cystech electronics corp. spec. no. : c390l3 issued date : 2010.10.05 revised date : 2012.08.20 page no. : 1/8 MTN3055L3 cystek product specification 30v n-channel enhancement mode mosfet MTN3055L3 bv dss 30v i d 8.3a r dson @v gs =10v, i d =4a 19m (typ) r dson @v gs =4.5v, i d =3a 25m (typ) features ? single drive requirement ? low on-resistance ? fast switching characteristic ? pb-free lead plating package symbol outline MTN3055L3 sot-223 g d s d g gate s source d drain absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current @v gs =10v, t a =25 c i d 8.3 a continuous drain current @v gs =10v, t a =70 c i d 6.6 a pulsed drain current *1 i dm 20 a t a =25 2.7 total power dissipation *2 p d w t a =100 1.1 operating junction and storage temp erature range tj, tstg -55~+150 c note : *1 . pulse width limited by safe operating area *2. surface mounted on a 1 in 2 pad of 2 oz. copper, t 10s.
cystech electronics corp. spec. no. : c390l3 issued date : 2010.10.05 revised date : 2012.08.20 page no. : 2/8 MTN3055L3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 18 c/w thermal resistance, junction-to-ambient, max r th,j-a 45 (note) c/w note : surface mounted on a 1 in 2 pad of 2 oz. copper, t 10s; 120 c/w when mounted on minimum copper pad. electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =250 a ? bv dss / ? tj - 0.02 - v/ c reference to 25c, i d =250 a v gs(th) 1.0 1.6 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs = 20v, v ds =0 i dss - - 1 v ds =30v, v gs =0 i dss - - 25 a v ds =24v, v gs =0 (tj=70 c) - 19 26 i d =4a, v gs =10v *r ds(on) - 25 40 m i d =3a, v gs =4.5v dynamic ciss - 745 - coss - 52 - crss - 58 - pf v ds =25v, v gs =0, f=1mhz *t d(on) - 4.5 - *t r - 14 - *t d(off) - 18 - *t f - 3.7 - ns v ds =15v, i d =1a, v gs =10v, r g =3.3 *qg - 7.4 - *qgs - 2.6 - *qgd - 2.8 - nc v ds =24v, i d =4a, v gs =5v source-drain diode *v sd - - 1.3 v v gs =0v, i s =2a *i s - - 4 *i sm - - 20 a v d =v gs =0v, v s =1.3v *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTN3055L3 sot-223 (pb-free lead plating package) 2500 pcs / tape & reel
cystech electronics corp. spec. no. : c390l3 issued date : 2010.10.05 revised date : 2012.08.20 page no. : 3/8 MTN3055L3 cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 12 14 16 18 20 012345678910 v ds , drain-source voltage(v) i d , drain current(a) 10v 9v 8v 7v 6v 5v 4.5v 4v v gs = 2. 5v v gs =3v v gs =3.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =3v v gs =2.5v v gs =10v v gs =4v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v, i d =3a v gs =10v, i d =4a v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =5a i d =4a
cystech electronics corp. spec. no. : c390l3 issued date : 2010.10.05 revised date : 2012.08.20 page no. : 4/8 MTN3055L3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =4a v ds =24v v ds =20v v ds =16v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 10 s t a =25c, tj=150c, v gs =10v, r ja =45c/w single pulse r ds( on) limited maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =45c/w
cystech electronics corp. spec. no. : c390l3 issued date : 2010.10.05 revised date : 2012.08.20 page no. : 5/8 MTN3055L3 cystek product specification typical characteristics(cont.) single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =45c/w transient thermal response curves 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =45c/w
cystech electronics corp. spec. no. : c390l3 issued date : 2010.10.05 revised date : 2012.08.20 page no. : 6/8 MTN3055L3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c390l3 issued date : 2010.10.05 revised date : 2012.08.20 page no. : 7/8 MTN3055L3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c390l3 issued date : 2010.10.05 revised date : 2012.08.20 page no. : 8/8 MTN3055L3 cystek product specification sot-223 dimension *: typical inches millimeters 321 f b a c d e g h a1 a2 i style: pin 1.gate 2.drain 3.source marking: 3-lead sot-223 plastic surface mounted package cystek package code: l3 device name date code inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1142 0.1220 2.90 3.10 g 0.0551 0.0709 1.40 1.80 b 0.2638 0.2874 6.70 7.30 h 0.0098 0.0138 0.25 0.35 c 0.1299 0.1457 3.30 3.70 i 0.0008 0.0039 0.02 0.10 d 0.0236 0.0315 0.60 0.80 a1 *13 o - *13 o - e *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o f 0.2480 0.2638 6.30 6.70 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
