cystech electronics corp. spec. no. : c737i3 issued date : 2012.11.06 revised date : page no. : 1/8 MTN3023I3 cystek product specification n -channel logic level enha ncement mode power mosfet MTN3023I3 features ? low gate charge ? simple drive requirement ? pb-free lead plating package equivalent circuit outline MTN3023I3 to-251ab to-251s g gate d drain s source bv dss 30v i d 30a v gs =10v, i d =20a 14m r dson(typ) v gs =4.5v, i d =10a 21m g d s g d s absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ t c =25 c i d 30 continuous drain current @ t c =100c i d 18 pulsed drain current *1 i dm 100 a total power dissipation @t c =25 50 p d w total power dissipation @t a =25 1.14 operating junction and storage te mperature range tj, tstg -55~+150 c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1%
cystech electronics corp. spec. no. : c737i3 issued date : 2012.11.06 revised date : page no. : 2/8 MTN3023I3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 2.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 110 c/w electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0v, i d =250 a bv dss / tj - 0.02 - v/ reference to 25 , i d =1ma v gs(th) 1 1.5 2 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 a v ds =30v, v gs =0v, tj=25 i dss - - 25 a v ds =30v, v gs =0v, tj=70 - 14 20 i d =20a, v gs =10v *r ds(on) - 21 28 m i d =10a, v gs =4.5v *g fs - 13 - s v ds =5v, i d =15a dynamic ciss - 750 - coss - 61 - crss - 52 - pf v ds =25v, v gs =0, f=1mhz t d(on) - 10 - ns t r - 17 - ns t d(off) - 36 - ns t f - 18 - ns v ds =15v, i d =1a, v gs =10v, r g =6 ? , r d =15 ? qg - 22 - nc qgs - 4.2 - nc qgd - 3.1 - nc v ds =15v, i d =20a, v gs =10v, *pulse test : pulse width 300 s, duty cycle 2% source drain diode symbol min. typ. max. unit test conditions *v sd - - 1.3 v i s =15a,v gs =0v *t rr - 10 - ns q rr - 21 - nc i s =20a,v gs =0v, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTN3023I3b-0-ub-g to-251ab (rohs compliant and halogen-free package) 80 pcs / tube, 50 tubes / box MTN3023I3s-0-ub-g to-251s (rohs compliant and halogen-free package) 80 pcs / tube, 50 tubes / box
cystech electronics corp. spec. no. : c737i3 issued date : 2012.11.06 revised date : page no. : 3/8 MTN3023I3 cystek product specification typical characteristics typical output characteristics 0 10 20 30 40 50 024681 0 brekdown voltage vs ambient temperature 30 32 34 36 38 40 -75 -50 -25 0 25 50 75 100 125 150 175 junction temperature-tj(c) drain-source breakdown voltage bv dss (v) i d =250 a, v gs =0v drain-source voltage -vds(v) drain current - id(a) 10v 9v 8v 7v 6v 5v vgs=4v vgs=3v vgs=2v static drain-source on-state resistance vs drain current 10 100 1000 0.001 0.01 0.1 1 10 100 drain current-id(a) static drain-source on-state resistance- rds(on)(m) vgs = 3v vgs=2.5v vgs=10v vgs=4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 reverse drain current -idr(a) source-drain voltage-vsd(v) static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 0 tj=25c tj=150c vgs=0v drain-source on-state resistance vs junction tempearture 0 5 10 15 20 25 30 35 40 -60 -20 20 60 100 140 180 junction temperature-tj(c) static drain-source on-state resistance-rds(on)(m) vgs=4.5v, id=10a vgs=10v, id=20a gate-source voltage-vgs(v) static drain-source on-state resistance-rds(on)(m) id=20a id=10a
cystech electronics corp. spec. no. : c737i3 issued date : 2012.11.06 revised date : page no. : 4/8 MTN3023I3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 drain-source voltage -vds(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -60 -20 20 60 100 140 junction temperature-tj(c) threshold voltage-vgs(th)(v) id=250ua forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 drain current-id(a) forward transfer admittance-gfs(s) vds=10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 12 04812162024 total gate charge---qg(nc) gate-source voltage---vgs(v) vds=15v id=20a maximum safe operating area 0.01 0.1 1 10 100 1000 11 0 1 0 0 maximum drain current vs case temperature 0 5 10 15 20 25 30 35 25 50 75 100 125 150 175 case temperature---tc(c) maximum drain current---id(a) drain-source voltage -vds(v) drain current --- id(a) 10 s operation in this area is limited by rds(on) dc 10ms 100ms 1ms 100 s
cystech electronics corp. spec. no. : c737i3 issued date : 2012.11.06 revised date : page no. : 5/8 MTN3023I3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 70 024681012 gate-source voltage-vgs(v) drain current -id(a) vds=10v power derating curve 0 10 20 30 40 50 60 0 50 100 150 200 casetemperature---tc() power dissipation---pd(w) transient thermal response curves 0.01 0.1 1 10 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.z jc (t)=2.71 c/w max. 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t)
cystech electronics corp. spec. no. : c737i3 issued date : 2012.11.06 revised date : page no. : 6/8 MTN3023I3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. 6 minutes max. 8 minutes max. time 25 c to peak temperature note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c737i3 issued date : 2012.11.06 revised date : page no. : 7/8 MTN3023I3 cystek product specification to-251ab dimension inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.2500 0.2618 6.35 6.65 i 0.0866 0.0945 2.20 2.40 b 0.2047 0.2126 5.20 5.40 j 0.2126 0.2244 5.40 5.70 c 0.5709 0.5866 14.50 14.90 k 0.2992 0.3071 7.60 7.80 d 0.0276 0.0354 0.70 0.90 l 0.0453 0.0492 1.15 1.25 e 0.0199 0.0276 0.50 0.70 m 0.0169 0.0228 0.43 0.58 f 0.0886 0.0925 2.25 2.35 n 0.1181 ref 3.00 ref g 0.0886 0.0925 2.25 2.35 s 0.1969 ref 5.00 ref h 0.0169 0.0228 0.43 0.58 t 0.1496 ref 3.80 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. marking: style: pin 1.gate 2.drain 3.source 3-lead to-251ab plastic package cystek packa g e code: i3 3023 product name date code
cystech electronics corp. spec. no. : c737i3 issued date : 2012.11.06 revised date : page no. : 8/8 MTN3023I3 cystek product specification to-251s dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.2559 0.2638 6.50 6.70 j 0.2362 0.2441 6.00 6.20 b 0.2020 0.2126 5.13 5.46 k 0.1299 0.1457 3.30 3.70 c 0.4094 0.4331 10.40 11.00 l 0.0358 0.0437 0.91 1.11 e 0.0280 0.0319 0.71 0.81 m 0.0181 0.0220 0.46 0.56 f 0.0858 0.0941 2.18 2.39 s 0.1902 ref 4.83 ref g 0.0858 0.0941 2.18 2.39 t 0.2106 ref 5.35 ref h 0.0181 0.0220 0.46 0.56 u 0.0701 ref 1.78 ref i 0.0902 0.0937 2.29 2.38 v 0.0299 ref 0.76 ref notes: 1.controlling dimension: inch. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking : style : pin 1. gate 2. drain 3. source 3-lead to-251s plastic package cystek package code: i3 device name date code 3023
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