elektronische bauelemente sge2329s -1.5a, -100v, r ds(on) 650m ? p-channel enhancement mode power mosfet 23-sep-2014 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen free description the sge2329s uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. the through-hole version is available for low-profile applications and suite d for low voltage applications such as dc/dc converters. features high density cell design for ultra low on-resistanc e high power and current handling capability excellent cdv/dt effect decline 100% eas and 100% rg guaranteed green device available package code absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds -100 v gate-source voltage v gs 20 v t a =25c -1.5 a continuous drain current, v gs @10v 1 t a =70c i d -1.2 a pulsed drain current 2 i dm -5.5 a total power dissipation 3 t a =25c p d 2 w operating junction and storage temperature range t j , t stg -55 ~ +150 c thermal resistance ratings thermal resistance junction-ambient 1 max. r ja 62.5 c/w s 2329s = marking g d d to-220 a m p j k l l g f b n d e o c h millimeter millimeter ref. min. max. ref. min. max. a 14.22 16.51 j 0.7 1.78 b 9.65 10.67 k 0.38 1. 02 c 12.50 14.75 l 2.39 2.69 d 3.56 4.90 m 2.50 3.43 e 0.51 1.45 n 3.10 4.09 f 2.03 2.92 o 8.38 9.65 g 0.31 0.76 p 0.89 1.47 h 3.5 4.5 g 1 s 3 d 2 p-channel
elektronische bauelemente sge2329s -1.5a, -100v, r ds(on) 650m ? p-channel enhancement mode power mosfet 23-sep-2014 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage bv dss -100 - - v v gs =0, i d = -250ua gate threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250ua forward transconductance g fs - 3 - s v ds = -5v, i d = -1a gate-source leakage current i gss - - 100 na v gs = 20v t j =25 - - -1 a drain- source leakage current t j =55 i dss - - -5 a v ds = -80v, v gs =0 - - 650 v gs = -10v, i d = -1a static drain-source on-resistance r ds(on) - - 700 m v gs = -4.5v, i d = -0.5a total gate charge 2 q g - 9.3 - gate-source charge q gs - 1.75 - gate-drain (miller) change q gd - 1.25 - nc i d = -1a v ds = -50v v gs = -10v turn-on delay time 2 t d(on) - 2 - rise time t r - 18.4 - turn-off delay time t d(off) - 19.6 - fall time t f - 19.6 - ns v dd = -50v i d = -0.5a v gs = -10v r g =3.3 r l =30 input capacitance c iss - 513 - output capacitance c oss - 29 - reverse transfer capacitance c rss - 17 - pf v gs =0v v ds = -15v f=1.0mhz source-drain diode forward on voltage 2 v sd - - -1.2 v i s = -1a, v gs =0v, tj=25c continuous source current 1,4 i s - - -1.5 a pulsed source current 2,4 i sm - - -5 v v d = v g =0v, force current reverse recovery time t rr - 27 - ns reverse recovery charge q rr - 36 - nc i f = -1a, tj=25c di/dt=100a/ s notes: 1. the data tested by surface mounted on a inch 2 fr-4 board with 2oz copper. 2. the data tested by pulse width 300 Q us, duty cycle 2%. Q 3. the power dissipation is limited by 150c jun ction temperature. 4. the data is theoretically the same as id and idm, in real applications, should by limited by tot al power dissipation.
elektronische bauelemente sge2329s -1.5a, -100v, r ds(on) 650m ? p-channel enhancement mode power mosfet 23-sep-2014 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
elektronische bauelemente sge2329s -1.5a, -100v, r ds(on) 650m ? p-channel enhancement mode power mosfet 23-sep-2014 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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