surface - mount photodiode assembly sd019 - 141 - 411 - ir920 www.advancedphotonix.com precision C control C results inf ormation in this technical data sheet is believed to be correct and reliable. however, no responsibility is assumed for possible inaccuracies or omission. specifications are subject to change without notice. p age 1 / 2 rev 03 - 24 - 15 ? 20 15 advanced photonix, inc. all rights reserved. advanced photonix inc. 1240 avenida acaso, camarillo ca 93012 ? phone (805) 987 - 0146 ? fax (805) 484 - 9935 description features the sd019 - 141 - 411 ir920 is a n ir e nhanced 0.18mm2 active are a silicon p hotodiode with an integrated bandpass filter, assembled in a 0805 smt package . ? improved sensitivity in nir area ? small footprint ? low capacitance ? high speed reliability applications this api high - reliability detector is in principle able to meet military test requirements (mil - std - 750, mil - std - 883) after p roper screening and group test. contact api for recommendations on specific test conditions and procedures. ? industrial sensors ? light management ? handheld devices absolute maximum ratings parameter min m ax units t a = 23c non condensing see recommended reflow profile reverse voltage - 50 v operating temperature - 40 +105 c storage temperature - 50 +125 c soldering temperature* - +260 c a d v anced ph o t onix, inc.
surface - mount photodiode assembly sd019 - 141 - 411 - ir920 www.advancedphotonix.com precision C control C results inf ormation in this technical data sheet is believed to be correct and reliable. however, no responsibility is assumed for possible inaccuracies or omission. specifications are subject to change without notice. p age 2 / 2 rev 03 - 24 - 15 ? 20 15 advanced photonix, inc. all rights reserved. advanced photonix inc. 1240 avenida acaso, camarillo ca 93012 ? phone (805) 987 - 0146 ? fax (805) 484 - 9935 opto - electrical parameters t a = 23 c unless noted otherwise characteristic test conditions min typ m ax units forward voltage i f =10 ma 0.5 0.8 1.3 v breakdown voltage i r = 100 ? a 50 - - v shunt resistance v bias = 10 mv - 2 - g ? dark current v r = 10 v - 20 500 pa junction capacitance v r = 5 v ; f = 1000 khz - 6.0 - pf rise time @ 920 nm v r = 3 v ; r i = 1000 ? - - 1.0 us responsivity ( - ir) v r = 0v; ? = 920 nm - 0. 5 - a/w typical performance spectral response a d v anced ph o t onix, inc.
|
