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vishay siliconix SIA533EDJ new product document number: 65706 s10-0214-rev. a, 25-jan-10 www.vishay.com 1 n- and p-channel 12-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ? typical esd protection: n-channel 1500 v p-channel 1000 v ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices ? dc/dc converters product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) n-channel 12 0.034 at v gs = 4.5 v 4.5 a 5.6 nc 0.040 at v gs = 2.5 v 4.5 a 0.050 at v gs = 1.8 v 4.5 a 0.070 at v gs = 1.5 v 4.5 a p-channel - 12 0.059 at v gs = - 4.5 v - 4.5 a 7.8 nc 0.081at v gs = - 2.5 v - 4.5 a 0.115 at v gs = - 1.8 v - 4.5 a 0.215 at v gs = - 1.5 v - 1.5 orderin g information: SIA533EDJ-t1-ge3 (lead (p b )-free and halogen-free) markin g code x x x e h x lot tracea b ility and date code part # code s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak ? sc-70-6 dual d 1 d 2 p-channel mosfet n -channel mosfet d 2 s 2 g 2 s 1 d 1 g 1 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit drain-source voltage v ds 12 - 12 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d 4.5 a - 4.5 a a t c = 70 c 4.5 a - 4.5 a t a = 25 c 4.5 a, b, c - 4.5 a, b, c t a = 70 c 4.5 a, b, c - 3.7 b, c pulsed drain current i dm 20 - 15 source drain current diode current t c = 25 c i s 4.5 a - 4.5 a t a = 25 c 1.6 b, c - 1.6 b, c maximum power dissipation t c = 25 c p d 7.8 7.8 w t c = 70 c 55 t a = 25 c 1.9 b, c 1.9 b, c t a = 70 c 1.2 b, c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260
www.vishay.com 2 document number: 65706 s10-0214-rev. a, 25-jan-10 vishay siliconix SIA533EDJ new product notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the expos ed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a solder ing iron is not recommended for leadless components. f. maximum under steady state conditions is 110 c/w. thermal resistance ratings parameter symbol n-channel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, f t 5 s r thja 52 65 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16 12.5 16 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 12 v v gs = 0 v, i d = - 250 a p-ch - 12 v ds temperature coefficient v ds /t j i d = 250 a n-ch 19 mv/c i d = - 250 a p-ch - 5.7 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a n-ch - 2.7 i d = - 250 a p-ch 1.7 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 0.4 1.0 v v ds = v gs , i d = - 250 a p-ch - 0.4 - 1.0 gate-body leakage i gss v ds = 0 v, v gs = 4.5 v n-ch 0.5 a p-ch 0.5 v ds = 0 v, v gs = 8 v n-ch 5 p-ch 5 zero gate voltage drain current i dss v ds = 12 v, v gs = 0 v n-ch 1 v ds = - 12 v, v gs = 0 v p-ch - 1 v ds = 12 v, v gs = 0 v, t j = 55 c n-ch 10 v ds = - 12 v, v gs = 0 v, t j = 55 c p-ch - 10 on-state drain current b i d(on) v ds 5 v, v gs = 4.5 v n-ch 10 a v ds - 5 v, v gs = - 4.5 v p-ch - 10 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 4.6 a n-ch 0.028 0.034 v gs = - 4.5 v, i d = - 3.6 a p-ch 0.048 0.059 v gs = 2.5 v, i d = 4.2 a n-ch 0.032 0.040 v gs = - 2.5 v, i d = - 3.1 a p-ch 0.066 0.081 v gs = 1.8 v, i d = 3.8 a n-ch 0.038 0.050 v gs = - 1.8 v, i d = - 2.6 a p-ch 0.093 0.115 v gs = 1.5 v, i d = 1.5 a n-ch 0.045 0.070 v gs = - 1.5 v, i d = - 0.5 a p-ch 0.120 0.215 forward transconductance b g fs v ds = 6 v, i d = 4.6 a n-ch 21 s v ds = - 6 v, i d = - 3.6 a p-ch 11 input capacitance c iss n-channel v ds = 6 v, v gs = 0 v, f = 1 mhz p-channel v ds = - 6 v, v gs = 0 v, f = 1 mhz n-ch 420 pf p-ch 545 output capacitance c oss n-ch 100 p-ch 192 reverse transfer capacitance c rss n-ch 62 p-ch 175
document number: 65706 s10-0214-rev. a, 25-jan-10 www.vishay.com 3 vishay siliconix SIA533EDJ new product notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. parameter symbol test conditions min. typ. max. unit dynamic a total gate charge q g v ds = 10 v, v gs = 10 v, i d = 5.9 a n-ch 10 15 nc v ds = - 10 v, v gs = - 10 v, i d = - 4.7 a p-ch 13 20 n-channel v ds = 10 v, v gs = 4.5 v, i d = 5.9 a p-channel v ds = - 10 v, v gs = - 4.5 v, i d = - 4.7 a n-ch 5.6 8.5 p-ch 7.8 12 gate-source charge q gs n-ch 0.7 p-ch 1.3 gate-drain charge q gd n-ch 0.85 p-ch 2.3 gate resistance r g f = 1 mhz n-ch 0.7 3.5 7 p-ch 1.4 7 14 specifications t j = 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 6 v, r l = 1.3 i d ? 4.8 a, v gen = 4.5 v, r g = 1 p-channel v dd = - 6 v, r l = 1.6 i d ? - 3.7 a, v gen = - 4.5 v, r g = 1 n-ch 10 15 ns p-ch 15 25 rise time t r n-ch 10 15 p-ch 15 25 turn-off delay time t d(off) n-ch 20 30 p-ch 25 40 fall time t f n-ch 10 15 p-ch 10 15 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 6 v, r l = 1.3 i d ? 4.8 a, v gen = 8 v, r g = 1 p-channel v dd = - 6 v, r l = 1.6 i d ? - 3.7 a, v gen = - 8 v, r g = 1 n-ch 5 10 p-ch 5 10 rise time t r n-ch 10 15 p-ch 10 15 turn-off delay time t d(off) n-ch 20 30 p-ch 25 40 fall time t f n-ch 10 15 p-ch 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c n-ch 4.5 a p-ch - 4.5 pulse diode forward current a i sm n-ch 20 p-ch - 15 body diode voltage v sd i s = 4.8 a, v gs = 0 v n-ch 0.85 1.2 v i s = - 3.7 a, v gs = 0 v p-ch - 0.87 - 1.2 body diode reverse recovery time t rr n-channel i f = 4.4 a, di/dt = 100 a/s, t j = 25 c p-channel i f = - 3.7 a, di/dt = - 100 a/s, t j = 25 c n-ch 10 20 ns p-ch 25 50 body diode reverse recovery charge q rr n-ch 5 10 nc p-ch 10 20 reverse recovery fall time t a n-ch 5.5 ns p-ch 17 reverse recovery rise time t b n-ch 4.5 p-ch 8
www.vishay.com 4 document number: 65706 s10-0214-rev. a, 25-jan-10 vishay siliconix SIA533EDJ new product n-channel typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current and gate voltage v gs - gate-to-so u rce v oltage ( v ) - gate c u rrent (ma) i g 0 0.5 1.0 1.5 2.0 2.5 0 3 6 9 12 15 t j = 25 c 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 5 v thr u 2 v v gs = 1.5 v v gs = 1 v 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.0 8 04 8 12 16 20 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =2.5 v v gs =4.5 v v gs =1. 8v v gs =1.5 v gate current vs. gate-source voltage transfer characteristics capacitance - gate c u rrent (a) i gss v gs - gate-to-so u rce v oltage ( v ) 0 3 6 9 12 15 10 -10 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 150 c t j = 25 c 0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 1.5 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = - 55 c t c = 125 c c rss 0 200 400 600 8 00 036912 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss
document number: 65706 s10-0214-rev. a, 25-jan-10 www.vishay.com 5 vishay siliconix SIA533EDJ new product n-channel typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage threshold voltage 0 2 4 6 8 0246 8 10 i d =5.9a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =9.6 v v ds =6 v v ds =3 v 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s t j = 25 c 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d =250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) r ds(on) - on-resistance v gs =1.5 v ,i d =1.5a v gs =1. 8v ,2.5 v , 4.5 v , i d =4.6a 0.00 0.02 0.04 0.06 0.0 8 012345 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) i d = 4.6 a, 125 c i d = 1.5 a, 125 c i d = 4.6 a, 25 c i d = 1.5 a, 25 c 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0
www.vishay.com 6 document number: 65706 s10-0214-rev. a, 25-jan-10 vishay siliconix SIA533EDJ new product n-channel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse 100 ms dc limited b yr ds(on) * b v dss limited 1ms 100 s 1 s, 10 s 10 ms current derating* t c - case temperat u re (c) i d - drain c u rrent (a) 0 3 6 9 12 15 0 25 50 75 100 125 150 package limited power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
document number: 65706 s10-0214-rev. a, 25-jan-10 www.vishay.com 7 vishay siliconix SIA533EDJ new product n-channel typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 110c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized e f f ective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
www.vishay.com 8 document number: 65706 s10-0214-rev. a, 25-jan-10 vishay siliconix SIA533EDJ new product p-channel typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current and gate voltage 0.0 0.0 4.0 8.0 12.0 16.0 0.5 1.0 1.5 2.0 2.5 3.0 i g - gate current (ma) v gs - gate-to-source voltage (v) t j = 25 c 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 1 v v gs = 1.5 v v gs = 2 v v gs = 5 v thr u 2 v 0.00 03691215 0.08 0.04 0.12 0.16 0.20 i d - drain current (a) r ds(on) - on-resistance ( ) v gs = 1. 8 v v gs = 4.5 v v gs = 2.5 v v gs = 1.5 v gate current vs. gate-source voltage transfer characteristics capacitance 0.0 4.0 8.0 12.0 16.0 i g - gate current (ma) v gs - gate-to-source voltage (v) 10 -10 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t j = 25 c t j = 150 c 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = - 55 c t c = 125 c 0 036912 200 400 600 800 1000 v ds - drain-to-source voltage (v) c - capacitance (pf) c oss c rss c iss
document number: 65706 s10-0214-rev. a, 25-jan-10 www.vishay.com 9 vishay siliconix SIA533EDJ new product p-channel typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage threshold voltage 0 2 4 6 8 0 3 6 9 12 15 i d = 4.7 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =9.6 v v ds =6 v v ds =3 v 0.1 1 10 100 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s t j - junction temperature (c) v gs(th) (v) 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) - 50 - 25 25 75 125 0 50 100 150 1.1 1.3 1.2 0.7 0.9 1.0 0.8 1.4 1.5 r ds(on) - on-resistance (normalized) t j - junction temperature (c) v gs = 2.5 v , 4.5 v , i d = 3.6 a v gs = 1.5 v , 1. 8 v i d = 1 a 0.00 0.0 1.0 2.0 4.0 5.0 3.0 0.16 0.12 0.08 0.04 0.20 v gs - gate-to-source voltage (v) r ds(on) - on-resistance ( ) i d = 1 a, 25 c i d = 1 a, 125 c i d = 3.6 a, 125 c i d = 3.6 a, 25 c 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0
www.vishay.com 10 document number: 65706 s10-0214-rev. a, 25-jan-10 vishay siliconix SIA533EDJ new product p-channel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s,10s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d current derating* i d - drain current (a) 0 25 50 75 100 125 150 12 10 8 6 2 0 4 t c - case temperat u re (c) package limited power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
document number: 65706 s10-0214-rev. a, 25-jan-10 www.vishay.com 11 vishay siliconix SIA533EDJ new product p-channel typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65706 . normalized thermal transient impedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 110 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized e f f ective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix www.vishay.com document number: 70487 1 revision: 18-oct-13 application note recommended pad layout for powerpak ? sc70-6l dual 1 2.500 (0.09 8 ) 0.350 (0.014) 0.275 (0.011) 0.613 (0.024) 0.300 (0.012) 0.325 (0.013) 0.950 (0.037) 0.475 (0.019) 2.500 (0.09 8 ) 0.275 (0.011) 0.160 (0.006) 1.600 (0.063) dimensions in mm (inches) 0.650 (0.026) return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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