p p j d 1 4 p 06 - au august 3,2015 - rev.00 page 1 6 0 v p - c hannel enhancement mode mosfet v oltage - 6 0 v c urrent - 1 4 a to - 252 f eatures ? r ds(on) , v gs @ - 10v,i d @ - 7 a < 11 5 m ? r ds(on) , v gs @ - 4.5 v,i d @ - 3.5 a< 16 0m ? high switching speed ? imp roved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? acqire quality system certificate : ts16949 ? aec - q101 qualified ? lead free in compliance with eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case: to - 252 package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.0104 ounces, 0.297 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol limit units drain - source voltage v ds - 6 0 v gate - source voltage v gs + 2 0 v continuous drain current (note 1 ) i d - 1 4 a pulsed drain current i dm - 32 a single pulse avalanche energy (note 2 ) e as 42 mj power dissipation t c =25 o c p d 45 w derate above 25 o c 0. 3 w/ o c ope rating junction and storage temperature range t j ,t stg - 55~1 75 o c typical thermal resistance - junction to case - j unction to ambient (note 1 ) r jc ja 3.33 62.5 o c /w ? limited only by maximum junction temperature
p p j d 1 4 p 06 - au august 3,2015 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d = - 250 ua - 6 0 - - v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250ua - 2 .2 - 2. 7 6 - 3.2 v drain - source on - state resistance r ds(on) v gs = - 10v,i d = - 7 a - 96 11 5 m gs = - 4.5 v,i d = - 3.5 a - 12 5 1 6 0 zero gate voltage drain current i dss v ds = - 55 v,v gs =0v - - 0.01 - 1 .0 ua g ate - source leakage current i gss v gs = + 2 0 v,v ds =0v - + 1 0 + 100 na diode forward voltage v sd i s = - 1 a,v gs =0v - - 0. 7 8 - 1. 0 v dynamic (note 5 ) total gate charge q g v ds = - 3 0 v, i d = - 12 a, v gs = - 10 v (note 2 , 3 ) - 1 3.4 - nc gate - source charge q gs - 3. 4 - gate - drain c harge q gd - 3.0 - input capacitance ciss v ds = - 3 0 v, v gs =0v, f=1.0mhz - 685 - pf output capacitance coss - 63 - reverse transfer capacitance crss - 29 - turn - on delay time td (on) v d s = - 3 0 v, rl=2 .5 gs = - 10v , r g = 6.2 (note 2 , 3 ) - 7 - ns turn - on rise time t r - 40 - turn - off delay time td (off) - 2 3 - turn - off fall time t f - 1 0 - drain - source diode maximum continuous drain - source diode forward current i s --- - - - 1 0 a reverse recovery ti me trr v gs =0v, i s = - 1 2 a di f / dt= - 100a/us (note 2 ) - 2 8 - ns reverse recovery charge qrr - 4 2 - n c notes : 1. the test by surface mounted on 1 inch fr4 board with 2oz copper. 2. l= 0.1 mh, i as = - 29 a, v gs = - 1 0v , v d s = - 25 v, r g =25 ohm, starting t j =25 o c 3. the power diss ipation is limit by 150 junction temperature. 4. pulse width < 300us, duty cycle < 2% 5. guaranteed by design, not subject to product ion testing.
p p j d 1 4 p 06 - au august 3,2015 - rev.00 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drai n current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p j d 1 4 p 06 - au august 3,2015 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage variation vs. temperature fig. 9 threshold voltage variation with temperature . fig. 10 capacitance vs. drain - source voltage . fig. 11 maximum safe operating area
p p j d 1 4 p 06 - au august 3,2015 - rev.00 page 5 t ypical characteristic curves fig. 12 normalized thermal transient impedance
p p j d 1 4 p 06 - au august 3,2015 - rev.00 page 6 packaging information . to - 252 dimension u nit: mm
p p j d 1 4 p 06 - au august 3,2015 - rev.00 page 7 part no packing code version mounting pad layout part n o packing code package type packing type marking ver sion pjd14p06 - au _l2_000 a 1 to - 252 3,000pcs / 13
p p j d 1 4 p 06 - au august 3,2015 - rev.00 page 8 disclaimer
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