1168.40 28 a1 addr address 98.31 1069.04 29 a16 addr address 1467.54 3909.67 30 vss gnd ground 1467.54 3810.31 31 vcc v cc power supply (core) 1467.54 3710.95 32 i/o15 dq 15 bi-directional data input/output 15 1467.54 3611.59 33 i/o7 dq 7 bi-directional data input/output 7 1467.54 3484.95 34 i/o14 dq 14 bi-directional data input/output 14 1467.54 3358.31 35 i/o6 dq 6 bi-directional data input/output 6 1467.54 3231.67
advance information wcmc2016v1x 38-xyxyx page - 4 - of 5 ? weida semiconductor, inc., 2003. the information contained herein is subject to change without notice. weida semiconductor as sumes no responsibility for the use of any circuitry other than circuitry embodied in a weida semiconductor product. nor does it conv ey or imply any license under patent or other rights. weid a semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of weida semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies weid a semiconductor against all charges. die ordering information this datasheet is prepared and approved by weida semiconductor, inc.. weida semidonductor, inc. reserve the right to change the specifications without notice. more battery life is a trademark, and mobl is a registered trademark, of cypress semiconductor. 36 i/o13 dq 13 bi-directional data input/output 13 1467.54 3105.04 37 i/o5 dq 5 bi-directional data input/output 5 1467.54 2978.4 38 i/o12 dq 12 bi-directional data input/output 12 1467.54 2851.76 39 i/o4 dq 4 bi-directional data input/output 4 1467.54 2725.12 40 vss gnd ground (also v ss ) 1467.54 2598.20 41 vss gnd ground (also v ss ) 1467.54 2498.84 42 vss gnd ground (also v ss ) 1467.54 2399.48 43 vcc vcc power supply (core) 1467.54 2300.12 44 vcc vcc power supply (core) 1467.54 2200.76 45 vcc vcc power supply (core) 1467.54 2101.40 46 i/o11 dq 11 bi-directional data input/output 11 1467.54 2002.04 47 i/o3 dq 3 bi-directional data input/output 3 1467.54 1875.40 48 i/o10 dq 10 bi-directional data input/output 10 1467.54 1748.76 49 i/o2 dq 2 bi-directional data input/output 2 1467.54 1622.13 50 i/o9 dq 9 bi-directional data input/output 9 1467.54 1495.49 51 i/o1 dq 1 bi-directional data input/output 1 1467.54 1368.85 52 i/o8 dq 8 bi-directional data input/output 8 1467.54 1242.21 53 i/o0 dq 0 bi-directional data input/output 0 1467.54 1115.57 54 test8 dnu do not use 1467.54 988.61 55 test9 dnu do not use 1467.54 843.80 58 oe# oe output enable 1467.54 744.44 59 vss gnd ground 1467.54 645.08 60 vcc vcc power supply (core) 1467.54 545.72 61 test10 dnu do not use 1467.54 446.36 62 a0 addr address 1467.54 347.00 silicon type ordering code wafer code wafer/die type operating range kgd2 WCMC2016V1X-2XWI xw die (25-30 mil) in wafer form. industrial wcmc2016v1x-2xw14i xw14 die (14 mil) in wafer form. wcmc2016v1x-2xw11i xw11 die (11 mil) in wafer form. id pad name pad function description x coord [m] y coord [m]
advance information wcmc2016v1x 38-xyxyx page - 5 - of 5 revision history document title: wcmc2016v1x mobl3 ? 2 mb (128k x 16) pseudo static ram di document number: 38-xyxyx rev ecn issue date orig. change description of change ** mpr new datasheet
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