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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK2291 description drain current i d = 45a@ t c =25 drain source voltage- : v dss = 60v(min) fast switching speed applications switching regulators dc-dc converter, motor control absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 60 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 45 a i d(puls) pulsed drain current 180 a p tot total dissipation@tc=25 50 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK2291 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 10ma 60 v v gs (th ) gate threshold voltage v ds = 10v; i d =1ma 1.0 2.0 v v sd diode forward on-voltage i s =22.5a ;v gs = 0 1.5 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 22.5a 0.018 0.02 i gss gate-body leakage current v gs = 20v;v ds = 0 10 a i dss zero gate voltage drain current v ds = 60v; v gs = 0 100 a ciss input capacitance v ds =10v; v gs =0v; f t =1mhz 3800 pf crss reverse transfer capacitance 700 coss output capacitance 1530 t on turn-on time v gs =10v;i d =22.5a; r l =1.33 240 490 ns t off turn-off time 985 2000 pdf pdffactory pro www.fineprint.cn |
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