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? 1 www.fairchildsemi.com ?2011 fairchild semiconductor corporation FGB40N60SM rev. c0 FGB40N60SM 600 v, 40 a field stop igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 80 a collector current @ t c = 100 o c 40 a i cm (1) pulsed collector current 120 a p d maximum power dissipation @ t c = 25 o c 349 w maximum power dissipation @ t c = 100 o c 174 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c eg collector (flange) to-263ab/d2-pak c g c e FGB40N60SM 600 v, 40 a field stop igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: vce(sat) = 1.9 v(typ.) @ ic = 40 a ? high input impedance ? fast switching: e off = 6.5 uj/a/a ? tighten parameter distribution ? rohs compliant ? ir reflow only applications ? welder ,, pfc general description u using novel field stop igbt technology, fairchild ? s new series of field stop 2 nd generation igbts offer the optimum performance for welder and pfc applications where low conduction and switching losses are essential. ?
2 www.fairchildsemi.com FGB40N60SM 600 v, 40 a field stop igbt thermal characteristics package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 0.43 o c / w r ja the rma l resistance, junction to ambient - 62.5 o c / w devi ce marking device package reel size tape width quantity FGB40N60SM FGB40N60SM to-263ab/d2-pak - - 50 symbo l p aramet er test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v ? bv c es ? t j temperature coefficient of breakdown voltage v g e = 0v, i c = 250 a - 0.6 - v / o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g -e leakage current v ge = v ges , v ce = 0v - - 400 n a on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v g e 3.5 4.5 6 .0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v - 1.9 2.3 v i c = 40a , v ge = 15v, t c = 175 o c - 2.1 - v dyn amic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mh z - 1880 - pf c oes output capacitance - 180 - pf c r es reverse transfer capacitance - 50 - pf sw i tching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15 v, inductive load, t c = 25 o c - 12 16 ns t r r ise time - 20 28 ns t d (off) turn-off delay time - 92 120 n s t f fall time - 13 17 ns e o n turn-on switching loss - 0.87 1. 30 mj e off turn-off switching loss - 0.26 0. 34 mj e ts total switching loss - 1.13 1. 64 mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15 v, inductive load, t c = 175 o c - 15 - ns t r ri se time - 22 - ns t d( off) turn-off delay time - 116 - ns t f f all time - 16 - ns e on t urn-on switching loss - 0.97 - m j e off turn-off switching loss - 0.60 - m j e ts total switching loss - 1.57 - m j ?2011 fairchild semiconductor corporation FGB40N60SM rev. c0
3 www.fairchildsemi.com FGB40N60SM 600 v, 40 a field stop igbt electrical characteristics of the igbt (continued) symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400v, i c = 40a, v ge = 15v - 119 180 nc q ge gate to emitter charge - 13 20 nc q gc gate to collector charge - 58 90 nc ?2011 fairchild semiconductor corporation FGB40N60SM rev. c0
4 www.fairchildsemi.com typical performance characteristics f igure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current leve l 0 2 4 6 0 20 40 60 80 100 120 v ge = 8v 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 0 20 40 60 80 100 120 v ge = 8v 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 12 0 30 60 90 120 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] ?2011 fairchild semiconductor corporation FGB40N60SM rev. c0 FGB40N60SM 600 v, 40 a field stop igbt
5 www.fairchildsemi.com typical performance characteristics f igure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics f i gure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resistance 4 8 12 16 20 0 4 8 12 16 20 80a i c = 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 40 80 120 0 3 6 9 12 15 400v common emitter t c = 25 o c 300v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 10 20 30 40 50 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 1 10 100 1000 0.01 0.1 1 10 100 300 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] ?2011 fairchild semiconductor corporation FGB40N60SM rev. c0 FGB40N60SM 600 v, 40 a field stop igbt
6 www.fairchildsemi.com FGB40N60SM 600 v, 40 a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 10 20 30 40 50 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 0.1 1 5 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 20 30 40 50 60 70 80 0.1 1 6 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 1 10 100 1000 1 10 100 200 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] ?2011 fairchild semiconductor corporation FGB40N60SM rev. c0
7 www.fairchildsemi.com FGB40N60SM 600 v, 40 a field stop igbt typical performance characteristics figure 19. current derating figure 20. load current vs. frequency figure 21.transient thermal impedance of igbt 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 common emitter v ge = 15v collector current, i c [a] collector-emittercase temperature, t c [ o c] 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 110 120 tc = 75 o c square wave t j < 175 o c, d = 0.5, v ce = 400 v v ge = 15/0 v, r g = 6 ? collector current, i c [a] switching frequency, f [hz] tc = 100 o c 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 ?2011 fairchild semiconductor corporation FGB40N60SM rev. c0
8 www.fairchildsemi.com mechanical dimensions dimensions in millimeters d 2 pak
?2011 fairchild semiconductor corporation FGB40N60SM rev. c0
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ?

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