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hexfet power mosfet notes through are on page 8 features and benefits features benefits applications? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters pqfn 5x6 mm absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c(top) = 25c continuous drain current, v gs @ 10v i d @ t c(top) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(top) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 3.8 47 20 200 3.0 2013 5.8 3.7 -55 to + 150 3.6 0.07 8.3 low r dson lower conduction losses low thermal resistance to pcb ( 1.2c/w) enable better thermal dissipation 100% rg tested increased reliability low profile ( 0.9 mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability v ds 200 v r ds(on) max (@v gs = 10v) 99.9 m q g (typical) 20 nc r g (typical) 2.3 i d (@t c(bottom) = 25c) 20 a

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s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 200 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.21 CCC v/c r ds(on) static drain-to-source on-resistance CCC 80 99.9 m v gs(th) gate threshold voltage 3.0 CCC 5.0 v ? v gs(th) gate threshold voltage coefficient CCC -11 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 1.0 ma i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 16 CCC CCC s q g total gate charge CCC 20 30 q gs1 pre-vth gate-to-source charge CCC 5.4 CCC q gs2 post-vth gate-to-source charge CCC 1.3 CCC q gd gate-to-drain charge CCC 6.3 CCC q godr gate charge overdrive CCC 7.0 CCC see fig.17 & 18 q sw switch charge (q gs2 + q gd ) CCC 7.6 CCC q oss output charge CCC 9.4 CCC nc r g gate resistance CCC 2.3 CCC t d(on) turn-on delay time CCC 7.2 CCC t r rise time CCC 4.7 CCC t d(off) turn-off delay time CCC 14 CCC t f fall time CCC 3.4 CCC c iss input capacitance CCC 1380 CCC c oss output capacitance CCC 100 CCC c rss reverse transfer capacitance CCC 23 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 39 59 ns q rr reverse recovery charge CCC 355 530 nc t on forward turn-on time time is dominated by parasitic inductance v ds = 50v, i d = 5.8a v ds = 200v, v gs = 0v, t j = 125c i d = 5.8a v gs = 20v v gs = -20v v ds = 100v v ds = 200v, v gs = 0v nc v gs = 10v t j = 25c, i f = 5.8a, v dd = 100v mosfet symbol v ds = 16v, v gs = 0v v dd = 100v, v gs = 10v i d = 5.8a v gs = 0v v ds = 50v di/dt = 500a/ s t j = 25c, i s = 5.8a, v gs = 0v showing the integral reverse p-n junction diode. conditions see fig.15 max. 290 5.8 ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 5.8a CCC typ. CCC r g =1.8 pf v ds = v gs , i d = 100 a a 5.8 CCC CCC 47 CCC CCC na ns thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 1.2 r jc (top) junction-to-case CCC 15 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 downloaded from: http:///
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 60 s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.8a v gs = 10v 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1 02 03 0 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 5.8a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 6.0v vgs top 10v 8.0v 7.5v 7.0v 6.8v 6.5v 6.3v bottom 6.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 6.0v vgs top 10v 8.0v 7.5v 7.0v 6.8v 6.5v 6.3v bottom 6.0v downloaded from: http:///

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fig 11. maximum effective transient thermal impedance, junction-to-case (top) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (top) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , casetemperature (c) 0 2 4 6 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250 a i d = 100 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec downloaded from: http:///
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.98a 1.4a bottom 5.8a 4 8 12 16 20 v gs , gate-to-source voltage (v) 40 80 120 160 200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 5.8a downloaded from: http:///
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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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pqfn 5x6 outline "b" package details note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) for footprint and stencil design recommendations, please refer to application note an-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf downloaded from: http:///
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pqfn tape and reel qualification standards can be found at international rectifiers web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 17.3mh, r g = 25 , i as = 5.8a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel optio n (eol notice #259) ? updated package outline on page 7. ? updated data sheet based on corporate template. 5/13/2014 downloaded from: http:///

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