s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) typ 24v 26a 4.9 @ vgs=6v 4.3 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor ver 1.2 www.samhop.com.tw mar,24,2014 1 details are subject to change without notice. tson 3.3 x 3.3 pin 1 SP8010E green product symbol v ds v gs i dm a p d c -55 to 150 i d units parameter 24 26 78 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed a maximum power dissipation operating junction and storage temperature range t j , t stg 75 c/w thermal resistance, junction-to-ambient r ja t a =25 c w 1.67 c 4 3 2 1 d d d d g s s 5 6 7 8 s esd protected. ac a 7.0 @ vgs=4v
symbol min typ max units bv dss 24 v 10 i gss 10 ua v gs(th) v 4.3 q g 118 nc 304 1390 970 t d(on) 27 ns t r ns t d(off) ns t f ns switching characteristics v dd =12v i d =13a v gs =10v r gen = 4.7 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =13a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =0.3ma v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =-12v , i d =10ma on characteristics v gs =6v , i d =13a 5.4 4.9 6.6 m ohm b SP8010E ver 1.2 www.samhop.com.tw mar,24,2014 2 v sd nc q gs nc q gd 6.7 5.6 gate-drain charge gate-source charge diode forward voltage v ds =20v,i d =26a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =26a 0.85 1.3 v notes v ds =20v,i d =26a,v gs =10v 1.0 1.4 2.0 v gs =0v , i d =10ma v bv dsx 10 a.surface mounted on fr4 board of 1 inch 2 , 1oz. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. v gs =4v , i d =13a 7.0 9.5 m ohm
SP8010E ver 1.2 www.samhop.com.tw mar,24,2014 3 drain current i d (a) drain-source voltage v ds (v) i d - v ds gate-source voltage v gs (v) drain-source on-resistance r ds(on) (m ) 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =2. 4v 30 24 18 12 6 0 0 1 2 3 4 5 -55 c tj=100 c 25 c 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 i d = 26 a 13 a 110 100 1 10 100 0.1 v g s =6v v g s = 10v drain current i d (a) drain-source voltage v ds (v) i d - v ds drain current i d (a) drain-source voltage v ds (v) i d - v gs v ds - v gs gate-source voltage v gs (v) drain current i d (a) r ds(on) - i d 3 3 .1 3 .2 3.3 4 .0 3 .5 10 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 v gs =2 .5v 3.3 3 .4 3 .5 4.5 1 0 2. 9 3 .2 3. 7 12 10 8 6 4 2 0 -80 80 40 -40 0 120 160 ambient temperature ta ( c ) r ds(on) (m ) v gs =10v v gs =6v drain-source on resistance r ds(on) - t a i d = 6.5, 13, 26a 6. 5a 4 .0 3 .0 2.5 2 .8 2 .7 2.6 3 .1 2. 9 2.8 2.7 2. 6 v g s = 4v i d = 6.5, 13, 26a v gs =4v i d = 6.5, 13, 26a
SP8010E ver 1.2 www.samhop.com.tw mar,24,2014 4 drain power dissipation p d (w) 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 drain-source voltage v ds (v) 100 10 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 1 v gs =0v 1 6 4.5 10 drain reverse current i dr (a) i dr v ds ambient temperature ta ( c ) p d ta gate threshold voltage vth (v) ambient temperature ta ( c ) -80 80 40 -40 0 2.5 2.0 1.5 1.0 0.5 0 120 160 vth ta v ds = v gs i d = 0.3ma drain-source voltage v ds (v) total gate charge qg (nc) 15 12 9 6 3 0 50 40 30 20 10 0 048 12 16 20 24 28 32 gate-source voltage v gs (v) dynamic input/output characteristics i d = 26a v dd =20v v dd =20v 10 5 10 5
SP8010E ver 1.2 www.samhop.com.tw mar,24,2014 5 safe operating area 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board single pulse pulse width tw (s) rth - tw transient thermal impedance rth ( c/w) 0.1 1 10 100 10 1 r ds ( on) l imit 0.1 v gs =10v single pulse t a =25 c dc t=1ms t=1 0 0us t =1 0 ms t = 1s drain current id (a) drain-source voltage v ds (v) 100
SP8010E www.samhop.com.tw mar,24,2014 6 package outline dimensions ver 1.2 tson 3.3 x 3.3 symbols millimeters a b c d d1 d2 d3 e e1 e2 min. nom. max. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e h l l1 m 2.39 2.49 0.65 bsc 0.30 0.39 0.30 0.40 0.13 10 o 2.59 0.50 0.50 12 o d d1 d3 e l1 m c a e1 e 0 d2 b l h e2 pin 1 0.15 0
ver 1.2 www.samhop.com.tw mar,24,2014 7 SP8010E tson 3.3 x 3.3 tape and reel data tson 3.3 x 3.3 tape tson 3.3 x 3.3 reel unit:mm package tson 3.3 x 3.3 h1 d d1 ee1e2 h pp1 p2 t 3.70 ? 1.50 ? 1.50 1.10 2 0.10 4.0 2 0.10 2.0 2 0.05 0.3 2 0.05 unit: @ tape size 12 @ reel size a b c d n w1 w2 330 2 ! 1.0 1.5 feeding direction 2 0.10 (min) +0.10 - 0.00 12.0 +0.30 - 0.10 1.75 2 0.10 5.50 2 0.05 3.70 2 0.10 k 8.0 2 0.10 a n w1 w2 d b c 13 " + 0.5 - 0.2 ? 13.0 + 0.5 - 0.2 20.2(ref.) 178 + 0.0 - 2.0 12.4 + 2.0 - 0.0 18.4(ref.) d1 p2 p1 e e1 e2 p d a a b b h1 t k h section a-a section b-b
top marking definition tson 3.3 x 3.3 8010e xxxxxx product no. wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. pin 1 SP8010E www.samhop.com.tw mar,24,2014 8 ver 1.2
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