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mosfet metaloxidesemiconductorfieldeffecttransistor optimos tm optimos tm 5power-mosfet,25v bsz014ne2ls5if datasheet rev.2.1 final powermanagement&multimarket
2 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet tsdson-8fl 1description features ?optimizedforsynchronousrectification ?monolithicintegratedschottkylikediode ?verylowon-resistance r ds(on) @ v gs =4.5v ?excellentgatechargex r ds(on) product(fom) ?100%avalanchetested ?n-channel ?qualifiedaccordingtojedec 1) fortargetapplications ?pb-freeleadplating;rohscompliant ?halogen-freeaccordingtoiec61249-2-21 table1keyperformanceparameters parameter value unit v ds 25 v r ds(on),max 1.45 m w i d 40 a q oss 26 nc q g (0v..4.5v) 11 nc type/orderingcode package marking relatedlinks bsz014ne2ls5if pg-tsdson-8 fl 14ne2l5 - 1) j-std20 and jesd22 (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
3 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
4 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - - - - - - - 40 40 40 40 31 a v gs =10v, t c =25c v gs =10v, t c =100c v gs =4.5v, t c =25c v gs =4.5v, t c =100c v gs =10v, t a =25c, r thja =60k/w 1) pulsed drain current 2) i d,pulse - - 160 a t c =25c avalanche current, single pulse 3) i as - - 20 a t c =25c avalanche energy, single pulse e as - - 80 mj i d =20a, r gs =25 w gate source voltage v gs -16 - 16 v - power dissipation p tot - - 69 2.1 - - w t c =25c t a =25c, r thja =60k/w 1) operating and storage temperature t j , t stg -55 - 150 c iec climatic category; din iec 68-1: 55/150/56 3thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 1.8 k/w - device on pcb, 6 cm 2 cooling area 1) r thja - - 60 k/w - 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 2) >see figure 3 for more detailed information 3) see figure 13 for more detailed information (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
5 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 25 - - v v gs =0v, i d =10ma breakdown voltage temperature coefficient d v (br)dss /d t j - 15 - mv/k i d =10ma,referencedto25c gate threshold voltage v gs(th) 1 - 2 v v ds = v gs , i d =250a zero gate voltage drain current i dss - - - 1 0.5 - ma v ds =20v, v gs =0v, t j =25c v ds =20v, v gs =0v, t j =125c gate-source leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.6 1.25 2.1 1.45 m w v gs =4.5v, i d =20a v gs =10v, i d =20a gate resistance r g - 0.8 1.3 w - transconductance g fs 70 140 - s | v ds |>2| i d | r ds(on)max , i d =20a table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance 1) c iss - 1600 2300 pf v gs =0v, v ds =12v, f =1mhz output capacitance 1) c oss - 1400 1900 pf v gs =0v, v ds =12v, f =1mhz reverse transfer capacitance c rss - 70 - pf v gs =0v, v ds =12v, f =1mhz turn-on delay time t d(on) - 5 - ns v dd =12v, v gs =10v, i d =10a, r g,ext =1.6 w rise time t r - 3 - ns v dd =12v, v gs =10v, i d =10a, r g,ext =1.6 w turn-off delay time t d(off) - 19 - ns v dd =12v, v gs =10v, i d =10a, r g,ext =1.6 w fall time t f - 2 - ns v dd =12v, v gs =10v, i d =10a, r g,ext =1.6 w 1) defined by design. not subject to production test. (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
6 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet table6gatechargecharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 3.7 - nc v dd =12v, i d =30a, v gs =0to4.5v gate charge at threshold q g(th) - 2.5 - nc v dd =12v, i d =30a, v gs =0to4.5v gate to drain charge q gd - 2.5 - nc v dd =12v, i d =30a, v gs =0to4.5v switching charge q sw - 3.8 - nc v dd =12v, i d =30a, v gs =0to4.5v gate charge total q g - 11 16 nc v dd =12v, i d =30a, v gs =0to4.5v gate plateau voltage v plateau - 2.4 - v v dd =12v, i d =30a, v gs =0to4.5v gate charge total q g - 23 33 nc v dd =12v, i d =30a, v gs =0to10v gate charge total, sync. fet q g(sync) - 9.4 - nc v ds =0.1v, v gs =0to4.5v output charge q oss - 26 - nc v dd =12v, v gs =0v table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continuous forward current i s - - 40 a t c =25c diode pulse current i s,pulse - - 160 a t c =25c diode forward voltage v sd - 0.48 0.6 v v gs =0v, i f =11a, t j =25c reverse recovery charge q rr - 5 - nc v r =15v, i f =11a,d i f /d t =400a/s 1) see 2 gate charge waveforms 2 for parameter definition (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
7 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 40 80 120 160 0 10 20 30 40 50 60 70 80 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 40 80 120 160 0 10 20 30 40 50 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
8 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 1 2 3 0 100 200 300 3.5 v 4 v 4.5 v 5 v 10 v 3.2 v 3 v 2.8 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.2 v 3.5 v 4 v 4.5 v 5 v 7 v 8 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 1 2 3 4 5 0 50 100 150 200 250 300 150 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 40 80 120 160 0 80 160 240 320 400 g fs =f( i d ); t j =25c (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
9 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 typ r ds(on) =f( t j ); i d =20a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 10 ma v gs(th) =f( t j ); v gs = v ds ; i d =10ma diagram11:typ.capacitances v ds [v] c [pf] 0 5 10 15 20 25 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.4 0.8 1.2 10 -1 10 0 10 1 10 2 10 3 -55 c 25 c 125 c 150 c i f =f( v sd );parameter: t j (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
10 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet diagram13:avalanchecharacteristics t av [s] i av [a] 10 0 10 1 10 2 10 3 10 0 10 1 10 2 25 c 100 c 125 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 0 2 4 6 8 10 12 20 v 12 v 5 v v gs =f( q gate ); i d =30apulsed;parameter: v dd diagram15:typ.drain-sourceleakagecurrent v sd [v] i dss [a] 0 5 10 15 20 10 -6 10 -5 10 -4 10 -3 10 -2 125 c 100 c 75 c 25 c i dss =f( v ds ); v gs =0v;parameter: t j (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms
11 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet 6packageoutlines figure1outlinepg-tsdson-8fl,dimensionsinmm/inches (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms
12 optimos tm 5power-mosfet ,25v bsz014ne2ls5if rev.2.1,2015-04-27 final data sheet revisionhistory bsz014ne2ls5if revision:2015-04-27,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 2015-04-27 rev. 2.0 welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms

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