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| inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor KSD5010 description high breakdown voltage- : v cbo = 1500v (min) high switching speed high reliability built-in damper diode applications designed for color tv horiz ontal output applicaitions absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current- continuous 2.5 a i cp collector current-peak 10 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor KSD5010 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter satu ration voltage i c = 2a; i b = 0.6a 8.0 v v be (sat) base-emitter satura tion voltage i c = 2a; i b = 0.6a 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 10 a i ebo emitter cutoff current v eb = 4v ; i c = 0 40 130 ma h fe dc current gain i c = 0.5a ; v ce = 5v 8 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 3 mhz v ecf c-e diode forward voltage i f = 2.5a 2.0 v t f fall time i c = 2a , i b1 = 0.6a ; i b2 = -1.2a r l = 100 ; v cc = 200v 0.4 s |
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