62712 tkim/42209qa ms im tc-00001941 no. a1457-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 ATP301 p-channel power mosfet ? 100v, ? 28a, 75m , atpak stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. 1 : gate 2 : drain 3 : source 4 : drain atpak 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 features ? on-resistance r ds (on)=57m (typ.) ? input capacitance ciss=4000pf (typ.) ? 10v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --100 v gate-to-source voltage v gss 20 v drain current (dc) i d --28 a drain current (pulse) i dp pw 10 s, duty cycle 1% --112 a allowable power dissipation p d tc=25 c70w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 54 mj avalanche current *2 i av --28 a note : * 1 v dd =--30v, l=100 h, i av =--28a * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7057-001 ordering number : ena1457a ATP301-tl-h product & package information ? package : atpak ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl ATP301 lot no. 1 3 2,4
ATP301 no. a1457-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --100 v zero-gate voltage drain current i dss v ds = -- 100v, v gs =0v -- 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 1ma --2.0 --3.5 v forward transfer admittance | yfs | v ds = -- 10v, i d = --14 a 32 s static drain-to-source on-state resistance r ds (on) i d = -- 14a, v gs = -- 10v 57 75 m input capacitance ciss v ds =--20v, f=1mhz 4000 pf output capacitance coss 270 pf reverse transfer capacitance crss 150 pf turn-on delay time t d (on) see speci ed test circuit. 32 ns rise time t r 130 ns turn-off delay time t d (off) 330 ns fall time t f 190 ns total gate charge qg v ds =--60v, v gs =--10v, i d =--28a 73 nc gate-to-source charge qgs 16 nc gate-to-drain ?miller? charge qgd 14 nc diode forward voltage v sd i s =--28a, v gs =0v --1.0 --1.5 v switching time test circuit avalanche resistance test circuit ordering information device package shipping memo ATP301-tl-h atpak 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d = --14a r l =4.3 v dd = --60v v out v in 0v --10v v in ATP301 50 0v --10v 50 rg v dd l ATP301
ATP301 no. a1457-3/7 | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs (off) i s -- v sd sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a cutoff voltage, v gs (off) -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds it14595 it14592 --50 --25 150 0 --30 --10 --15 --20 --25 -- 5 1000 2 it14599 it14597 it14596 --0.1 --1.0 23 57 3 100 --1.2 --1.0 --0.6 --0.4 --0.8 --0.2 0 --0.001 --0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 --0.1 --1.0 --10 --100 7 5 7 2 3 10 1.0 7 5 5 2 10000 2 --10 357 5 23 --0.1 --1.0 23 57 2 --10 357 5 23 0 25 50 75 100 125 3 5 7 3 5 7 100 7 2 75 c 25 c tc= --25 c --25 c tc=75 c tc= --25 c 25 c 75 c v ds = --10v tc=75 c 25 c --25 c ciss crss it14598 10 100 2 3 5 7 1000 2 3 5 7 t d (off) v dd = --60v v gs = --10v f=1mhz t r --0.5 --1.0 --3.0 --2.0 --1.5 --3.5 --4.0 --5.0 --4.5 --2.5 0 0 --10 --60 --50 --40 --30 --20 0 --10 --60 --50 --40 --30 --20 it14594 --2 --4 --6 --8 --10 -- 3 -- 5 -- 7 -- 9 0 160 60 120 100 80 140 20 40 20 0 60 200 120 100 80 40 140 160 180 it14593 -- 2 -- 1 -- 4 -- 3 -- 6 -- 5 0 tc=25 c v gs = --4.0v v ds = --10v t f 25 c v gs = --10v, i d = --14a --8.0v coss t d (on) --4.5v --6.0v --10.0v single pulse i d = --14a --25 c 25 c tc=75 c single pulse v gs =0v single pulse
ATP301 no. a1457-4/7 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it14603 a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it14601 it14600 01020 50 40 70 60 30 80 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 v ds = --60v i d = --28a it14602 --0.01 --0.1 --1.0 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 2 3 7 --10 --0.1 i dp = --112a i d = --28a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). --1.0 23 57 --10 23 57 2 2 357 --100 10 s --100 0 0 20 40 60 80 100 140 120 60 50 30 20 40 10 80 70 160 tc=25 c single pulse pw 10 s
ATP301 no. a1457-5/7 taping speci cation ATP301-tl-h
ATP301 no. a1457-6/7 outline drawing land pattern example ATP301-tl-h mass (g) unit 0.266 * for reference mm unit: mm 6.5 6.7 1.6 2 2.3 2.3 1.5
ATP301 ps no. a1457-7/7 note on usage : since the ATP301 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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