62012 tkim/5 1111pa tkim tc-00002592 no.8970-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 atp218 n-channel power mosfet 30v, 100a, 3.8m , single atpak stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance r ds (on)1=2.9m (typ.) ? input capacitance ciss=6600pf(typ.) ? 2.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 10 v drain current (dc) i d 100 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% 300 a allowable power dissipation p d tc=25 c60w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 235 mj avalanche current *2 i av 50 a note : * 1 v dd =15v, l=100 h, i av =50a * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7057-001 ordering number : en8970a product & package information ? package : atpak ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl atp218 lot no. 1 3 2,4 1 : gate 2 : drain 3 : source 4 : drain atpak 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 ATP218-TL-H
atp218 no.8970-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds = 30 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance | yfs | v ds =10v, i d = 50 a 260 s static drain-to-source on-state resistance r ds (on)1 i d = 50 a, v gs =4.5v 2.9 3.8 m r ds (on)2 i d = 25 a, v gs =2.5v 4.0 5.6 m input capacitance ciss v ds =10v, f=1mhz 6600 pf output capacitance coss 780 pf reverse transfer capacitance crss 600 pf turn-on delay time t d (on) see speci ed test circuit. 88 ns rise time t r 960 ns turn-off delay time t d (off) 340 ns fall time t f 320 ns total gate charge qg v ds =15v, v gs =4.5v, i d =100a 70 nc gate-to-source charge qgs 20 nc gate-to-drain ?miller? charge qgd 14 nc diode forward voltage v sd i s =100a, v gs =0v 0.91 1.2 v switching time test circuit ordering information device package shipping memo ATP218-TL-H atpak 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =50a r l =0.3 v dd =15v v out atp218 v in 4.5v 0v v in
atp218 no.8970-3/7 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a v ds =10v it16418 it16419 0 2.5 1.5 0 0 100 40 60 70 90 80 50 30 20 10 3.0 0.5 2.0 1.5 1.0 2.5 0 150 120 90 1.0 0.5 2.0 60 30 3.0v v gs =1.5v --25 c 25 c tc=75 c 8.0v tc=25 c 1.8v 6.0v 2.0v 2.5v 3.5v 4.5v r ds (on) -- v gs r ds (on) -- tc i s -- v sd sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a | y fs | -- i d forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds 030 10 15 20 25 5 it16425 it16424 it16423 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 7 5 3 2 it16422 25 c - -25 c f=1mhz coss crss tc=75 c 0.1 1.0 2 23 5 23 57 10 357 100 7 v gs =0v 1000 100 10000 1.0 3 2 5 7 3 2 5 7 3 2 5 7 10 3 2 5 7 0.1 1.0 23 57 7 23 5 1000 100 v dd =15v v gs =4.5v t d (off) t f t d (on) t r it16420 01 1.0 6.0 10 24 36 589 7 5.5 4.0 5.0 4.5 1.5 2.0 2.5 3.5 3.0 tc=25 c i d =25a 2 0.1 7 5 3 2 10 23 57 23 57 ciss tc= --25 c 75 c 25 c 1.0 7 5 3 2 10 7 5 3 2 100 1000 7 5 3 2 1.0 7 5 3 2 10 7 5 3 2 100 1000 7 5 3 7 5 3 2 100 10000 1000 100000 7 5 7 5 3 2 3 2 7 5 3 2 50a v ds =10v it16421 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 8 5 1 7 4 3 6 2 v gs =2.5v, i d =25a v gs =4.5v, i d =50a
atp218 no.8970-4/7 a s o drain-to-source voltage, v ds -- v drain current, i d -- a v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v it16427 0.1 1.0 2 3 5 7 2 3 5 7 2 3 5 5 3 2 7 7 10 0.1 i dp =300a (pw 10 s) i d =100a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 1.0 23 57 2 10 100 357 23 7 5 10 s 100 1000 it16426 0 0 1 2 3 4 70 10 20 30 40 60 50 5 v ds =15v i d =100a tc=25 c single pulse e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it16429 it16428 0 0 20 40 60 80 100 140 120 60 50 40 20 30 10 70 160
atp218 no.8970-5/7 taping speci cation ATP218-TL-H
atp218 no.8970-6/7 outline drawing land pattern example ATP218-TL-H mass (g) unit 0.266 * for reference mm unit: mm 6.5 6.7 1.6 2 2.3 2.3 1.5
atp218 ps no.8970-7/7 note on usage : since the atp218 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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