technical data 2011, february, rev. 01 audio frequency power amplifier features low speed switching npn epitaxial silicon transistor absolute maximum ratings tc=25c unless otherwise noted symbol parameter value units vcbo collector - base voltage 40 v vceo col lector - emitter voltage 30 v vebo emitter - base voltage 5 v ic collector current (dc) 3 a icp *collector current (pulse) 7 a ib base current (dc) 0.6 a pc collector dissipation (tc=25c) 10 w rja junction to ambient 132 c /w rjc junction to case 13.5 c/w tj junction temperature 150 c tstg storage temperature - 55 ~ 150 c * pw10ms, duty cycle50% electrical characteristics tc=25c unless otherwise noted characteristics symbol unit measurement mode mi n max dc current gain (1), (2) h fe v ce =2v, i c =20ma 30 dc current gain (1), (2) h fe v ce = 2v, i c = 1a 60 400 collector cut - off current i cbo a v cb = 30v, i e = 0 1.0 collector cut - off current i cbo a v cb = 40v, i e = 0 100 emitter cut - off curren t i ebo a v eb = 3v, i c = 0 1.0 emitter cut - off current i ebo a v eb = 5v, i c = 0 100 collector - emitter saturation voltage (1) v ce (sat) v ic = 2a, ib = 0.2a 0.5 ic = 0.8 a, ib = 0.02 a 0.1 base - emitter saturation voltage (1) v be (sat) v ic = 2a, ib = 0.2a 2.0 (1) pulse test : pulse width 300 ? . duty cycle 2% (2) measurement mode for a network with common base : vcb = 1v, ie=ic * stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. exposure to absolute - maximum - rated conditions for extended periods may affect device reli ability. sl100 2 sot - 223 SL1002 emitter 1 2 3 collector base
sl100 2 2011, february, rev. 01
sl100 2 2011, february, rev. 01
sl100 2 2011, february, rev. 01 sot - 223
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