l/ <^s.ml-conaactoi ^p 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 jl BFS23A vhf. power transistor n-p-n epitaxial planar transistor intended for use in class-a, b and c operated mobile, industrial and military transmitters with a supply voltage of 28 v. the transistor is resistance stabilized. every tran- sistor is tested under severe load mismatch conditions. it has a to-39 metal envelope with the collector connected to' the case. quick reference data r.f. performance up mode of operation c.w. totmb- vce v 28 25 c in f mhz 175 an unne pl w 4 jtraltzed c gp db >10 ommon-emi >65 tier class-b circu zj 2.3 + j1.6 it ms 8,9-j18,1 mechanical data fig.1 to-39/1; collector connected to case. dimensions in mm 0,86 max. 1.0 max -j 5,08 u- - 9,4 _? max 8,5 max max .12,7 mm . i j. \.l .semi-c (inductors reserves the right to change lest conditions, parameter limits :ind package dimensions \vitnoitl notice liifbrmulion ltini?h?d by nj semi-cunduclon n believed to he hulh ucuurnlc and reliable .u the lime of going to press. however si scnii-c oiiduclors .bsuuie* iin rc^punsibilily for uny crmrs or uiniisioim jisoivured in its u>e nj semi-i.niijtii.lits ikn huts f.) vciitv 'h.ti ilikttshi-r'ta irr>. tirrfnt hek^rv nlnciim iiriten
BFS23A a ratings limiting values in accordance with the absolute maximum system (iec 134) collector-base voltage (open emitter) pea colle emit coll* coll< tota f ; 10 (wl 7.5 5 2.s 0 0 k value :ctor-emitter voltage (open base) ter-base voltage (open collector) sctor current (average) jctor current (peak value) f > 1 mhz 1 power dissipation up to tl, = 25 c > 1mhz tzutn s 0 v -4- + hort tlm?^ deration s.wr.>3" ^ ^ v. ' ?4- ir s h> irmal o| s.w.r.< f \r j ., ^ s, it > \^ \n i i ^jt | f>w h v s^ * 50 100tmb(c) 15 ic (a) 0.5 o.i 0.3 0.2 o '1i vcbom max- 65 vceo max. 36 ic(av)' max. 0.5 icm max, 1.5 tzcoseo dc soar \ \mb=25c \ v v a a w ) 20 30 uo vce (v) storage temperature operating junction temperature thermal resistance from junction to mounting base from mounting base to heatsink with a boron nitride washer for electrical insulation tstg ~65 t +200 tt max. 200 rthj-mb = 22 k/w rth mb-h 2.5 k/w
v.h.f. power transistor characteristics tj = 25 c unless otherwise specified collector cut-off current ib = o; vce = 28 v breakdown voltages collector-base voltage open emitter, ic = 1 ma collector-emitter voltage open base, ic = 10 ma emitter-base voltage open collector; ie = 1 ma transient energy l = 25 mh; f = 50 hz open base d.c. current gain lc = 500 ma; vce = 5 v transition frequency ic = 400 ma; vce = 20 v collector capacitance at f = 1 mhz ie = ie = o: vcb = so v feedback capacitance at f = 1 mhz 1c = 25 ma; vce = 30 v jl BFS23A e e hfe 5 ma v'(br)cbo > 65 v v(br)ceo =* 36 v v(br)ebo > 4v > 0.5 ms > 0.5 ms -c 're typ. 500 mhz typ. 10 pf < 15 pf typ. 7.5 pf
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