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inchange semiconductor product specification silicon npn power transistors 2SC4581 description with to-3pml package high voltage,high speed switching power transistor pinning pin description 1 base 2 collector 3 emitter absolute maximum (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 20 a i b base current 4 a i bm base current-peak 8 a p c collector power dissipation t c =25 65 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.92 /w fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC4581 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a; i b =1 a 1.0 v v besat base-emitter saturation voltage i c =5a; i b =1 a 1.5 v v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0 450 v i ebo emitter cut-off current at rated voltage 0.1 ma i cbo collector cut-off current i ceo collector cut-off current at rated voltage 0.1 ma h fe-1 dc current gain i c =5 a ; v ce =5v 10 h fe-2 dc current gain i c =1ma ; v ce =5v 5 f t transition frequency i c =1a ; v ce =10v 20 mhz switching times t on turn-on time 0.5 s t stg storage time 2.0 s t f fall time i c =5a;r l =30 i b1 =1a; i b2 =2a v bb2 =4v 0.2 s
inchange semiconductor product specification 3 silicon npn power transistors 2SC4581 package outline fig.2 outline dimensions

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