it - 815 to - 220 isolated triac ? 2014 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 1 revised 01/2014 maximum ratings symbol value unit repetitive peak off - state voltage (1)gate open, and tj=110c/vdrm 800 volt rms on - state current at tc = 80o c and conduction, angle of 360o it(rms) 15.0 amp peak surge (non - repetitive) on - state current, one - cycle, at 50hz or 60hz itsm 150 amp peak gate - trigger current for 3sec. max. igtm 4 amp peak gate - power dissipation at igt < igtm pgm 40 watt average gate - power dissipation pg(av) 0.8 watt storage temperature range tstg - 40 to +150 c operating temperature range, tj toper - 40 to +110 c peak off - state current (1) gate open tc = 110 c vdrm = max. rating idrm 0.5 ma max. maximum on - state voltage, (1) at tc = 25 c and it = rated amps vtm 2.2 volt max. dc holding current, (1) gate open and tc = 25 c iho 50 ma max. critical rate - of - rise of off - state voltage, (1) for vd =vdrm gate open, tc = 110 c critical dv/dt 150 v/sec. critical rate - of - rise of commutating voltage, (1) at tc = 80 c, gate enenergized, vd=vdrm it=it (rms) commutating dv/dt 4 v/sec. dc gate - trigger current for vd = 12vdc. rl = 60 ohm and at tc = 25 c (t2 + gate + t2 - gate - ) quads i & iii (t2 + gate - t2 - gate +) quads ii & iv igt 50 i, iii 80 ii, iv ma max. dc gate - trigger voltage for vd = 12vdc. rl = 60 ohm and at tc = 25 c vgt 2.5 volt max. gate controlled turn - on time for vd = vdrm igt = 80ma tr = 0.1 sec. it = 10a (peak) and tc = 25 c tgt 2.5 sec. thermal resistance, junction - to - case r 0 j - c 2.5 c/watt typ.
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