all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 8 rev. 05.2, 2016-06-17 ptac210802fc thermally-enhanced high power rf ldmos fet 80 w, 28 v, 2110 C 2170 mhz description the ptac210802fc is an 80-watt ldmos fet with an asymmetrical design intended for use in multi-standard cellular power amplifer applications in the 2110 to 2170 mhz frequency band. features include dual-path design, input matching, high gain and thermally- enhanced package with earless fange. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptac210802fc package h-37248-4 features ? asymmetrical design - main : p1db = 19 w typ - peak : p1db = 60 w typ ? broadband internal matching ? wide video bandwidth ? typical cw pulsed performance, 2170 mhz, 28 v (doherty fxture) - output power @ p 3db = 75 w - effciency = 48% - gain @ p3db = 14 db ? capable of handling 10:1 vswr @28 v, 80 w (cw) output power ? integrated esd protection : human body model, class 1b (per jesd22-a114) ? low thermal resistance ? pb-free and rohs compliant rf characteristics two-carrier wcdma specifcations (tested in infneon doherty test fxture) v dd = 28 v, i dq = 85 ma, v gs1 = 1.3 v, p out = 5 w avg, ? 1 = 2165 mhz, ? 2 = 2175 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf, 10 mhz carrier spacing characteristic symbol min typ max unit linear gain g ps 15 17 db drain effciency h d 39 43 % adjacent channel power ratio acpr C31 C26 dbc 25 30 35 40 45 50 55 13 14 15 16 17 18 19 32 34 36 38 40 42 44 46 48 drain efficiency (%) gain (db) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 100 ma, v gs1 = 1.3 v, ? = 2170 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz, doherty fixture gain efficiency c210802fc - gc
data sheet 2 of 8 rev. 05.2, 2016-06-17 ptac210802fc dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a gate leakage current v gs = 10 v, i dq = 0 v i gss 1 v on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.6 w on-state resistance (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.19 w operating gate voltage (main) v ds = 28 v, i dq = 85 ma v gs 2.30 2.65 3.0 v operating gate voltage (peak) v ds = 28 v, i dq = 360 ma v gs 2.35 2.70 3.05 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (main, t case = 70c, 19 w cw) r qjc 2.5 c/w thermal resistance (peak, t case = 70c, 60 w cw) r qjc 0.8 c/w ordering information type and version order code package description shipping ptac210802fc v1 r0 ptac210802fc v1r0xtma1 h-37248-4, earless fange tape & reel, 50 pcs ptac210802fc v1 r250 ptac210802fc v1r250xtma1 h-37248-4, earless fange tape & reel, 250 pcs
ptac210802fc data sheet 3 of 8 rev. 05.2, 2016-06-17 typical performance (data taken in a production doherty test fxture) - 30 - 28 - 26 - 24 - 22 - 20 - 18 32 34 36 38 40 42 44 46 48 imd (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 100 ma, v gs1 = 1.3 v, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 2110 imdl 2110 imdu 2140 imdl 2140 imdu 2170 imdl 2170 imdu c210802fc - g1 25 30 35 40 45 50 55 - 40 - 35 - 30 - 25 - 20 - 15 - 10 32 34 36 38 40 42 44 46 48 drain efficiency (%) imd & acpr (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 100 ma, v gs1 = 1.3 v, ? = 2170 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz imd low imd up acpr efficiency c210802fc - g2 25 30 35 40 45 50 55 - 40 - 35 - 30 - 25 - 20 - 15 - 10 32 34 36 38 40 42 44 46 48 drain efficiency (%) acpu (dbc) output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 100 ma, v gs1 = 1.3 v, 3gpp wcdma signal, par = 10 db, bw 3.84 mhz acpu efficiency 2110 mhz 2140 mhz 2170 mhz c210802fc - g4 6 10 14 18 22 26 2 4 6 8 10 12 32 34 36 38 40 42 44 46 48 gain (db) opar (db) output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 100 ma, v gs1 = 1.3 v 3gpp wcdma signal, par = 10 db, bw 3.84 mhz opar gain c210802fc - g3 2110 mhz 2140 mhz 2170 mhz
data sheet 4 of 8 rev. 05.2, 2016-06-17 ptac210802fc typical performance (cont.) main side load pull performance C pulsed cw signal: 16 sec, 10% duty cycle; v dd = 28 v, 100 ma p 1db max output power max pae freq [mhz] zs [w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 2110 28.4 C j28.1 15.1 C j11.9 20.8 43.40 22 50 4.6 C j5.2 23.6 41.3 13 68.1 2140 32.4 C j27.7 7.7 C j10 22.0 43.50 22 61 4.15 C j6 23.9 41.3 13 71.9 2170 45.1 C j33.3 10.8 C j10.6 21.6 43.64 23 58 5.2 C j7.2 23.4 42.1 16 68.6 peak side load pull performance C pulsed cw signal: 16 sec, 10% duty cycle; v dd = 28 v, v gs1 = 1.41 v, doherty class c p 3db max output power max pae freq [mhz] zs [w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 2110 14.8 C j14.6 2.4 C j7.4 14.1 49.60 91 62.0 1.6 C j6.0 15.3 48.3 68 72.5 2140 20.6 C j13.6 2.7 C j7.8 14.0 49.50 89 58.8 1.8 C j6.5 15.2 48.7 74 68.5 2170 24.5 C j9.8 2.6 C j8.1 13.9 49.60 91 57.7 2.0 C j6.6 15.3 48.6 72 67.9 load pull performance 20 25 30 35 40 45 50 55 60 12 13 14 15 16 17 18 19 20 32 34 36 38 40 42 44 46 48 50 efficiency (%) gain (db) output power (dbm) power sweep, cw v dd = 28 v, i dq = 100 ma, v gs1 = 1.3 v 2110 mhz 2140 mhz 2170 mhz efficiency gain c210802fc - g6 - 60 - 50 - 40 - 30 - 20 - 10 0 0 10 20 30 40 50 60 2010 2050 2090 2130 2170 2210 2250 return loss (db) / imd (dbc) gain (db) / efficiency (%) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 100 ma, v gs1 = 1.3 v, p out = 9 w, 3gpp wcdma signal, par = 10 db, bw 3.84 mhz gain efficiency rl imd opar c210802fc - g5 z source z loa d s g1 g2 d1 d2
ptac210802fc data sheet 5 of 8 rev. 05.2, 2016-06-17 reference circuit reference circuit assembly diagram (not to scale)* c 2 1 0 8 0 2 f c _ c d _ 1 0 - 1 6 - 2 0 1 2 ptac210802 f _in _01 _d (62 ) ro4350, .030 c201 c205 c208 c210 c211 c 203 c207 c102 c110 r 102 c101 c 103 c105 c106 c109 r103 c 107 c108 r 101 r 104 c104 r105 r106 s1 ro4350, .030 (63 ) ptac 210802f out_01 _d c206 c 202 c209 v dd v dd v gspk v gs rf_in rf_out reference circuit assembly dut ptac210802fc test fixture part no. lta/ptac210802fc pcb rogers 4350, 0.762 mm [0.030] thick, 2 oz. copper, r = 3.66 find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower
data sheet 6 of 8 rev. 05.2, 2016-06-17 ptac210802fc h - 37248 - 4 __do _pd _10 - 10 - 2012 s d1 d2 g1 g2 main peak reference circuit (cont.) components information component description suggested supplier p/n input c101, c102, c103, c109 chip capacitor, 24 pf atc atc800a240jt250xb c104, c110 capacitor, 100 f digi-key pce4442tr-nd c105, c108 chip capacitor, 0.1 f digi-key 399-1267-2-nd c106, c107 capacitor, 10 f digi-key 587-1818-2-nd r101, r102, r104 resistor, 10 w digi-key p10gct-nd r103 resistor, 50 w anaren c16a50z4 r105, r106 resistor, 1000 w digi-key p1.0kect-nd s1 hybrid coupler anaren x3c21p1-03s output c201, c208, c210, c211 capacitor, 10 f digi-key 587-1818-2-nd c202, c209 capacitor, 220 f digi-key pce4444tr-nd c203, c204, c205, c206, chip capacitor, 24 pf atc atc800a240jt250xb c207 pinout diagram (top view) lead connections for ptac210802fc pin description d1 drain device 1 (peak) d2 drain device 2 (main) g1 gate device 1 (peak) g2 gate device 2 (main) s source (fange)
ptac210802fc data sheet 7 of 8 rev. 05.2, 2016-06-17 package outline specifcations package h-37248-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0381 [. 0015] - a -
|
