dm c1028ufdb document number: ds 37634 rev. 4 - 2 1 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb complementary pair enhancement mode mosfet product summary device b v dss r ds(on) max i d max t a = +25c q1 n - channel 12 v 25 m ? @ v gs = 4.5 v 6.0a 3 0 m ? @ v gs = 3.3 v 5.5a 32 m ? @ v gs = 2 .5v 5.3a q2 p - channel - 20 v 80 m ? @ v gs = - 4.5 v - 3.4a 9 0 m ? @ v gs = - 3.3 v - 3.2a 100 m ? @ v gs = - 2 .5 v - 3.0a description this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications optimized for point of load (p o l) synchronous buck converter that steps down from 3.3v to 1v for core voltage supply to asics . target applications are ethernet network controllers used in: ? routers, switchers, network interface controllers (nics) ? digital subscriber line (dsl) ? set - top boxes (stbs) features ? low on - resistance ? low input capacitance ? low profile, 0. 6 mm max height ? esd hbm protected up to 1.5k v, mm protected up to 150v . ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: u - dfn2020 - 6 (type b) ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish nipdau over copper l eadframe. solderable per mil - std - 202, method 208 ? terminals connections: see diagram below ? weight: 0.0065 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmc1 028 ufdb - 7 u - dfn2020 - 6 (type b) 3 , 000/tape & reel dmc1 028 ufdb - 13 u - dfn2020 - 6 (type b) 10 , 000/tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com . marking information date code key year 2015 2016 2017 2018 201 9 20 20 20 21 code c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d bottom view internal schematic d 8 = product type marking code ym = date code marking y = year (ex: c = 20 1 5 ) m = month (ex: 9 = september) s 1 g 1 d2 s2 g2 d1 d2 pin1 n - channel mosfet p - channel mosfet d1 d 8 y m u - dfn2020 - 6 (type b) e4 d2 s2 g2 g ate protection diode esd protected d1 s1 g1 g ate protection diode
dm c1028ufdb document number: ds 37634 rev. 4 - 2 2 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol q1 n - channel q2 p - channel units drain - source voltage v dss 12 - 20 v gate - source voltage v gss 8 8 v continuous drain current (note 5 ) v gs = 4.5 v steady state t a = + 25 c t a = + 70 c i d 6.0 4.8 - 3.4 - 2.7 a t < 5 s t a = + 25 c t a = + 70 c i d 7.1 5.7 - 4.0 - 3.2 a maximum continuous body diode f orward current (note 5 ) i s 1.4 - 1.4 a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i dm 40 - 20 a avalanche current l = 0.1mh i as 12 - 12 a avalanche energy l = 0.1mh e as 8.4 7.5 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) steady state p d 1.36 w t < 5 s 1.89 thermal resistance, junction to ambient (note 5 ) steady state r ja 92 c/w t < 5 s 66 thermal resistance, junction to case (note 5 ) r j c 1 9 operating and storage temperature range t j, t stg - 55 to + 150 c note: 5. device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided. electrical characteristics q1 n - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 12 - - v v gs = 0v, i d = 250a j = + 25c i dss - - 1.0 ds = 12 v, v gs = 0v gate - source leakage i gss - - 10 a gs = 8 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) 0.4 - 1 v v ds = v gs , i d = 250 a ds(on) - 17 2 5 m ? gs = 4.5 v, i d = 5.2 a - 19 30 v gs = 3.3 v, i d = 5. 0 a - 21 32 v gs = 2 .5 v, i d = 4.8 a - 30 40 v gs = 1.8 v, i d = 2.5 a diode forward voltage v sd - 0. 7 1. 2 v v gs = 0 v, i s = 1 a dynamic characteristics (note 7 ) input capacitance c iss - 787 - pf v ds = 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 203 - pf reverse transfer capacitance c rss - 177 - pf gate resistance r g - 4.8 - ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 3.3 v ) q g - 7.9 - nc v ds = 6 v, i d = 6.8 a total gate charge ( v gs = 4.5 v ) - 10.5 - nc total gate charge ( v gs = 8 v ) - 18.5 - nc gate - source charge q gs - 1.2 - nc gate - drain charge q gd - 2.9 - nc turn - on delay time t d( on ) - 4.6 - ns v dd = 6 v, v gs = 4.5 v, r l = 1.1 , r g = 1 r - 9.4 - ns turn - off delay time t d( off ) - 15.7 - ns turn - off fall time t f - 3.7 - ns body diode reverse recovery time t rr - 12.0 - n s i s = 5.4a , di /d t = 1 00a/ rr - 1.8 - n c i s = 5.4a , di /d t = 1 00a/
dm c1028ufdb document number: ds 37634 rev. 4 - 2 3 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb electrical characteristics q2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss - 20 - - v v gs = 0v, i d = - 250a j = + 25c i dss - - - 1.0 a ds = - 20 v, v gs = 0v gate - source leakage i gss - - 10 a gs = 8 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) - 0.4 - - 1 v v ds = v gs , i d = - 250 a ds(on) - 55 80 m ? gs = - 4.5 v, i d = - 3. 8 a - 63 90 v gs = - 3.3 v, i d = - 3. 5 a - 70 100 v gs = - 2 .5 v, i d = - 3.3 a - 88 140 v gs = - 1.8 v, i d = - 1.0 a - 110 2 1 0 v gs = - 1 .5 v, i d = - 0.5 a diode forward voltage v sd - - 0. 7 - 1. 2 v v gs = 0 v, i s = - 1 a dynamic characteristics (note 7 ) input capacitance c iss - 576 - pf v ds = - 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 87 - pf reverse transfer capacitance c rss - 71 - pf gate resistance r g - 15 - ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 3.3 v ) q g - 5.2 - nc v ds = - 10 v, i d = - 4.9 a total gate charge ( v gs = - 4.5 v ) - 6.7 - nc total gate charge ( v gs = - 8 v ) - 11.5 - nc gate - source charge q gs - 1.0 - nc gate - drain charge q gd - 2.0 - nc turn - on delay time t d( on ) - 3.5 - ns v dd = - 10 v, v gs = - 4.5 v, r l = 2.6 , r g = 1 r - 3.6 - ns turn - off delay time t d( off ) - 20.8 - ns turn - off fall time t f - 12.7 - ns body diode reverse recovery time t rr - 13.1 - n s i s = - 3.9a , di /d t = 1 00a/ rr - 3.9 - n c i s = - 3.9a , di /d t = 1 00a/ notes: 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing.
dm c1028ufdb document number: ds 37634 rev. 4 - 2 4 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb typical characteristics - n - channel 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1 typical output characteristic v gs = 1.1v v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 2.0v v gs = 3.0v v gs = 3.5v v gs = 4.5v v gs = 2.5v 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 2 typical transfer characteristic v ds = 5v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 1 2 3 4 5 6 7 8 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4 typical transfer characteristic i d = 2.5a i d = 4.8a i d = 5.2a 0.005 0.01 0.015 0.02 0.025 0.03 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5 typical on - resistance vs drain current and temperature v gs = 4.5v t a = 85 o c t a = 150 o c t a = 125 o c t a = 25 o c t a = - 55 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( normalized ) t j , junction temperature ( gs = 4.5v, i d = 10a v gs = 1.8v, i d = 3a 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 0 2 4 6 8 10 12 14 16 18 20 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage v = 1.8v gs v = 2.5v gs v = 3.3v gs v = 4.5v gs
dm c1028ufdb document number: ds 37634 rev. 4 - 2 5 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb typical characteristics - n - channel ( c ont inued ) 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( ? j , junction temperature ( gs = 1.8v, i d = 3a v gs = 4.5v, i d = 10a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9 diode forward voltage vs. current t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c v gs = 0v 10 100 1000 10000 0 2 4 6 8 10 12 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10 typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 0 2 4 6 8 10 12 14 16 18 20 v gs (v) q g (nc) fiure 11 gate charge v ds = 6v, i d = 6.8a 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12 soa, safe operation area t j(max) =150 a =25 gs =4.5v single pulse dut on 1*mrp board r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm c1028ufdb document number: ds 37634 rev. 4 - 2 6 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb typical characteristics - p - channel 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 1 2 3 i d , drain current (a) v ds , drain - source voltage (v) figure 13 typical output characteristic v gs = - 4.5v v gs = - 1.2v v gs = - 1.5v v gs = - 1.8v v gs = - 2.0v v gs = - 2.5v v gs = - 3.0v v gs = - 3.5v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 14 typical transfer characteristic v ds = - 5v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 16 typical transfer characteristic i d = - 1.0a i d = - 3.3a i d = - 3.8a 0.02 0.04 0.06 0.08 0.1 0.12 1 3 5 7 9 11 13 15 17 19 21 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 17 typical on - resistance vs drain current and temperature v gs = - 4.5v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 1.8v, i d = - 1.0a v gs = - 4.5v, i d = - 5.0a 0 0.05 0.1 0.15 0.2 0.25 0.3 1 3 5 7 9 11 13 15 17 19 21 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 15 typical on-resistance vs. drain current and gate voltage v = -1.5v gs v = -1.8v gs v = -2.5v gs v = -4.5v gs v = -3.3v gs
dm c1028ufdb document number: ds 37634 rev. 4 - 2 7 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb typical characteristics - p - channel (continued) 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( ? j , junction temperature ( gs = - 4.5v, i d = - 5.0a v gs = - 1.8v, i d = - 1.0a 0 0.2 0.4 0.6 0.8 1 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t j , junction temperature ( d = - 250 a i d = - 1ma 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 21 diode forward voltage vs. current t a = 150 o c t a = 125 o c t a = - 55 o c t a = 25 o c t a = 85 o c v gs = 0v 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c t , junction capacitance (pf) v ds , drain - source voltage ( v) figure 22 typical junction capacitance f=1mhz c iss c oss c rss
dm c1028ufdb document number: ds 37634 rev. 4 - 2 8 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb typical characteristics - p - channel (cont. ) 0 2 4 6 8 0 2 4 6 8 10 12 v gs (v) q g (nc) figure 23 gate charge v ds = - 10v, i d = - 4.9a 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 24 soa, safe operation area t j(max) =150 a =25 gs =4.5v single pulse dut on 1*mrp board r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 25 transient thermal resistance r ja (t)=r(t) * r ja r ja =166
dm c1028ufdb document number: ds 37634 rev. 4 - 2 9 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb typical application circuit dmc1028ufdb is designed for point - of - load (pol) converter that is stepping down from a nominal 3.3v to 1v with a load current up to 3a. this is implemented with a separate asic that is pwm signaling the complementary mosfets to act as a synchronous buck converter. the control switch (q2) is implemented with p - channel mosfet s to avoid needing a charge pump and with the 3.3v to 1v step down , which has a duty cycle of 33% . this m ean s that for 67% of the cycle , the synchronous switch (q1) is on and efficiency is dominated by the conduction losses ; hence, the need for low r ds (on) n - channel mosfet s . whereas for the control switch (q2) , the gate charge needs to be minimized as the switching losses become significant . package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. u - dfn2020 - 6 type b dim min max typ a 0.545 0.605 0.575 a1 0 0.05 0.02 a3 ? ? ? ? b 0.20 0.30 0.25 d 1.95 2.075 2.00 d ? ? ? ? d2 0.50 0.70 0.60 e ? ? ? ? e 1.95 2.075 2.00 e2 0.90 1.10 1.00 f ? ? ? ? l 0.25 0.35 0.30 z ? ? ? ? all dimensions in mm seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d
dm c1028ufdb document number: ds 37634 rev. 4 - 2 10 of 10 www.diodes.com may 2015 ? diodes incorporated dm c1028ufdb suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. t his document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products ar e specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com dimensions value (in mm) z 1.67 g 0.20 g1 0.40 x1 1.0 x2 0.45 y 0.37 y1 0.70 c 0.65 g g y c z y1 x2 x1 g1
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