inchange semiconductor isc product specification isc silicon npn power transistors BUT131/a description collector-emitter sustaining voltage- : v ceo(sus) = 450v(min)- BUT131 500v(min)- BUT131a high switching speed applications designed for use in converters, inverters, switching regulators, motor control systems etc. absolute maximum ratings(t a =25 ) symbol parameter value unit BUT131 850 v ces collector-emitter voltage v be = 0 BUT131a 1000 v BUT131 450 v ceo collector-emitter voltage BUT131a 500 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current-continuous 4 a i bm base current-peak 8 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.56 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors BUT131/a electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BUT131 450 v ceo(sus) collector-emitter sustaining voltage BUT131a i c = 0.1a ;i b = 0; l= 10mh b 500 v v ce(sat)-1 collector-emitter saturation voltage i c = 1.5a; i b = 0.2a 1.0 v v ce(sat)-2 collector-emitter saturation voltage i c = 3a; i b = 0.4a b 2.5 v v be(sat) base-emitter saturation voltage i c = 3a; i b = 0.4a b 1.5 v i cev collector cutoff current v ce =v cesmax ;v be =-1.5v v ce =v cesmax ;v be =-1.5v;t j =100 0.25 1.5 ma i ebo emitter cutoff current v eb = 6v; i c =0 1.0 ma h fe dc current gain i c = 5a ; v ce = 5v 5 c ob output capacitance i e = 0; v cb = 10v; f test = 1khz 200 pf switching times; resistive load t on turn-on time 0.35 s t stg storage time 1.2 s t f fall time i c = 3a; i b1 = 0.4a; i b2 = -0.8a 0.07 s isc website www.iscsemi.cn 2
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