mpq3906 pnp silicon quad transistor description: the central semiconductor mpq3906 type is comprised of four independent pnp silicon transistors mounted in a 14-pin dip, designed for general purpose amplifier and switching applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5.0 v continuous collector current i c 200 ma power dissipation (per transistor) p d 500 mw power dissipation (total package) p d 2.0 w operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics per transistor: (t a =25c) symbol test conditions min typ max units i cbo v cb =30v 50 na i ebo v eb =4.0v 50 na bv cbo i c =10a 40 v bv ceo i c =1.0ma 40 v bv ebo i e =10a 5.0 v v ce(sat) i c =10ma, i b =1.0ma 0.25 v v be(sat) i c =10ma, i b =1.0ma 0.85 v h fe v ce =1.0v, i c =0.1ma 40 h fe v ce =1.0v, i c =1.0ma 60 h fe v ce =1.0v, i c =10ma 75 f t v ce =20v, i c =10ma, f=100mhz 200 mhz c ob v cb =5.0v, i e =0, f=140khz 4.5 pf c ib v be =0.5v, i c =0, f=140khz 10 pf t on v be =0.5v, i c =10ma, i b1 =1.0ma 43 ns t off i c =10ma, i b1 =i b2 =1.0ma 155 ns to-116 case r1 (4-december 2012) www.centralsemi.com
mpq3906 pnp silicon quad transistor to-116 case - mechanical outline lead code: 1) collector q1 8) collector q3 2) base q1 9) base q3 3) emitter q1 10) emitter q3 4) no connection 11) no connection 5) emitter q2 12) emitter q4 6) base q2 13) base q4 7) collector q2 14) collector q4 marking: full part number pin configuration www.centralsemi.com r1 (4-december 2012)
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