2013. 7. 12 1/6 semiconductor technical data KF6N70F n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellentavalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features h v dss =700v, i d =6a h drain-source on resistance : r ds(on) (max)=1.65 ? @v gs =10v h qg(typ.)= 19nc maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 700 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 6* a @t c =100 ? 4* pulsed (note1) i dp 15* single pulsed avalanche energy(note 2) e as 160 mj repetitive avalanche energy(note 1) e ar 4.2 mj peak diode recovery dv/dt(note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 41 w derate above 25 ? 0.33 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 3.05 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w g d s pin connection 1. gate2. drain 3. source to-220is (1) a a b b c c d d e e f f g g h h 1.47 max1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ *single gauge lead frame downloaded from: http:///
2013. 7. 12 2/6 KF6N70F revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 700 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.65 - v/ ? drain cut-off current i dss v ds =700v, v gs =0v - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =3a - 1.42 1.65 ? dynamic total gate charge q g v ds =560v, i d =6a v gs =10v (note4,5) - 19 - nc gate-source charge q gs - 4 - gate-drain charge q gd - 8 - turn-on delay time t d(on) v dd =350v i d =6a r g =25 ? (note4,5) - 34 - ns turn-on rise time t r - 32 - turn-off delay time t d(off) - 90 - turn-off fall time t f - 33 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz 785 - pf output capacitance c oss - 91 - reverse transfer capacitance c rss - 9.1 - source-drain diode ratings continuous source current i s v gs KF6N70F 1 marking downloaded from: http:///
2013. 7. 12 3/6 KF6N70F revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig 1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 10 2 68 41 0 02 fig 2. i d - v gs fig 3. bv dss - t j fig 4. r ds(on) - i d 02 5 0.8 0.9 1.31.2 1.1 1.0 50 75 125 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ) fig 5. i s - v sd 0 1.0 1.5 0.5 2.0 reverse drain current i s (a) 3.02.0 1.5 1.0 2.5 04 21 0 68 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig 6. r ds(on) - t j junction temperature t j ( ) 50 75 02 5 1 0 01 2 51 5 0 normalized on resistance 0.5 1.51.0 4.03.5 2.0 2.5 3.0 c v gs =10v i ds = 3 a v gs = 0v i ds = 250 100 c 25 c 11 0 0 0.1 10 0.1 1 10 100 v gs =7v,10v v gs =7v,10v v gs =5v v ds =30v v gs =5v 25 c 100 c downloaded from: http:///
2013. 7. 12 4/6 KF6N70F revision no : 0 gate - charge q g (nc) 0 1210 62 4 8 18 24 21 61 2 91 5 3 0 fig 8. q g - v gs gate - source voltage v gs (v) 10 0 10 1 10 2 10 3 10 4 i d =6a v ds = 560v fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 0 1 02 03 04 0 c rss c oss c iss fig 9. safe operation area drain current i d (a) drain - source voltage v ds (v) 10 1 10 2 10 1 10 -1 10 0 10 0 10 -2 10 2 10 3 t c = 25 t j = 150 single pulse c c time ( sec ) fig 10. transient thermal response curve transient thermal resistance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 du ty=0 .5 sing le pulse 0.05 0.02 0.2 0.01 0 .1 t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) =3.05 c/w max. operation in this area is limited by r ds(on) 10 s 1ms 100 s 10ms dc downloaded from: http:///
2013. 7. 12 5/6 KF6N70F revision no : 0 fig 11. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 r l q g q gd q gs q t p fig 13. resistive load switching fig 12. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 12 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss downloaded from: http:///
2013. 7. 12 6/6 KF6N70F revision no : 0 fig 14. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss downloaded from: http:///
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