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reverse blocking thyristors designed for overvoltage protection in crowbar circuits. ? glass-passivated junctions for greater parameter stability and reliability ? center-gate geometry for uniform current spreading enabling high discharge current ? small rugged, thermowatt package constructed for low thermal resistance and maximum power dissipation and durability ? high capacitor discharge current, 750 amps ? device marking: logo, device type, e.g., mcr692, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to +125 c, gate open) mcr692 mcr693 v drm, v rrm 50 100 volts peak discharge current (2) i tm 750 amps on-state rms current (180 conduction angles; t c = 85 c) i t(rms) 25 amps average on-state current (180 conduction angles; t c = 85 c) i t(av) 16 amps peak non-repetitive surge current (1/2 cycle, sine wave, 60 hz, t j = 125 c) i tsm 300 amps circuit fusing considerations (t = 8.3 ms) i 2 t 375 a 2 s forward peak gate current (t 1.0 m s, t c = 85 c) i gm 2.0 amps forward peak gate power (t 1.0 m s, t c = 85 c) p gm 20 watts forward average gate power (t = 8.3 ms, t c = 85 c) p g(av) 0.5 watt operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c mounting torque e 8.0 in. lb. (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) ratings apply for t w = 1 ms. see figure 1 for i tm capability for various duration of an exponentially decaying current waveform, t w is defined as 5 time constants of an exponentially decaying current pulse. (3) test conditions: i g = 150 ma, v d = rated v drm , i tm = rated value, t j = 125 c. scrs 25 amperes rms 50 thru 100 volts device package shipping ordering information mcr692 to220ab 500/box www.kersemi.com k g a to220ab case 221a style 3 1 2 3 4 pin assignment 1 2 3 anode gate cathode 4 anode mcr693 to220ab 500/box
mcr692, mcr693 www.kersemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 1.5 c/w thermal resistance, junction to ambient r q ja 60 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm , i rrm e e e e 10 2.0 m a ma on characteristics peak forward on-state voltage (i tm = 50 a) (1) (i tm = 750 a, t w = 1 ms) (2) v tm e e e 6.0 1.8 e volts gate trigger current (continuous dc) (v d = 12 v, r l = 100 w ) i gt 2.0 7.0 30 ma gate trigger voltage (continuous dc) (v d = 12 v, r l = 100 w ) v gt e 0.65 1.5 volts gate nontrigger voltage (v d = 12 vdc, r l = 100 w , t j = 125 c) v gd 0.2 0.40 e volts holding current (v d = 12 v, initiating current = 200 ma, gate open) i h 3.0 15 50 ma latching current (v d = 12 vdc, i g = 150 ma) i l e e 60 ma gate controlled turn-on time (3) (v d = rated v drm , i g = 150 ma) (i tm = 50 a peak) t gt e 1.0 e m s dynamic characteristics critical rate-of-rise of off-state voltage (v d = rated v drm , gate open, exponential waveform, t j = 125 c) dv/dt 10 e e v/ m s critical rate-of-rise of on-state current i g = 150 ma t j = 125 c di/dt e e 100 a/ m s (1) pulse duration 300 m s, duty cycle 2%. (2) ratings apply for t w = 1 ms. see figure 1 for i tm capability for various durations of an exponentially decaying current waveform. t w is defined as 5 time constants of an exponentially decaying current pulse. (3) the gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
mcr692, mcr693 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) normalized peak current 0.8 25 0 0.2 0.4 0.6 1.0 50 75 100 125 t c , case temperature ( c) figure 1. peak capacitor discharge current figure 2. peak capacitor discharge current derating figure 3. current derating figure 4. maximum power dissipation i , peak discharge current (amps) tm 300 20 50 100 200 20 1000 0.5 50 t w , pulse current duration (ms) 2.0 1.0 t w t w = 5 time constants i tm 10 5.0 t , maximum allo w a b le c case temperature ( c ) 16 20 12 4.0 8.0 dc half wave 75 80 85 90 95 100 105 110 115 120 125 i t(av) , average on-state current (amps) p , average power dissipation (watts) (av) 16 12 8.0 4.0 0 24 16 8.0 32 0 20 half wave dc i t(av) , average on-state current (amps) t j = 125 c www.kersemi.com
mcr692, mcr693 4 2 k 10 k 5 k 3 k 10 t, time (ms) 1 k 500 300 200 100 50 30 0.2 20 1 0.7 0.5 0.1 0.2 0.02 5 23 1 0.5 0.3 0.1 0.3 0.07 0.05 0.03 0.01 z q jc(t) = r q jc ? r(t) r(t), transient thermal resistance (normalized) figure 5. thermal response normalized gate trigger current normalized gate trigger voltage normalized hold current 40 10 0.2 0.3 140 120 100 80 60 40 20 0 20 0.5 1.2 1.0 0.8 40 60 1.4 t j , junction temperature ( c) 40 020 60 0.5 3.0 5.0 140 80 100 120 2.0 1.0 20 60 t j , junction temperature ( c) v d = 12 volts r l = 100 w v d = 12 volts r l = 100 w 0.3 0.5 0.8 1.0 140 120 40 100 3.0 2.0 20 60 80 0 40 t j , junction temperature ( c) 20 60 v d = 12 volts i tm = 100 ma figure 6. gate trigger current figure 7. gate trigger voltage figure 8. holding current www.kersemi.com
mcr692, mcr693 5 package dimensions to220ab case 221a07 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 a k l v g d n z h q f b 123 4 t seating plane s r j u t c style 3: pin 1. cathode 2. anode 3. gate 4. anode www.kersemi.com
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