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Datasheet File OCR Text: |
i nchange semiconductor isc product specific ation isc w ebsite is registered trademark isc silicon pnp power transistor 2 s a1930 description high transition frenquency : f t =200mhz(typ.) complementary to 2s c5171 applications power amplifier applications driver sta ge amplifier applications a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v oltage - 180 v v ceo collector - e mitter v oltage - 180 v v ebo emitter - b ase v oltage - 5 v i c collector c urrent - continuous - 2 a i b base c urrent - continuous - 1 a p c collector p ower d issipat i on @ t c =25 20 w t j junction temperature 150 t stg storage temperature range - 55~ 150
i nchange semiconductor isc product specification isc w ebsite is registered trademark 2 isc silicon pnp power transistor 2 s a1930 electrical characteristics t c =25 v ceo (sus) collector - e mitter sustaining v oltage i c = - 10m a; i b = 0 - 180 v v c e( sat ) collector - e mitter s aturation v oltage i c = - 1 .0 a; i b = - 0. 1 a - 1 .0 v v be( on ) base - emitter voltage i c = - 1 a ; v ce = - 5 v - 1.5 v i c bo collector c utoff c urrent v c b = - 180 v ; i e = 0 - 5 a i ebo emitter c utoff c urrent v eb = - 5 v ; i c = 0 - 5 a h fe - 1 dc c urrent g ain i c = - 0.1 a ; v ce = - 5 v 100 320 h fe - 2 dc c urrent g ain i c = - 1 a ; v ce = - 5 v 50 cob collector output capacitance i e = 0 ; v c b = - 10 v ,f=1mhz 16 pf f t current - gain bandwidth p roduct i c = - 0. 3 a ; v ce = - 5 v 200 mhz |
Price & Availability of 2SA1930
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