RU8590R n-channel advanced power mosfet symbol rating unit v dss 85 v gss 25 t j 175 c t stg -55 to 175 c i s t c =25c 90 a i dp t c =25c 360 a t c =25c 90 t c =100c 64 t c =25c 188 t c =100c 94 r jc 0.8 c/w r ja 62.5 c/w e as 306 mj ruichips semiconductor co., ltd rev. a? dec., 2013 1 www.ruichips.com maximum junction temperature storage temperature range thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed diode continuous forward current 300s pulse drain current tested continuous drain current(v gs =10v) maximum power dissipation mounted on large heat sink i d a p d w thermal resistance-junction to ambient parameter common ratings (t c =25c unless otherwise noted) ? 85v/90a, r ds (on) =5.8m(typ.)@v gs =10v ? ultra low on-resistance ? fast switching and fully avalanche rated ? 100% avalanche tested ? 175c operating temperature ? lead free and green devices available (rohs compliant) ? high speed power switching ? ups drain-source voltage v gate-source voltage pin description features applications absolute maximum ratings to220 n-channel mosfet g d s d s g
RU8590R min. typ. max. bv dss drain-source breakdown voltage 85 90 v 1 t j =125c 30 v gs(th) gate threshold voltage 2 3 4 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 5.8 8 m v sd diode forward voltage 1.2 v t rr reverse recovery time 29 ns q rr reverse recovery charge 45 nc r g gate resistance 1.3 c iss input capacitance 4350 c oss output capacitance 480 c rss reverse transfer capacitance 275 t d(on) turn-on delay time 25 t r turn-on rise time 49 t d(off) turn-off delay time 121 t f turn-off fall time 17 q g total gate charge 48 q gs gate-source charge 13 q gd gate-drain charge 16 notes: ruichips semiconductor co., ltd rev. a? dec., 2013 2 www.ruichips.com v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU8590R unit v gs =0v, i ds =250a i dss zero gate voltage drain current v ds =85v, v gs =0v a electrical characteristics (t c =25c unless otherwise noted) v dd =40v,i ds =45a, v gen =10v,r g =0.8 v ds =68v, v gs =10v, i ds =45a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. the package limitation current is 75a. limited by t jmax , i as =35a, v dd = 48v, r g = 50 , starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. gate charge characteristics nc ns i sd =45a, v gs =0v i sd =45a, dl sd /dt=100a/s v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =40v, frequency=1.0mhz pf dynamic characteristics v gs =25v, v ds =0v v gs =10v, i ds =45a diode characteristics
RU8590R device marking package packaging quantity reel size tape width RU8590R RU8590R to220 tube 50 - - ruichips semiconductor co., ltd rev. a? dec., 2013 3 www.ruichips.com ordering and marking information
RU8590R ruichips semiconductor co., ltd rev. a? dec., 2013 4 www.ruichips.com typical characteristics 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current v gs =10v limited by package 0 3 5 8 10 13 15 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current i ds =45a 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.1 1 10 100 1000 10000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.001 0.01 0.1 1 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 0.8 c/w
RU8590R ruichips semiconductor co., ltd rev. a? dec., 2013 5 www.ruichips.com typical characteristics 0 30 60 90 120 150 180 0 1 2 3 4 5 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 3v 4v 8,9,10v 5v 6v 0 3 5 8 10 13 15 18 20 0 30 60 90 120 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance v gs =10v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i d =45a t j =25 c rds(on)=5.8m 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =175 c 0 600 1200 1800 2400 3000 3600 4200 4800 5400 6000 1 10 100 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crs s frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge v ds =68v i ds =45a
RU8590R ruichips semiconductor co., ltd rev. a? dec., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU8590R ruichips semiconductor co., ltd rev. a? dec., 2013 7 www.ruichips.com package information to220 e e1 q d d1 l1 b2 l e e1 p e2 a a1 h1 a2 c dep 2 1 p 1 l 2 b 1 min nom max min nom max min nom max min nom max a 4.40 4.55 4.70 0.173 0.179 0.185 p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.20 1.30 1.40 0.047 0.051 0.055 e a2 2.23 2.38 2.53 0.088 0.094 0.100 e1 b 0.75 0.80 0.85 0.030 0.031 0.033 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.17 1.28 1.39 0.046 0.050 0.055 l 12.70 13.18 13.65 0.500 0.519 0.537 c 0.40 0.50 0.60 0.016 0.020 0.024 l1 * * 3.95 * * 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 0.098 ref d1 8.96 9.21 9.46 0.353 0.363 0.372 p 3.50 3.60 3.70 0.138 0.142 0.146 dep 0.05 0.13 0.20 0.002 0.005 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.66 9.97 10.28 0.380 0.393 0.405 1 5 7 9 5 7 9 e1 * 8.70 * * 0.343 * 2 1 3 5 1 3 5 e2 9.80 10.00 10.20 0.386 0.394 0.402 symbol mm inch symbol mm inch 0.10 bsc 2.54 bsc 5.08 bsc 0.20 bsc 2.50 ref
RU8590R ruichips semiconductor co., ltd rev. a? dec., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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