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FZ06NPA070FP preliminary datasheet flownpc 0 600v/75a & 70a ps* *ps: 70a parallel switch (60a pt and 99m ? ) neutral point clamped inverter reactive power capability sic buck diode low inductance layout solar inverter ups FZ06NPA070FP tj=25c, unless otherwise specified parameter symbol value unit buck igbt t h =80c 44 t c =80c 59 t h =80c 71 t c =80c 108 t sc t j 150c 5 s v cc v ge =15v 390 v buck diode t h =80c 27 t c =80c 37 t h =80c 50 t c =80c 75 t j =t j max t p limited by t j max 240 t j =t j max t j =25c t j =t j max 600 150 600 175 maximum junction temperature c a 20 w a collector-emitter break down voltage repetitive peak collector current dc collector current v ce i cpulse i c v w t j max repetitive peak forward current power dissipation per diode p tot features flow0 12mm housing target applications schematic types maximum ratings condition v c v v rrm maximum junction temperature power dissipation per igbt v ge t j max p tot short circuit ratings peak repetitive reverse voltage gate-emitter peak voltage dc forward current a t j =t j max t p limited by t j max a i f t c =100c 105 i frm copyright vincotech 1 revision: 5
FZ06NPA070FP preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition buck mosfet t h =80c 16 t c =80c 21 t h =80c 54 t c =80c 97 boost igbt t h =80c 57 t c =80c 75 t h =80c 85 t c =80c 129 t sc t j 150c 6 s v cc v ge =15v 360 v boost inverse diode t h =80c 2 t c =80c t h =80c 21 t c =80c boost diode t j =25c t h =80c 20 t c =80c 28 t h =80c 34 t c =80c 52 150 20 600 maximum junction temperature t j max 175 t c =25c v rrm dc forward current p tot power dissipation per diode t j =t j max maximum junction temperature v a v c w a t p limited by t j max repetitive peak collector current gate-emitter peak voltage v ce i cpuls short circuit ratings dc collector current power dissipation per igbt collector-emitter break down voltage t p limited by t j max w 600 t j =t j max a t j =t j max a v c v peak repetitive reverse voltage a t j =t j max w a w v c v a v rrm v ge i f t j =t j max t j max p tot power dissipation per diode p tot t j =t j max t j =t j max dc forward current i f repetitive peak forward current i frm t p limited by t j max t j =t j max i c pulsed drain current i dpulse p tot gate-source peak voltage vgs maximum junction temperature power dissipation t j max drain to source breakdown voltage v ds dc drain current i d peak repetitive reverse voltage c maximum junction temperature t j max 150 70 1200 tc=25c 93 150 600 225 20 copyright vincotech 2 revision: 5
FZ06NPA070FP preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm -40?+(tjmax - 25) c storage temperature t stg -40?+125 c clearance insulation voltage creepage distance t op operation temperature under switching condition copyright vincotech 3 revision: 5
FZ06NPA070FP preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 4.5 5.2 7 t j =125c t j =25c 1 2.32 2.9 t j =125c 2.09 t j =25c 250 t j =125c t j =25c 300 t j =125c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 0.99 k/w * see dinamic characteristic at buck mosfet ** additional value stands for built-in capacitor t j =25c 1 1.48 1.8 t j =125c 1.58 t j =25c 42 t j =125c 34 t j =25c 9 t j =125c 9 t j =25c 0.121 t j =125c 0.121 di ( rec ) max t j =25c 13108 /d t t j =125c 10427 t j =25c 0.011 t j =125c 0.012 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1.91 k/w t j =25c 109 t j =125c 219 t j =25c 2.1 3 3.6 t j =125c t j =25c 200 t j =125c t j =25c 60 t j =125c t j =25c 92 t j =125c 101 t j =25c 6 t j =125c 6 t j =25c 208 t j =125c 210 t j =25c 9 t j =125c 5 t j =25c 0.066 t j =125c 0.096 t j =25c 0.100 t j =125c 0.225 ** see schematic of the gate-complex at characteristic figures 10 tj=25c tj=25c nc v 40 0 350 v ds =v gs 350 18 0.001 350 600 24 40 25 0 15 20 15 thermal grease thickness 50um = 1 w/mk 15 0 q g c ies q rr t rr t d(on) r ds(on) vce=vge f=1mhz i ges q gate v (gs)th i gss t r t d(off) e on q gd rgoff=8 ? ** i dss e off c iss c oss q gs r thjh v ge(th) v ce(sat) i ces r gint t f erec c oss i rrm c rss v f collector-emitter saturation voltage value conditions characteristic values 200 v c mws a/ s m ? k/w 130 nc 1.29 14 20 80 ua ns mws na pf nf integrated gate resistor buck igbt * gate emitter threshold voltage collector-emitter cut-off current incl. diode gate-emitter leakage current 600 0 70 0.00025 rgon=8 ? ** 15 buck diode gate charge ** 0 turn-off energy loss per pulse rgon=8 ? 20 reverse recovered charge total gate charge turn off delay time rise time input capacitance ** output capacitance reverse recovery time gate threshold voltage peak reverse recovery current reverse transfer capacitance diode forward voltage turn-on energy loss per pulse fall time peak rate of fall of recovery current static drain to source on resistance buck mosfet reverse recovered energy zero gate voltage drain current gate to source leakage current turn on delay time input capacitance gate to drain charge gate to source charge output capacitance thermal resistance chip to heatsink per chip 40 4+4,7 ua ns a v ? v tj=25c 60 225+70 na none 400 pf tj=25c f=1mhz 0 100 2800 copyright vincotech 4 revision: 5
FZ06NPA070FP preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value conditions characteristic values t j =25c 5 5.8 6.5 t j =125c t j =25c 1 1.49 2.1 t j =125c 1.6 t j =25c 0.03 t j =125c t j =25c 650 t j =125c t j =25c 37 t j =125c 35 t j =25c 13 t j =125c 16 t j =25c 459 t j =125c 500 t j =25c 83 t j =125c 106 t j =25c 0.81 t j =125c 1.11 t j =25c 1.35 t j =125c 1.71 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1.11 k/w t j =25c 9.07 tj=125c 9.43 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 4.36 k/w t j =25c 1.5 2.44 3.5 t j =125c 2.01 t j =25c 100 t j =125c t j =25c 80 t j =125c 100 t j =25c 33 t j =125c 109 t j =25c 2.7 t j =125c 6 di ( rec ) max t j =25c 11226 /d t t j =125c 8793 t j =25c 0.61 t j =125c 1.52 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2.04 k/w r 25 tol. 13% tj=25c 19.1 22 24.9 k ? r 100 tol. 5% tj=100c 1411 1486 1560 ? * see details on thermistor charts on figure 2. c v v a ns a boost igbt gate emitter threshold voltage turn-off energy loss per pulse q gate e off turn-on energy loss per pulse gate charge input capacitance output capacitance c rss peak reverse recovery current reverse recovered charge turn-off delay time collector-emitter saturation voltage collector-emitter cut-off incl diode turn-on delay time rise time integrated gate resistor gate-emitter leakage current boost diode diode forward voltage v f boost inverse diode v ge(th) v ce(sat) t d(off) reverse transfer capacitance e on i ces fall time 0 15 c oss c ies 15 0 600 0 15 20 t f t r t d(on) r gint rgon=8 ? ns mws ? ma na v nc pf 137 tj=25c 4000 k a/ s mws 75 tj=25c power dissipation p mw 210 rated resistance* b-value b (25/100) tol. 3% i ges v ce =v ge v 40 none reverse recovery energy t rr q rr e rec reverse recovery time peak rate of fall of recovery current thermistor diode forward voltage reverse leakage current v f i r i rrm rgoff=8 ? f=1mhz 30 20 40 rgon=8 ? 350 1200 350 25 480 70 0.0012 tj=25c tj=25c 288 4620 470 copyright vincotech 5 revision: 5
FZ06NPA070FP preliminary datasheet figure 1 mosfet figure 2 mosfet typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 3 v to 19 v in steps of 2 v v ge from 3 v to 19 v in steps of 2 v figure 3 mosfet figure 4 fred typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v buck typical output characteristics 0 20 40 60 80 100 012345 v ce (v) i c (a) 0 5 10 15 20 25 30 01234567 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 10 20 30 40 50 00.511.522.533.5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 100 012345 v ce (v) i c (a) copyright vincotech 6 revision: 5
FZ06NPA070FP preliminary datasheet figure 5 mosfet figure 6 mosfet typical switching energy losses typical switching energy losses as a function of collector current as a function of igbt gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 40 a r goff = 8 ? figure 7 fred figure 8 fred typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 40 a buck e on high t e off high t e on low t e off low t 0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 0 1020304050607080 i c (a) e (mws) e off high t e on high t e on low t e off low t 0.000 0.050 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0 8 16 24 32 40 r g (w) e (mws) e rec high t e rec low t 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 1020304050607080 i c (a) e (mws) e rec high t e rec low t 0.000 0.005 0.010 0.015 0.020 0.025 0 5 10 15 20 25 30 35 r g (w) e (mws) copyright vincotech 7 revision: 5
FZ06NPA070FP preliminary datasheet figure 9 mosfet figure 10 mosfet typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 40 a r goff = 8 ? figure 11 fred figure 12 fred typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 40 a r gon = 8 ? v ge = 15 v buck t doff t f t don t r 0.00 0.01 0.10 1.00 0 1020304050607080 i c (a) t (ms) t rr high t t rr low t 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0 5 10 15 20 25 30 35 r gon (w) t rr (ms) t doff t f t don t r 0.00 0.01 0.10 1.00 0 5 10 15 20 25 30 35 r g (w) t (ms) t rr high t t rr low t 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0 1020304050607080 i c (a) t rr (ms) copyright vincotech 8 revision: 5
FZ06NPA070FP preliminary datasheet figure 13 fred figure 14 fred typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 40 a r gon = 8 ? v ge = 15 v figure 15 fred figure 16 fred typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 40 a r gon = 8 ? v ge = 15 v buck i rrm high t i rrm low t 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 r gon (w) i rrm (a) q rr high t q rr low t 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0 5 10 15 20 25 30 35 r gon ( ) q rr (mc) i rrm high t i rrm low t 0 5 10 15 20 25 30 35 40 45 0 1020304050607080 i c (a) i rrm (a) q rr high t q rr low t 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 1020304050607080 i c (a) q rr (mc) copyright vincotech 9 revision: 5
FZ06NPA070FP preliminary datasheet figure 17 fred figure 18 fred typical rate of fall of forward and reverse recovery current typical rate of fall of forward and reverse recovery current as a function of collector current as a function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 40 a r gon = 8 ? v ge = 15 v figure 19 igbt figure 20 fred igbt transient thermal impedance f red transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 0.99 k/w r thjh = 1.91 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0.06 9.7e+00 0.10 3.8e+00 0.18 9.9e-01 0.32 5.7e-01 0.56 1.6e-01 0.91 1.0e-01 0.14 2.4e-02 0.38 1.4e-02 0.05 1.6e-03 0.21 2.0e-03 buck t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt high t di rec /dt high t di 0 /dt low t di rec /dt low t 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 0 5 10 15 20 25 30 35 r gon (w) di rec / dt (a/ms) di 0 /dt high t di rec /dt high t di rec /dt low t di o /dt low t 0 2000 4000 6000 8000 10000 12000 14000 16000 0 1020304050607080 i c (a) di rec / dt (a/ms) copyright vincotech 10 revision: 5
FZ06NPA070FP preliminary datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 150 c t j = 150 c v ge = 15 v figure 23 fred figure 24 fred power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 c t j = 175 c buck 0 50 100 150 200 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 70 80 90 0 50 100 150 200 t h ( o c) i c (a) 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 11 revision: 5
FZ06NPA070FP preliminary datasheet figure 25 igbt figure 26 igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(q g ) at at d = single pulse i g(ref) =1ma, r l =15 ? th = 80 oc v ge = 15 v t j =t jmax oc figure 27 mosfet figure 28 mosfet mosfet transient thermal impedance gate voltage vs gate charge as a function of pulse width z thjh = f(t p ) v ge = f(q g ) at d = t p / t r thjh = 1.29 k/w at i c = 18 a mosfet thermal model values r (c/w) tau (s) 0.09 9.2e+00 0.27 1.3e+00 0.53 2.1e-01 0.27 4.0e-02 0.08 4.8e-03 0.05 4.7e-04 buck v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100us 1ms 10ms 100m dc 10 0 10 3 0 2 4 6 8 10 12 14 16 0 102030405060708090100 q g (nc) v ge (v) 120 v 480 v t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 5 10 15 0 50 100 150 200 250 300 q g (nc) v ge (v) 200 v 400 v 0 1 2 3 4 5 6 7 8 9 10 0 102030405060 q g (nc) v ge (v) 120 v 480 v copyright vincotech 12 revision: 5
FZ06NPA070FP preliminary datasheet figure 1 igbt figure 2 igbt typical output characteristics typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v v ge from 6 v to 16 v in steps of 1 v figure 3 igbt figure 4 fred typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v boost 0 10 20 30 40 50 60 70 80 90 100 0.0 1.0 2.0 3.0 v ce (v) i c (a) 0 5 10 15 20 25 30 35 40 45 02468101214 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 10 20 30 40 50 60 70 80 90 100 00.511.522.533.544.55 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 10 20 30 40 50 60 70 80 90 100 0.0 1.0 2.0 3.0 v ce (v) i c (a) copyright vincotech 13 revision: 5
FZ06NPA070FP preliminary datasheet figure 5 igbt figure 6 igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 40 a r goff = 8 ? figure 7 igbt figure 8 igbt typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 40 a boost e rec high t e rec low t 0 0.5 1 1.5 2 2.5 0 1020304050607080 i c (a) e (mws) e rec high t e rec low t 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 5 10 15 20 25 30 35 r g ( ) e (mws) e off high t e on high t e on low t e off low t 0 0.5 1 1.5 2 2.5 3 0 1020304050607080 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30 35 r g ( ) e (mws) copyright vincotech 14 revision: 5
FZ06NPA070FP preliminary datasheet figure 9 igbt figure 10 igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 40 a r goff = 8 ? figure 11 fred figure 12 fred typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 40 a r gon = 8 ? v ge = 15 v boost t doff t f t don t r 0.001 0.01 0.1 1 10 0 1020304050607080 i c (a) t ( s) t doff t f t don t r 0.001 0.01 0.1 1 10 0 5 10 15 20 25 30 35 r g ( ) t ( s) t rr high t t rr low t 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0.160 0.180 0 5 10 15 20 25 30 35 r gon (w) t rr (ms) t rr high t t rr low t 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0 1020304050607080 i c (a) t rr (ms) copyright vincotech 15 revision: 5
FZ06NPA070FP preliminary datasheet figure 13 fred figure 14 fred typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 40 a r gon = 8 ? v ge = 15 v figure 15 fred figure 16 fred typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 40 a r gon = 8 ? v ge = 15 v boost i rrm high t i rrm low t 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 r gon (w) i rrm (a) q rr high t q rr low t 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 r gon ( ) q rr (mc) i rrm high t i rrm low t 0 20 40 60 80 100 120 140 0 1020304050607080 i c (a) i rrm (a) q rr high t q rr low t 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 0 1020304050607080 i c (a) q rr (mc) copyright vincotech 16 revision: 5
FZ06NPA070FP preliminary datasheet figure 17 fred figure 18 fred typical rate of fall of forward and reverse recovery current typical rate of fall of forward and reverse recovery current as a function of collector current as a function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 40 a r gon = 8 ? v ge = 15 v figure 19 igbt figure 20 fred igbt transient thermal impedance f red transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = tp / t d = tp / t r thjh = 1.11 k/w r thjh = 2.04 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0.06 9.9e+00 0.04 9.8e+00 0.22 1.2e+00 0.21 1.0e+00 0.59 1.4e-01 1.12 1.5e-01 0.17 2.2e-02 0.42 3.7e-02 0.03 2.7e-03 0.17 4.4e-03 0.04 2.7e-04 0.08 6.1e-04 boost t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt high t di rec /dt high t di 0 /dt low t di rec /dt low t 0 2000 4000 6000 8000 10000 12000 14000 16000 0 5 10 15 20 25 30 35 r gon (w) di rec / dt (a/ms) di 0 /dt high t di rec /dt high t di rec /dt low t di o /dt low t 0 2000 4000 6000 8000 10000 12000 14000 0 1020304050607080 i c (a) di rec / dt (a/ms) copyright vincotech 17 revision: 5
FZ06NPA070FP preliminary datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 oc t j = 175 oc v ge = 15 v figure 23 fred figure 24 fred power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 150 oc t j = 150 oc boost 0 20 40 60 80 100 120 140 160 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 70 80 90 0 50 100 150 200 t h ( o c) i c (a) 0 10 20 30 40 50 60 70 80 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 25 30 35 40 0 50 100 150 200 th ( o c) i f (a) copyright vincotech 18 revision: 5
FZ06NPA070FP preliminary datasheet figure 25 boost inverse diode figure 26 boost inverse diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) at at t p = 250 s d = tp / t r thjh = 4.36 k/w figure 27 boost inverse diode figure 28 boost inverse diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 150 oc t j = 150 oc boost 0 5 10 15 20 25 30 0246810121416 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 0 50 100 150 200 th ( o c) p tot (w) 0 2 4 6 8 10 12 0 50 100 150 200 th ( o c) i f (a) copyright vincotech 19 revision: 5
FZ06NPA070FP preliminary datasheet figure 1 thermistor figure 2 thermistor typical ntc characteristic typical ntc resistance values as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 5000 10000 15000 20000 25 50 75 100 125 t (c) r/ ? [] ?= ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? 25 100 / 25 11 25 )( tt b ertr copyright vincotech 20 revision: 5
FZ06NPA070FP preliminary datasheet t j 125 c r g on igb t =8 ? r g on mosfe t =0 ? r goff igbt =8 ? r goff mosfet = 47 ? figure 1 output inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 700 v v c (100%) = 700 v i c (100%) = 40 a i c (100%) = 40 a t doff = 0.21 s t don = 0.10 s t eoff = 0.22 s t eon = 0.12 s figure 3 output inverter igbt figure 4 output inverter igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 700 v v c (100%) = 700 v i c (100%) = 40 a i c (100%) = 40 a t f = 0.01 s t r = 0.01 s switching definitions buck mosfet general conditions = i c 1% v ce 90% v ge 90% -40 -20 0 20 40 60 80 100 120 140 160 -0.1 0 0.1 0.2 0.3 0.4 time (us) % t doff t eoff v ce i c v ge i c10% v ge10% t don v ce 3% -20 0 20 40 60 80 100 120 140 160 180 200 3.9 4 4.1 4.2 4.3 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -40 -20 0 20 40 60 80 100 120 140 160 0.15 0.2 0.25 0.3 0.35 time (us) % v ce i c t f i c10% i c90% -20 0 20 40 60 80 100 120 140 160 180 4 4.05 4.1 4.15 4.2 time(us) % tr v ce i copyright vincotech 21 revision: 5
FZ06NPA070FP preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 28.08 kw p on (100%) = 28.08 kw e off (100%) = 0.23 mj e on (100%) = 0.10 mj t eoff = 0.22 s t eon = 0.12 s figure 7 output inverter igbt figure 8 output inverter fred turn-off switching waveforms & definition of t r r turn-on switching waveforms & definition of t qr r (t qrr = integrating time for q r r ) v d (100%) = 700 v i d (100%) = 40 a i d (100%) = 40 a q rr (100%) = 0.12 c i rrm (100%) = -34 a t qrr = 0.47 s t rr = 0.01 s switching definitions buck mosfet i c 1% v ge90% -100 -80 -60 -40 -20 0 20 40 60 80 100 120 -0.1 0 0.1 0.2 0.3 0.4 time (us) % p of f e off t eoff v ce3% v ge10% -20 20 60 100 140 180 3.9 3.95 4 4.05 4.1 4.15 4.2 time(us) % p on e on t eon i rrm 90% i rrm 100% t rr -160 -120 -80 -40 0 40 80 120 4 4.05 4.1 4.15 4.2 4.25 time(us) % i d v d fitted t qrr -100 -50 0 50 100 150 4 4.05 4.1 4.15 4.2 4.25 time(us) % i d q r r copyright vincotech 22 revision: 5
FZ06NPA070FP preliminary datasheet figure 9 output inverter fred turn-on switching waveforms & definition of t erec (t erec = integrating time for e rec ) p rec (100%) = 28.08 kw e rec (100%) = 0.01 mj t erec = 0.47 s figure 11 figure 12 buck stage switching measurement circuit boost stage switching measurement circuit cg is included in the module measurement circuits switching definitions buck mosfet -40 10 60 110 160 210 260 4 4.05 4.1 4.15 4.2 4.25 time(us) % p rec e rec t erec copyright vincotech 23 revision: 5
FZ06NPA070FP preliminary datasheet version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing 10-FZ06NPA070FP-p969f p969f p969f outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 24 revision: 5
FZ06NPA070FP preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. copyright vincotech 25 revision: 5

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