ioducti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 the rf line npn silicon push-pull rf power tvansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 mhz frequency range. ? specified 28 volt, 500 mhz characteristics ? output power = 100 w typical gain = 9.5 db (class ab); 8.5 db (class c) efficiency = 55% (typ) ? built-in input impedance matching networks for broadband operation ? push-pull configuration reduces even numbered harmonics ? gold metallization system for high reliability ? 100% tested for load mismatch MRF393 the MRF393 \s two transistors in a single package with separate base and collector leads and emitters common. this arrangement provides the designer with a space saving device capable of operation in a push-pull configuration. push-pull transistors 100 w, 30 to 500 mhz controlled "q" broadband push-pull rf power transistor npn silicon case744a-01 maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous total device dissipation @ tc = 25c (1) derate above 25c storage temperature range junction temperature symbol vceo vcbo vebo ic pd tstg tj value 30 60 4.0 16 270 1.54 -6510+150 200 unit vdc vdc vdc adc watts w/c c c thermal characteristics characteristic thermal resistance, junction to case symbol rsjc max 0.65 unit cm/ note: 1. this device is designed for rf operation. the total device dissipation rating applies only when the device is operated as an rf push-pull amplifier. ^_^ quality semi-conductors
electrical characteristics (tc = 25c unless otherwise noted.) characteristic symbol win typ max unit off characteristics (1) collector-emitter breakdown voltage (ic = 50 madc, ib = 0) collector-emitter breakdown voltage (ic = 50 madc, vbe ~ ) emitter-base breakdown voltage (l^ = 5.0 madc, ic = 0) collector cutoff current (vcb = 30 vdc, ie = 0) v(br)ceo v(br)ces v(br)ebo 'cbo 30 60 4.0 _ ? ? ? ? ? ? _ 5.0 vdc vdc vdc madc on characteristics (1) dc current gain (ic = 1 .0 adc, vce = 5.0 vdc) hfe 20 dynamic characteristics (1) output capacitance (vqb = 28 vdc, ie = 0, f = 1 .0 mhz) cob 40 ? 75 100 ? 95 pf functional tests (2) ? see figure 1 common-emitter amplifier power gain (vcc = 28 vdc, pout = 100 w, f = 500 mhz) collector efficiency (vcc = 28 vdc, pout = 100 w, f = 500 mhz) load mismatch (vcc = 28 vdc, pout = 100 w, f = 500 mhz, vswr = 30: 1 , all phase angles) gpe ri v 7.5 50 8.5 55 ? ? db % no degradation in output power notes: 1. each transistor chip measured separately. 2. both transistor chips operating in push-pull amplifier. h=h 14 c10 i c9i 1 i r; *-p? l. i l5 c13 1 ;c15 c16 28v c1.c2, c7, c8 ? 240 pf 100 mil chip cap c3 ? 15 pf 100 mil chip cap c4 ? 24 pf 100 mil chip cap c5 ? 33 pf 100 mil chip cap c6 ?12pf 100 mil chip cap c9, c13? 1000 pf 100 mil chip cap c10, c14 ? 680 pf feedthru cap c11, c15 ?0.1 |af ceramic disc cap c12, c16 ?50nf50v l1, l2 ? 0.15 nh molded choke with ferrite bead l3, l4 ? 2-1/2 turns #20 awg 0.200" id l5, l6 ? 3-1/2 turns #18 awg 0.200" id b1, b2 ? balun 50 2 semi rigid coax, 86 mil od, 4" long z1, z2 ? 850 mil long x 125 mil w. microstrip z3, z4 ? 200 mil long x 125 mil w. microstrip z5, z6 ? 800 mil long x 125 mil w. microstrip board material ? 0.0325" teflon-fiberglass, er = 2.56, 1 oz. copper clad both sides. figure 1. 500 mhz test fixture
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