, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n np n powe r transisto r telephone : (973 ) 376-292 2 (212)227-600 5 bdy4 7 descriptio n ? collector-emitte r breakdow n voltage - : v (br)c eo = 350v(min. ) ? d c curren t gain - : h fe =20(min.)@l c = 2 a ? collector-emitte r saturatio n voltage - : v ce(sat ) = 1.5v(max) @ l c = 15 a hig h switchin g spee d application s ? voltag e regulato r ? inverte r ? switchin g mod e powe r suppl y absolut e maximu m ratings(t a =25c ) symbo l vcb o vce s vce o veb o l c ic m i b p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k bas e curren t collecto r powe r dissipation@tc s s45 c junctio n temperatur e storag e temperatur e valu e 75 0 75 0 35 0 7 1 5 1 7 5 9 5 17 5 -65-17 5 uni t vv v v a aa w ? c ' c therma l characteristic s symbo l rt h j- c paramete r therma l resistance.junctio n t o cas e ma x 1.3 7 uni t "cm / 3 pi n i 1.bas e ? ) k 2 . bjtte r ^ s 3 . collec t o r (case ) 2 to- 3 packag e v- . f 1 1 1 _4u-d j x xd^ 4 ^trt i ^ "ys ^ ^ / i ( - r / - ? c - m^ ) m m d m u h ma x a 390 0 6 25.3 0 c 7.8 0 d 09 0 e 1.4 0 26.6 ? 8.3 0 1.1 0 tfi o 6 10.3 2 h 54 6 k i t 4 0 l_ l 167 5 n 19.4 0 q 4o o u 300 0 l v 4.3 0 13.5 0 iro s 195 2 45 0 302 0 45 0 f 13 0 - t ' f r 1 n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n np n powe r transisto r bdy4 7 electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l v(br)ce o v(br)cb o v(br)eb o vce(sat ) vee(sat ) icb o hpe- 1 hpe- 2 f l paramete r collector-emitte r breakdow n voltag e collector-bas e breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r saturatio n voltag e collecto r cutof f curren t d c curren t gai n d c curren t gai n curren t gain-bandwidt h produc t condition s lc = 200ma ; i b = 0 lc=1ma;l e = 0 i e = 2ma ; l c = 0 lc = 15a ; i b = 5 a lc = 15a ; i b = 5 a vcb = 750v ; i e = 0 v cb = 750v ; i e = 0 , t c =150' c lc = 2a ; v ce = 2 v lc=10a;v ce =2 v lc=0.5a ; v c e=10 v mi n 35 0 75 0 7 2 0 5 1 0 ma x 1. 5 2. 0 0.2 2. 5 uni t v vv vv m a mh z switchin g time s to n tf tof f turn-o n tim e fal l tim e turn-of f tim e lc=5a;l b i=-lb2=1 a 0. 5 1. 0 3. 5 i j s n s u s downloaded from: http:///
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