2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s a telephone : (973) 379-292 2 (212)227-600 5 fax : (973 ) 379496 0 2n372 1 silico n transisto r 2n372 1 i s a np n silico n transisto r intende d fo r genera l purpos e applications . th e plana r passivate d constructio n assure s excellen t devic e stabilit y an d life . thi s hig h performance , hig h valu e devic e i s mad e possibl e b y utilizin g advance d manufacturin g technique s an d epox y encapsulation . absolut e maximu m ratings : (25*^0 ) (unles s otherwis e specified ) volfages 1 8 5 collecto r t o emitte r emitte r t o bas e collecto r t o bas e curren t collecto r (stead y state ) dissipatio n tota l powe r (fre e ai r @ 25c ) tota l powe r (fre e ai r @ 55c ) temperatur e storag e operatin g vce o veb o cb o ic - p t . . p t . . 1 8 10 0 36 0 26 0 -55 to v v v m a m w m w not e 1 : lea d dimete r i t contro m i n tft e on e betwee n .07 0 w d ,25 0 tri m th e seit - mi plm . betwee n 25 0 m l en d o f tad 1 mu . o f .02 1 i s held . al l wmen . i n imchc s an d ar e referenc e unles s tolerance d ist g -33 1 0 +125 i> c f j + 125' c * determine d fro m powe r limitation s du e t o saturatio n voltag e a t thi s current . * * derat e 2.6 7 mw/ c increas e i n ambien t temperatur e abov e 25c . .00 0 'seatin g mi n plan e (note d electrica l characteristics : (25*^ ) (unles s otherwis e specified ) d c characteristic s collecto r cutof f current : (vc b = 18v ) i cb o (vc b = 18v , ta=100c ) i cb o emitte r cutof f current : (veb=5v ) i eb o smal l signa l characteristic s forwar d curren t transfe r ratio : (vce=10v , 1 c = 2 ma , f = i k hzf ) h f e inpu t impedance : (vce=10v,ic=2ma , f=l k hz ) h, b hig h frequenc y characteristic s collecto r capacitance : (vcb=10v , ie=o , f= l mhz ) c c b gai n bandwidt h product : (ic=4ma , vcb=5v ) f , t h2=hertz , equivalen t t o cycle s pe r second . min . typ . 6 0 4. 5 1 5 7 12 0 max . 0. 5 1 5 0. 5 66 0 1 0 unit s fjla jjla ohm s p f mh z n j semi-conductor s reserve s th e riah t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t police . informutio n lumishci l h y n j semi-conductor s i s helieve d t o h e hoi h accurat e mi d reliabl e a t th e tim e ul'guin g t o press . howeve r n j scnu- c onduttiks assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s us e n. i semi-coiiiluclor s encourage s c'lishnnt'r ^ h ) vi'n k lh:h ihir'ivh^^r i .jr ^ ,-nrrtmi r h**iafr ? nhii'iii u nnlr?r? : downloaded from: http:///
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