absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 10 i d @ v gs = 12v, t c = 100c continuous drain current 6.4 i dm pulsed drain current 40 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 58 mj i ar avalanche current 10 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt a 2.4 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0(typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHNJ57234SE power mosfet surface mount (smd-0.5) 2/9/00 www.irf.com 1 250v, n-channel ? technology smd-0.5 product summary part number radiation level r ds(on) i d IRHNJ57234SE 100k rads (si) 0.40 w 10a features: n single event effect (see) hardened n ultra low r ds(on) n low total gate charge n proton tolerant n simple drive requirements n ease of paralleling n hermetically sealed n surface mount n ceramic package n light weight for footnotes refer to the last page r r 5 pd - 93837
irhnj57234e pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 250 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.30 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.40 w v gs = 12v, i d = 6.4a resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 6.0 s ( )v ds > 15v, i ds = 6.4a ? i dss zero gate voltage drain current 10 v ds = 200v ,v gs =0v 25 v ds = 200v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 28 v gs =12v, i d = 10a q gs gate-to-source charge 7.4 nc v ds = 125v q gd gate-to-drain (miller) charge 12 t d (on) turn-on delay time 25 v dd = 125v, i d = 10a, t r rise time 100 r g = 7.5 w t d (off) turn-off delay time 35 t f fall time 30 l s + l d total inductance 4.0 c iss input capacitance 1016 v gs = 0v, v ds = 25v c oss output capacitance 157 pf f = 1.0mhz c rss reverse transfer capacitance 9.0 na w ? nh ns m a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 1.67 r thj-pcb junction-to-pc board 6.9 soldered to a 2 square copper-clad board c/w measured from the center of drain pad to center of source pad source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 10 i sm pulse source current (body diode) 40 v sd diode forward voltage 1.2 v t j = 25c, i s = 10a, v gs = 0v ? t rr reverse recovery time 300 ns t j = 25c, i f = 10a, di/dt 3 100a/ m s q rr reverse recovery charge 3.1 m cv dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page
www.irf.com 3 IRHNJ57234SE table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page parameter 100k rads (si) units test conditions ? min max bv dss drain-to-source breakdown voltage 250 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 10 a v ds = 200v, v gs =0v r ds(on) static drain-to-source ? on-state resistance (to-3) 0.404 w v gs = 12v, i d = 6.4a r ds(on) static drain-to-source ? v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 10a on-state resistance (smd-0.5) 0.40 w v gs = 12v, i d = 6.4a ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 250 250 250 250 250 i 59.8 341 32.5 250 250 250 250 240 au 82.3 350 28.4 250 250 225 175 50 0 50 100 150 200 250 300 0 -5 -10 -15 -20 vgs vds br i au
irhnj57234e pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 10a 0 .001 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain to source current (a) ds d 5.0v 0.01 0.001 i d drain-to-source current (a)
www.irf.com 5 IRHNJ57234SE fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 40 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 10a v = 50v ds v = 125v ds v = 200v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds, drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain current (a) 10ms tc = 25c tj = 150c single pulse operation in this area limited by r ds ( on )
irhnj57234e pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d
www.irf.com 7 IRHNJ57234SE q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v pre-irradiation . 25 50 75 100 125 150 0 20 40 60 80 100 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.5a 8.0a 10a
irhnj57234e pre-irradiation 8 www.irf.com ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 200 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 1.15 mh peak i l = 10a, v gs = 12v a i sd 10a, di/dt 394a/ m s, v dd 250v, t j 150c world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252 7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 2/2000 footnotes: case outline and dimensions smd-0.5 pad assignments
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