<~*.mi-(,onau.ctoi l/^roaueti, line. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n np n r f transisto r 2sc577 2 utd^ki r i iui n ? hig h gai n bandwidt h produc t f t = 9 gh z typ . ? hig h powe r gai n an d lo w nois e figur e ; p g = 13dbtyp , n f = 1. 1 d b typ . @ f = 90 0 mh z application s ? designe d fo r us e i n uh f ~ vh f wid e ban d amplifier . absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce o veb o i c p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r powe r dissipatio n @tc=25' c junctio n temperatur e storag e temperatur e rang e valu e 1 5 9 1. 5 7 5 0. 7 15 0 -55-15 0 uni t v v v m a w r ' c ^h^ . s ot - 2 3 - 3 l package ~~ * | r*~ a ?'ii i t , ?.. . markin g 2 c 2:emit t j i . . . . . l 4 k - ] ? m j __ l -" loll e |*d* | i g ?\ , 1 ^ r - 1 i_rr . r-, / , k j f h m l di m a 6 c d g h k l u m m wi n ma x 0,3 0 0.4 0 1.5 0 1.7 0 2 . 6 5 2.9 5 0 . 9 5 1.8 0 2.0 0 2 . 8 2 3 , 0 2 1.0 5 1. . 2 5 0.7 0 0.1 0 0.2 0 e r cro r v i 4 n j semi-conductor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o h e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n np n r f transisto r 2sc577 2 electrica l characteristic s t c =25' c unles s otherwis e specifie d symbo l v(br)cb o icb o ice o ieb o hf e f r co b cr e s 21 e i 2 p g n f paramete r collector-bas e breakdow n voltag e collecto r cutof f curren t collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n current-gai n bandwidt h produc t outpu t capacitanc e revers e transfe r capacitanc e insertio n powe r gai n powe r gai n nois e figur e condition s lc=10ua;l e = 0 v c b=12v;i e = 0 vce = 9v ; r be = ? v e b=15v;i c = 0 l c = 20m a ; v ce = 5 v l c = 20m a ; v ce = 5 v ;f = 1 gh z i e = 0 ; v cb = 5v;f = 1.0mh z l e =0;v c b=5v;f = 1.0mh z l c = 20m a ; v ce = 5v ; f = 1gh z lc = 20m a ; v cc = 5v;f = 900mh z lc = 5m a ; v cg = 5v;f = 900mh z mi n 1 5 8 0 6 9. 5 typ . 9 0. 9 0. 7 11. 8 1 3 1. 1 ma x 1 1 1 0 16 0 1. 5 1. 9 uni t v n a m a u a gh z p f p f d b d b d b collecto r powe r dissipatio n curv e ivjuv j 80 0 i- o .1-40 0 it! t o b s 1 20 0 a. 5 0 ( d ~ 0 wh s - s = m us i 25 m s \g al l nx 6 \u om m v \i ce r . t = c \c . 7 m r \c i 20 0 d c curren t transfe t rati o vs . collecto r curren t 10 0 o q 0 5 0 10 0 15 0 20 0 ambien t temperatur e t a ( : c ) v r p =5v - 3 v 2 5 1 0 2 0 5 0 10 0 collecto r curren t l c (ma ) downloaded from: http:///
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