AON2409 30v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -8a r ds(on) (at v gs =-10v) < 32m w r ds(on) (at v gs =-4.5v) < 53m w symbol v ds the AON2409 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units -30v drain-source voltage -30 absolute maximum ratings t a =25c unless otherwise noted parameter g ds dfn 2x2b top view bottom view pin 1 d d g d d s d s pin 1 v gs i dm t j , t stg symbol t 10s steady-state a continuous drain current g i d t a =25c c thermal characteristics typ max maximum junction-to-ambient a c/w r q ja 37 66 c/w -8 gate-source voltage w t a =25c t a =70c 1.8 maximum junction-to-ambient a d 79 -55 to 150 units junction and storage temperature range 44 parameter v 2.8 t a =70c 20 power dissipation a -32 pulsed drain current c p d -6.3 rev 1 : nov 2011 www.aosmd.com page 1 of 5
AON2409 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.1 -1.75 -2.3 v i d(on) -32 a 26.5 32 t j =125c 33.6 41 42 53 m w g fs 20 s v sd -0.7 -1 v i s 3.5 a c iss 530 pf c oss 114 pf c rss 75 pf r g 11 22 w q g (10v) 12 14.5 nc q g (4.5v) 6 7.5 nc q gs 1.8 nc q gd 3 nc t d(on) 7.7 ns t 5.5 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss v ds =0v, v gs = 20v v gs =0v, v ds =-15v, f=1mhz switching parameters m w on state drain current maximum body-diode continuous current turn-on delaytime v =-10v, v =-15v, r =1.8 w , gate resistance total gate charge i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-8a input capacitance output capacitance zero gate voltage drain current gate-body leakage current v gs =-10v, v ds =-15v, i d =-8a gate source charge v ds =-5v, i d =-8a forward transconductance v gs =-4.5v, i d =-6a reverse transfer capacitance dynamic parameters diode forward voltage v gs =0v, v ds =0v, f=1mhz gate drain charge total gate charge m a v ds =v gs , i d =-250 m a i s =-1a,v gs =0v turn-on rise time t r 5.5 ns t d(off) 26.3 ns t f 11.5 ns t rr 12.2 ns q rr 25.4 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-8a, di/dt=500a/ m s v gs =-10v, v ds =-15v, r l =1.8 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =-8a, di/dt=500a/ m s turn-off delaytime turn-on rise time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 1 : nov 2011 www.aosmd.com page 2 of 5
AON2409 typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 20 30 40 50 60 70 0 5 10 15 20 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-6a v gs =-10v i d =-8a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.0v -3.5v -6v -10v -4.5v - 4v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 20 30 40 50 60 70 80 90 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-8a 25 c 125 c rev 1: nov 2011 www.aosmd.com page 3 of 5
AON2409 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-8a 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - ambient t a =25 c operating area (note f) figure 10: single pulse power rating junction - to - ambient (note h) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note h) d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse r q ja =79 c/w rev 1: nov 2011 www.aosmd.com page 4 of 5
AON2409 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 1: nov 2011 www.aosmd.com page 5 of 5
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